Three or more terminal devices

Industry

CPC
H01L45/1206

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/1206Three or more terminal devices

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Magnesium ion based synaptic device
- Patent number 11,690,304
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Douglas M. Bishop
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate formation in memory
- Patent number 11,652,153
- Issue date May 16, 2023
- Micron Technology, Inc.
- Thomas M. Graettinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell including programmable resistors with transistor compon...
- Patent number 11,646,079
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Der Chih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,637,240
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsing-Lien Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Stackable symmetrical operation memory bit cell structure with bidi...
- Patent number 11,621,297
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Crossbar array circuit with parallel grounding lines
- Patent number 11,610,942
- Issue date Mar 21, 2023
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device
- Patent number 11,611,039
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Hao Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual resistive random-access memory with two transistors
- Patent number 11,605,673
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive amorphous oxide contact layers
- Patent number 11,600,775
- Issue date Mar 7, 2023
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory
- Patent number 11,594,676
- Issue date Feb 28, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a FinFET device
- Patent number 11,594,680
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chang-Miao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, memory cells and semiconductor constructions
- Patent number 11,594,611
- Issue date Feb 28, 2023
- Micron Technology, Inc.
- Durai Vishak Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neuromorphic device with oxygen scavenging gate
- Patent number 11,586,899
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Teodor Krassimirov Todorov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nonvolatile memory device with vertical string including semiconduc...
- Patent number 11,574,677
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Jungho Yoon
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device including phase change material layers...
- Patent number 11,563,056
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with selectors
- Patent number 11,557,630
- Issue date Jan 17, 2023
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive random access memory device
- Patent number 11,557,344
- Issue date Jan 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Der Chih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal insulator transition field programmable routing block
- Patent number 11,522,130
- Issue date Dec 6, 2022
- Intel Corporation
- Daniel H. Morris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 11,502,128
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neuromorphic devices using layers of ion reservoirs and ion conduct...
- Patent number 11,488,001
- Issue date Nov 1, 2022
- International Business Machines Corporation
- Ning Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nonvolatile memory device having a resistance change layer and a pl...
- Patent number 11,482,667
- Issue date Oct 25, 2022
- SK Hynix Inc.
- Jae Hyun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS-compatible protonic resistive devices
- Patent number 11,462,683
- Issue date Oct 4, 2022
- Massachusetts Institute of Technology
- Oguzhan Murat Onen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neuromorphic device driven by copper ion intercalation
- Patent number 11,455,521
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Teodor K. Todorov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Thermally sensitive ionic redox transistor
- Patent number 11,450,802
- Issue date Sep 20, 2022
- National Technology & Engineering Solutions of Sandia, LLC
- Yiyang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconducting metal oxide memory device using hydrogen-mediated th...
- Patent number 11,430,512
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Marcus Johannes Henricus Van Dal
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-terminal neuromorphic device
- Patent number 11,397,544
- Issue date Jul 26, 2022
- International Business Machines Corporation
- Ghazi Sarwat Syed
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Thin film based 1T-1R cell with resistive random access memory belo...
- Patent number 11,393,526
- Issue date Jul 19, 2022
- Intel Corporation
- Ravi Pillarisetty
- G11 - INFORMATION STORAGE
Information Patent Grant
Carbon-based volatile and non-volatile memristors
- Patent number 11,393,976
- Issue date Jul 19, 2022
- Massachusetts Institute of Technology
- Pablo Jarillo-Herrero
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including variable resistance element
- Patent number 11,380,844
- Issue date Jul 5, 2022
- SK hynix Inc.
- Jae-Hyun Han
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device including memory cells and method for manufact...
- Patent number 11,380,369
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE MEMORY ELEMENTS ACCESSED BY BIPOLAR JUNCTION TRANSISTORS
- Publication number 20240147736
- Publication date May 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK SIDE PHASE CHANGE MEMORY
- Publication number 20240074333
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Carl Radens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY ELEMENT ARRAYS WITH SHARED ELECTRODE STRIPS
- Publication number 20240023345
- Publication date Jan 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh Gopinath
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICE HAVING RESISTANCE CHANGE PROPERTY
- Publication number 20230309427
- Publication date Sep 28, 2023
- SK HYNIX INC.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20230301119
- Publication date Sep 21, 2023
- KIOXIA Corporation
- Kensuke TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEURAL NETWORK SYSTEM, HIGH DENSITY EMBEDDED-ARTIFICIAL SYNAPTIC EL...
- Publication number 20230289577
- Publication date Sep 14, 2023
- National Tsing Hua University
- Ya-Chin KING
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICES PERFORMING THRESHOLD SWITCHING
- Publication number 20230292532
- Publication date Sep 14, 2023
- SK HYNIX INC.
- Woo Cheol LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEURAL NETWORK SYSTEM, HIGH EFFICIENCY EMBEDDED-ARTIFICIAL SYNAPTIC...
- Publication number 20230292533
- Publication date Sep 14, 2023
- National Tsing Hua University
- Ya-Chin KING
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THREE-DIMENSIONAL RESISTIVE RANDOM ACCESS MEMORY STRUCTURE
- Publication number 20230240083
- Publication date Jul 27, 2023
- National Tsing Hua University
- Ya-Chin KING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20230209840
- Publication date Jun 29, 2023
- Changxin Memory Technologies, Inc.
- Qingsong DU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-TERMINAL SYNAPTIC DEVICE
- Publication number 20230172080
- Publication date Jun 1, 2023
- Hyundai Motor Company
- Su-Jung Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20230113903
- Publication date Apr 13, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Yu-Der CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
THREE TERMINAL PHASE CHANGE MEMORY WITH SELF-ALIGNED CONTACTS
- Publication number 20230081603
- Publication date Mar 16, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING CHANNEL LAYER INCLUDING VARIABLE RESIST...
- Publication number 20230082400
- Publication date Mar 16, 2023
- SK HYNIX INC.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED BACKSIDE PCRAM DEVICE STRUCTURE
- Publication number 20230068754
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- G11 - INFORMATION STORAGE
Information Patent Application
3D VERTICAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230047277
- Publication date Feb 16, 2023
- POSTECH Research and Business Development Foundation
- Seyoung KIM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230013047
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Che CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND PREPARATION METHOD THEREOF
- Publication number 20230008157
- Publication date Jan 12, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- WEI CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECONFIGURABLE MEMTRANSISTORS, FABRICATING METHODS AND APPLICATIONS...
- Publication number 20230004803
- Publication date Jan 5, 2023
- Northwestern University
- Mark C. Hersam
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
1T1R MEMORY WITH A 3D STRUCTURE
- Publication number 20220415967
- Publication date Dec 29, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Sylvain BARRAUD
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC SYNAPSE DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220406998
- Publication date Dec 22, 2022
- Agency for Science, Technology and Research
- Wen Dong Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220384525
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH MEMORY STRINGS USING VARIABLE RESISTANCE MEMORY...
- Publication number 20220367568
- Publication date Nov 17, 2022
- KIOXIA Corporation
- Ryu OGIWARA
- G11 - INFORMATION STORAGE
Information Patent Application
REPLACEMENT GATE FORMATION IN MEMORY
- Publication number 20220359716
- Publication date Nov 10, 2022
- Micron Technology, Inc.
- Thomas M. Graettinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTING METAL OXIDE MEMORY DEVICE USING HYDROGEN-MEDIATED TH...
- Publication number 20220359009
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Marcus Johannes Henricus VAN DAL
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING ACTIVE LAYER WITH VARIABLE RESISTANCE
- Publication number 20220352461
- Publication date Nov 3, 2022
- SK hynix Inc.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MEMORY CELLS AND METHOD FOR MANUFACT...
- Publication number 20220335983
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20220285440
- Publication date Sep 8, 2022
- KIOXIA Corporation
- Masahiro SHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE TERMINAL NEUROMORPHIC SYNAPTIC DEVICE AND METHOD FOR MANUFACT...
- Publication number 20220285615
- Publication date Sep 8, 2022
- Kyungpook National University Industry-Academic Cooperation Foundation
- Jiyong Woo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTRONIC DEVICE INCLUDING RESISTANCE CHANGE CHANNEL LAYER
- Publication number 20220271221
- Publication date Aug 25, 2022
- SK hynix Inc.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS

