the switching components having a common active material layer

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/2472the switching components having a common active material layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Resistive random access memory and manufacturing method thereoff
- Patent number 11,637,241
- Issue date Apr 25, 2023
- Winbond Electronics Corp.
- Meng-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 11,588,107
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device
- Patent number 11,575,084
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Seyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage device and storage unit with a chalcogen element
- Patent number 11,522,132
- Issue date Dec 6, 2022
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Kazuhiro Ohba
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 11,508,906
- Issue date Nov 22, 2022
- Kioxia Corporation
- Hiroyuki Ode
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device and method of fabricating the same
- Patent number 11,502,130
- Issue date Nov 15, 2022
- Samsung Electronics Co., Ltd.
- Kyusul Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a recurrent neural network computer
- Patent number 11,489,012
- Issue date Nov 1, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Elisa Vianello
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
RRAM process integration scheme and cell structure with reduced mas...
- Patent number 11,462,585
- Issue date Oct 4, 2022
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Hybrid memristor/field-effect transistor memory cell and its inform...
- Patent number 11,444,124
- Issue date Sep 13, 2022
- The Hong Kong University of Science and Technology
- Kwang Ting Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and methods of forming memory devices
- Patent number 11,444,125
- Issue date Sep 13, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Desmond Jia Jun Loy
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory elements having conductive islands embedded within...
- Patent number 11,398,525
- Issue date Jul 26, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of cross point memory cells
- Patent number 11,393,978
- Issue date Jul 19, 2022
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory architectures with multiple memory cells per acces...
- Patent number 11,349,072
- Issue date May 31, 2022
- OVONYX MEMORY TECHNOLOGY, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically rotatable antennas formed from an optically tunable ma...
- Patent number 11,322,684
- Issue date May 3, 2022
- International Business Machines Corporation
- Abram L. Falk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and related methods
- Patent number 11,316,107
- Issue date Apr 26, 2022
- Micron Technology, Inc.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded BEOL memory device with top electrode pillar
- Patent number 11,239,421
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM memory cell with multiple filaments
- Patent number 11,201,190
- Issue date Dec 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chin-Chieh Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide-based resistive non-volatile memory cell and method for manuf...
- Patent number 11,189,792
- Issue date Nov 30, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Laurent Grenouillet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of forming memory devices
- Patent number 11,081,523
- Issue date Aug 3, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Curtis Chun-I Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory elements with a multi-level cell configuration
- Patent number 11,069,743
- Issue date Jul 20, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Desmond Jia Jun Loy
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 11,063,217
- Issue date Jul 13, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device with meshed electrodes
- Patent number 11,063,089
- Issue date Jul 13, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-time programmable memory using gate-all-around structures
- Patent number 11,011,577
- Issue date May 18, 2021
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Device including element having rectification characteristics and t...
- Patent number 10,991,732
- Issue date Apr 27, 2021
- TIANMA JAPAN, LTD.
- Hiroyuki Sekine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device
- Patent number 10,949,132
- Issue date Mar 16, 2021
- Kioxia Corporation
- Reika Tanaka
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive memory device with meshed electrodes
- Patent number 10,950,662
- Issue date Mar 16, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fragmenting computer chips
- Patent number 10,943,875
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Cyril Cabral
- C06 - EXPLOSIVES MATCHES
Information Patent Grant
3D memory with confined cell
- Patent number 10,937,832
- Issue date Mar 2, 2021
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rectifying element and switching element having the rectifying element
- Patent number 10,923,534
- Issue date Feb 16, 2021
- NEC Corporation
- Naoki Banno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory
- Patent number 10,903,423
- Issue date Jan 26, 2021
- STMicroelectronics (Crolles 2) SAS
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL PHASE CHANGE MEMORY DEVICE
