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SEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
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the substrate being a semiconductor, using technologies not covered by one of groups H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252 and H01L21/8254
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Semiconductor device having channel structure with 2D material
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11,942,536
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Mar 26, 2024
Tokyo Electron Limited
Robert D. Clark
H01 - BASIC ELECTRIC ELEMENTS
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Stacked thin film transistors
Patent number
11,462,568
Issue date
Oct 4, 2022
Intel Corporation
Aaron Lilak
H01 - BASIC ELECTRIC ELEMENTS
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Field-effect transistors having transition metal dichalcogenide cha...
Patent number
11,410,996
Issue date
Aug 9, 2022
Taiwan Semiconductor Manufacturing Company, Ltd.
Yee-Chia Yeo
H01 - BASIC ELECTRIC ELEMENTS
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Devices having a semiconductor material that is semimetal in bulk a...
Patent number
11,302,804
Issue date
Apr 12, 2022
Taiwan Semiconductor Manufacturing Company, Ltd.
Jean-Pierre Colinge
H01 - BASIC ELECTRIC ELEMENTS
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Field-effect transistors having transition metal dichalcogenide cha...
Patent number
11,164,864
Issue date
Nov 2, 2021
Taiwan Semiconductor Manufacturing Company, Ltd.
Yee-Chia Yeo
H01 - BASIC ELECTRIC ELEMENTS
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MIM capacitor and method of forming the same
Patent number
11,121,208
Issue date
Sep 14, 2021
Taiwan Semiconductor Manufacturing Company Ltd.
Hsing-Lien Lin
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TFT structure based on flexible multi-layer graphene quantum carbon...
Patent number
11,011,646
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May 18, 2021
Guang Dong Dongbond Technology Co., Ltd.
Ping Liu
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Devices having a semiconductor material that is semimetal in bulk a...
Patent number
10,818,780
Issue date
Oct 27, 2020
Taiwan Semiconductor Manufacturing Company, Ltd.
Jean-Pierre Colinge
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Method for making three dimensional complementary metal oxide semic...
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10,790,335
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Sep 29, 2020
Tsinghua University
Yu-Dan Zhao
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2-D material transistor with vertical structure
Patent number
10,644,168
Issue date
May 5, 2020
Taiwan Semiconductor Manufacturing Co., Ltd
Jean-Pierre Colinge
H01 - BASIC ELECTRIC ELEMENTS
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Dual channel FinFETs having uniform fin heights
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10,546,788
Issue date
Jan 28, 2020
International Business Machines Corporation
Zhenxing Bi
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Devices having a semiconductor material that is semimetal in bulk a...
Patent number
10,461,179
Issue date
Oct 29, 2019
Taiwan Semiconductor Manufacturing Company, Ltd.
Jean-Pierre Colinge
H01 - BASIC ELECTRIC ELEMENTS
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Dual channel FinFETs having uniform fin heights
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10,438,855
Issue date
Oct 8, 2019
International Business Machines Corporation
Zhenxing Bi
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Techniques for forming transistors on the same die with varied chan...
Patent number
10,418,464
Issue date
Sep 17, 2019
Intel Corporation
Glenn A. Glass
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Contact structure and extension formation for III-V nFET
Patent number
10,361,307
Issue date
Jul 23, 2019
International Business Machines Corporation
Veeraraghavan S. Basker
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Field-effect transistors having transition metal dichalcogenide cha...
Patent number
10,269,791
Issue date
Apr 23, 2019
Taiwan Semiconductor Manufacturing Company, Ltd.
Yee-Chia Yeo
H01 - BASIC ELECTRIC ELEMENTS
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MIM capacitor and method of forming the same
Patent number
10,164,003
Issue date
Dec 25, 2018
Taiwan Semiconductor Manufacturing Company Ltd.
Hsing-Lien Lin
H01 - BASIC ELECTRIC ELEMENTS
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2-D material transistor with vertical structure
Patent number
10,134,915
Issue date
Nov 20, 2018
Taiwan Semiconductor Manufacturing Co., Ltd.
Jean-Pierre Colinge
H01 - BASIC ELECTRIC ELEMENTS
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Complementary thin film transistor and manufacturing method thereof
Patent number
9,966,415
Issue date
May 8, 2018
Shenzhen China Star Optoelectronics Technology Co., Ltd.
Mian Zeng
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Devices having a semiconductor material that is semimetal in bulk a...
Patent number
9,929,257
Issue date
Mar 27, 2018
Taiwan Semiconductor Manufacturing Company, Ltd.