- Publication number 20240065119
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20240057487
- Publication date Feb 15, 2024
- UNITED MICROELECTRONICS CORP.
- Kai-Jiun Chang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY ELEMENT ARRAYS WITH SHARED ELECTRODE STRIPS
- Publication number 20240023345
- Publication date Jan 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh Gopinath
- G11 - INFORMATION STORAGE
Information Patent Application
NEURAL NETWORK SYSTEM, HIGH EFFICIENCY EMBEDDED-ARTIFICIAL SYNAPTIC...
- Publication number 20230292533
- Publication date Sep 14, 2023
- National Tsing Hua University
- Ya-Chin KING
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LATERAL MULTI-BIT MEMORY DEVICES AND METHODS OF MAKING THE SAME
- Publication number 20230255034
- Publication date Aug 10, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU LOW TEMPERATURE DIELECTRIC DEPOSITION AND SELECTIVE TRIM OF...
- Publication number 20230180487
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE
- Publication number 20230180641
- Publication date Jun 8, 2023
- Korea University Research and Business Foundation
- Zhe WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY DEVICE INCLUDING DUAL ACTIVE LAYER, MANU...
- Publication number 20230097791
- Publication date Mar 30, 2023
- RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Hyung Koun CHO
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY FOR ANALOG COMPUTING
- Publication number 20230089791
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE
- Publication number 20230078373
- Publication date Mar 16, 2023
- Samsung Electronics Co., Ltd.
- Seyun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Nanocomposite Phase-Change Memory Materials and Design and Se...
- Publication number 20220407001
- Publication date Dec 22, 2022
- University of Maryland, College Park
- Ichiro Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM PROCESS INTEGRATION SCHEME AND CELL STRUCTURE WITH REDUCED MAS...
- Publication number 20220406845
- Publication date Dec 22, 2022
- Hefei Reliance Memory Limited
- Zhichao LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH-RESISTANT DOPED SCAVENGING CARBIDE ELECTRODES
- Publication number 20220344586
- Publication date Oct 27, 2022
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY HAVING CONFINED FILAMENT FORMATION AND M...
- Publication number 20220320432
- Publication date Oct 6, 2022
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARYING NITROGEN CONTENT IN SWITCHING LAYER OF TWO-TERMINAL RESISTI...
- Publication number 20220320431
- Publication date Oct 6, 2022
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PHASE CHANGE BRIDGE MEMORY CELL
- Publication number 20220302377
- Publication date Sep 22, 2022
- International Business Machines Corporation
- JUNTAO LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...
- Publication number 20220271224
- Publication date Aug 25, 2022
- Ovonyx Memory Technology, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES
- Publication number 20220254833
- Publication date Aug 11, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM MEMORY CELL WITH MULTIPLE FILAMENTS
- Publication number 20220093687
- Publication date Mar 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Chieh Yang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE ACCESS MEMORY DEVICE AND FABRICATING METHOD OF THE SAME
- Publication number 20220085289
- Publication date Mar 17, 2022
- Research & Business Foundation Sungkyunkwan University
- Jung Hyun SUK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY ELEMENTS HAVING CONDUCTIVE ISLANDS EMBEDDED WITHIN...
- Publication number 20220069013
- Publication date Mar 3, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS OF FORMING MEMORY DEVICES
- Publication number 20210399055
- Publication date Dec 23, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun LOY
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20210343937
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-Yen PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedded BEOL Memory Device with Top Electrode Pillar
- Publication number 20210234095
- Publication date Jul 29, 2021
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE
- Publication number 20210202840
- Publication date Jul 1, 2021
- Samsung Electronics Co., Ltd.
- Seyun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOFF
- Publication number 20210175421
- Publication date Jun 10, 2021
- WINBOND ELECTRONICS CORP.
- Meng-Hung LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20210167130
- Publication date Jun 3, 2021
- Samsung Electronics Co., Ltd.
- Kyusul PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY WITH CONFINED CELL
- Publication number 20210143216
- Publication date May 13, 2021
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20210066586
- Publication date Mar 4, 2021
- KIOXIA Corporation
- Hiroyuki ODE
- G11 - INFORMATION STORAGE
Information Patent Application
FILAMENTARY TYPE NON-VOLATILE MEMORY DEVICE
- Publication number 20210066395
- Publication date Mar 4, 2021
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Gabriele NAVARRO
- H01 - BASIC ELECTRIC ELEMENTS

the switching components having a common active material layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Resistive random access memory and manufacturing method thereoff