Jean-Pierre Colinge
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Contact structure and extension formation for III-V nFET
Patent number
9,917,177
Issue date
Mar 13, 2018
International Business Machines Corporation
Veeraraghavan S. Basker
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Stacked strained and strain-relaxed hexagonal nanowires
Patent number
9,859,367
Issue date
Jan 2, 2018
International Business Machines Corporation
Takashi Ando
H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor devices and methods of manufacturing the same
Patent number
9,825,033
Issue date
Nov 21, 2017
Samsung Electronics Co., Ltd.
Oh-Kyum Kwon
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Contact structure and extension formation for III-V nFET
Patent number
9,799,754
Issue date
Oct 24, 2017
International Business Machines Corporation
Veeraraghavan S. Basker
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Devices having transition metal dichalcogenide layers with differen...
Patent number
9,768,313
Issue date
Sep 19, 2017
Taiwan Semiconductor Manufacturing Company, Ltd.
Ling-Yen Yeh
H01 - BASIC ELECTRIC ELEMENTS
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Transition metal dichalcogenide semiconductor assemblies
Patent number
9,748,371
Issue date
Aug 29, 2017
Intel Corporation
Marko Radosavljevic
H01 - BASIC ELECTRIC ELEMENTS
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Germanium FinFETs with metal gates and stressors
Patent number
9,698,060
Issue date
Jul 4, 2017
Taiwan Semiconductor Manufacturing Company, Ltd.
Chih Chieh Yeh
H01 - BASIC ELECTRIC ELEMENTS
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Method of forming semiconductor device
Patent number
9,666,491
Issue date
May 30, 2017
United Microelectronics Corp.
Zhibiao Zhou
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Field effect transistor including strained germanium fins
Patent number
9,570,443
Issue date
Feb 14, 2017
International Business Machines Corporation
Karthik Balakrishnan
H01 - BASIC ELECTRIC ELEMENTS
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Two-dimensional large-area growth method for chalcogen compound, me...
Patent number
9,551,087
Issue date
Jan 24, 2017
University-Industry Cooperation Group of Kyung Hee University
Sun-Kook Kim
C01 - INORGANIC CHEMISTRY
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3D NANOSHEET STACK WITH DUAL SELECTIVE CHANNEL REMOVAL OF HIGH MOBI...
Publication number
20240120336
Publication date
Apr 11, 2024
TOKYO ELECTRON LIMITED
H. Jim FULFORD
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2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION
Publication number
20240055429
Publication date
Feb 15, 2024
QUALCOMM Incorporated
Xia Li
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CMOS Fabrication Methods for Back-Gate Transistor
Publication number
20230378334
Publication date
Nov 23, 2023
Taiwan Semiconductor Manufacturing Co., Ltd.
Chun-Chieh Lu
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2D GAS CHANNEL FOR VFETS
Publication number
20230261098
Publication date
Aug 17, 2023
TOKYO ELECTRON LIMITED
Robert D. Clark
H01 - BASIC ELECTRIC ELEMENTS
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3D SELECTIVE MATERIAL TRANSFORMATION TO INTEGRATE 2D MATERIAL ELEMENTS
Publication number
20230260999
Publication date
Aug 17, 2023
TOKYO ELECTRON LIMITED
Mark I. Gardner
H01 - BASIC ELECTRIC ELEMENTS
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THIN FILM TRANSISTORS HAVING A SPIN-ON 2D CHANNEL MATERIAL
Publication number
20230098467
Publication date
Mar 30, 2023
Intel Corporation
Carl H. NAYLOR
H01 - BASIC ELECTRIC ELEMENTS
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Field-Effect Transistors Having Transition Metal Dichalcogenide Cha...
Publication number
20220344330
Publication date
Oct 27, 2022
Taiwan Semiconductor Manufacturing Co., Ltd.
Yee-Chia Yeo
H01 - BASIC ELECTRIC ELEMENTS
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ELECTRONIC CIRCUITS AND CIRCUIT ELEMENTS
Publication number
20220293591
Publication date
Sep 15, 2022
PRAGMATIC PRINTING LTD.
Richard PRICE
H01 - BASIC ELECTRIC ELEMENTS
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Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
Publication number
20220238704
Publication date
Jul 28, 2022
Taiwan Semiconductor Manufacturing Co., Ltd.
Jean-Pierre Colinge
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
CMOS Fabrication Methods for Back-Gate Transistor
Publication number
20220231153
Publication date
Jul 21, 2022
Taiwan Semiconductor Manufacturing Co., Ltd.
Chun-Chieh Lu
H01 - BASIC ELECTRIC ELEMENTS
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TRANSISTORS WITH MONOCRYSTALLINE METAL CHALCOGENIDE CHANNEL MATERIALS
Publication number
20220199812
Publication date
Jun 23, 2022
Intel Corporation
Carl Naylor
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Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
Publication number
20210043756
Publication date
Feb 11, 2021
Taiwan Semiconductor Manufacturing Co., Ltd.