Integrated circuit structure

Variable resistance memory device

Storage device and storage unit with a chalcogen element

Semiconductor memory device

Variable resistance memory device and method of fabricating the same

Method of producing a recurrent neural network computer

RRAM process integration scheme and cell structure with reduced mas...

Hybrid memristor/field-effect transistor memory cell and its inform...

Memory devices and methods of forming memory devices

Resistive memory elements having conductive islands embedded within...

Array of cross point memory cells

Resistive memory architectures with multiple memory cells per acces...

Electrically rotatable antennas formed from an optically tunable ma...

Semiconductor devices and related methods

Embedded BEOL memory device with top electrode pillar

RRAM memory cell with multiple filaments

Oxide-based resistive non-volatile memory cell and method for manuf...

Memory devices and methods of forming memory devices

Non-volatile memory elements with a multi-level cell configuration

Semiconductor device

Resistive memory device with meshed electrodes

One-time programmable memory using gate-all-around structures

Device including element having rectification characteristics and t...

Semiconductor storage device

Resistive memory device with meshed electrodes

Fragmenting computer chips

3D memory with confined cell

Rectifying element and switching element having the rectifying element

Phase change memory

Patents Applicationslast 30 patents

VERTICAL PHASE CHANGE MEMORY DEVICE

RRAM STRUCTURE AND METHOD OF FABRICATING THE SAME

RESISTIVE MEMORY ELEMENT ARRAYS WITH SHARED ELECTRODE STRIPS

NEURAL NETWORK SYSTEM, HIGH EFFICIENCY EMBEDDED-ARTIFICIAL SYNAPTIC...

LATERAL MULTI-BIT MEMORY DEVICES AND METHODS OF MAKING THE SAME

IN-SITU LOW TEMPERATURE DIELECTRIC DEPOSITION AND SELECTIVE TRIM OF...

VARIABLE RESISTANCE MEMORY DEVICE

RESISTIVE SWITCHING MEMORY DEVICE INCLUDING DUAL ACTIVE LAYER, MANU...

RESISTIVE MEMORY FOR ANALOG COMPUTING

VARIABLE RESISTANCE MEMORY DEVICE

Novel Nanocomposite Phase-Change Memory Materials and Design and Se...

RRAM PROCESS INTEGRATION SCHEME AND CELL STRUCTURE WITH REDUCED MAS...

ETCH-RESISTANT DOPED SCAVENGING CARBIDE ELECTRODES

RESISTIVE SWITCHING MEMORY HAVING CONFINED FILAMENT FORMATION AND M...

VARYING NITROGEN CONTENT IN SWITCHING LAYER OF TWO-TERMINAL RESISTI...

VERTICAL PHASE CHANGE BRIDGE MEMORY CELL

RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...

SEMICONDUCTOR MEMORY DEVICES

RRAM MEMORY CELL WITH MULTIPLE FILAMENTS

RESISTANCE ACCESS MEMORY DEVICE AND FABRICATING METHOD OF THE SAME

RESISTIVE MEMORY ELEMENTS HAVING CONDUCTIVE ISLANDS EMBEDDED WITHIN...

MEMORY DEVICES AND METHODS OF FORMING MEMORY DEVICES

INTEGRATED CIRCUIT STRUCTURE

Embedded BEOL Memory Device with Top Electrode Pillar

VARIABLE RESISTANCE MEMORY DEVICE

RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOFF

VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

3D MEMORY WITH CONFINED CELL

SEMICONDUCTOR MEMORY DEVICE

FILAMENTARY TYPE NON-VOLATILE MEMORY DEVICE