Jean-Pierre Colinge
H01 - BASIC ELECTRIC ELEMENTS
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Field-Effect Transistors Having Transition Metal Dichalcogenide Cha...
Publication number
20200006337
Publication date
Jan 2, 2020
Taiwan Semiconductor Manufacturing Company, Ltd.
Yee-Chia Yeo
H01 - BASIC ELECTRIC ELEMENTS
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Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
Publication number
20200006535
Publication date
Jan 2, 2020
Taiwan Semiconductor Manufacturing Company, Ltd.
Jean-Pierre Colinge
H01 - BASIC ELECTRIC ELEMENTS
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STACKED THIN FILM TRANSISTORS
Publication number
20190393249
Publication date
Dec 26, 2019
Intel Corporation
Aaron LILAK
H01 - BASIC ELECTRIC ELEMENTS
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TFT STRUCTURE BASED ON FLEXIBLE MULTI-LAYER GRAPHENE QUANTUM CARBON...
Publication number
20190157463
Publication date
May 23, 2019
Guang Dong Dongbond Technology Co., Ltd.
Ping LIU
H01 - BASIC ELECTRIC ELEMENTS
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MIM CAPACITOR AND METHOD OF FORMING THE SAME
Publication number
20190123133
Publication date
Apr 25, 2019
Taiwan Semiconductor Manufacturing company Ltd.
HSING-LIEN LIN
H01 - BASIC ELECTRIC ELEMENTS
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2-D Material Transistor with Vertical Structure
Publication number
20190103496
Publication date
Apr 4, 2019
Taiwan Semiconductor Manufacturing Co., Ltd.
Jean-Pierre COLINGE
H01 - BASIC ELECTRIC ELEMENTS
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Field-Effect Transistors Having Transition Metal Dichalcogenide Cha...
Publication number
20180350806
Publication date
Dec 6, 2018
Taiwan Semiconductor Manufacturing Company, Ltd.
Yee-Chia Yeo
H01 - BASIC ELECTRIC ELEMENTS
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Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
Publication number
20180190799
Publication date
Jul 5, 2018
Taiwan Semiconductor Manufacturing Company, Ltd.
Jean-Pierre Colinge
H01 - BASIC ELECTRIC ELEMENTS
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2-D MATERIAL TRANSISTOR WITH VERTICAL STRUCTURE
Publication number
20180175213
Publication date
Jun 21, 2018
Taiwan Semiconductor Manufacturing Co., Ltd.
Jean-Pierre COLINGE
H01 - BASIC ELECTRIC ELEMENTS
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CONTACT STRUCTURE AND EXTENSION FORMATION FOR III-V NFET
Publication number
20180166561
Publication date
Jun 14, 2018
International Business Machines Corporation
Veeraraghavan S. Basker
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Patent Application
TECHNIQUES FOR FORMING TRANSISTORS ON THE SAME DIE WITH VARIED CHAN...
Publication number
20180108750
Publication date
Apr 19, 2018
Intel Corporation
GLENN A. GLASS
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COMPLEMENTARY THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
Publication number
20180097035
Publication date
Apr 5, 2018
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
Mian ZENG
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CONTACT STRUCTURE AND EXTENSION FORMATION FOR III-V NFET
Publication number
20180061968
Publication date
Mar 1, 2018
International Business Machines Corporation
Veeraraghavan S. Basker
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DECOUPLING CAPACITOR ON STRAIN RELAXATION BUFFER LAYER
Publication number
20170213820
Publication date
Jul 27, 2017
International Business Machines Corporation
Karthik Balakrishnan
H01 - BASIC ELECTRIC ELEMENTS
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MIM CAPACITOR AND METHOD OF FORMING THE SAME
Publication number
20170207299
Publication date
Jul 20, 2017
Taiwan Semiconductor Manufacturing company Ltd.
HSING-LIEN LIN
H01 - BASIC ELECTRIC ELEMENTS
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Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
Publication number
20170125554
Publication date
May 4, 2017
Taiwan Semiconductor Manufacturing Company, Ltd.
Jean-Pierre Colinge
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
STACKED STRAINED AND STRAIN-RELAXED HEXAGONAL NANOWIRES
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20170117360
Publication date
Apr 27, 2017
International Business Machines Corporation
Takashi Ando
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Patent Application
DEVICES HAVING TRANSITION METAL DICHALCOGENIDE LAYERS WITH DIFFEREN...
Publication number
20170098717
Publication date
Apr 6, 2017
Taiwan Semiconductor Manufacturing Company, Ltd.
Ling-Yen Yeh
H01 - BASIC ELECTRIC ELEMENTS