Three or more terminal devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnesium ion based synaptic device

Replacement gate formation in memory

Memory cell including programmable resistors with transistor compon...

Semiconductor structure and method for forming the same

Stackable symmetrical operation memory bit cell structure with bidi...

Crossbar array circuit with parallel grounding lines

Resistive random access memory device

Dual resistive random-access memory with two transistors

Conductive amorphous oxide contact layers

Resistive random-access memory

Method of forming a FinFET device

Transistors, memory cells and semiconductor constructions

Neuromorphic device with oxygen scavenging gate

Nonvolatile memory device with vertical string including semiconduc...

Semiconductor memory device including phase change material layers...

Quantum dot devices with selectors

Resistive random access memory device

Metal insulator transition field programmable routing block

Memory device and method of forming the same

Neuromorphic devices using layers of ion reservoirs and ion conduct...

Nonvolatile memory device having a resistance change layer and a pl...

CMOS-compatible protonic resistive devices

Neuromorphic device driven by copper ion intercalation

Thermally sensitive ionic redox transistor

Semiconducting metal oxide memory device using hydrogen-mediated th...

Multi-terminal neuromorphic device

Thin film based 1T-1R cell with resistive random access memory belo...

Carbon-based volatile and non-volatile memristors

Semiconductor device including variable resistance element

Semiconductor device including memory cells and method for manufact...

Patents Applicationslast 30 patents

RESISTIVE MEMORY ELEMENTS ACCESSED BY BIPOLAR JUNCTION TRANSISTORS

BACK SIDE PHASE CHANGE MEMORY

RESISTIVE MEMORY ELEMENT ARRAYS WITH SHARED ELECTRODE STRIPS

ELECTRONIC DEVICE HAVING RESISTANCE CHANGE PROPERTY

MEMORY DEVICE

NEURAL NETWORK SYSTEM, HIGH DENSITY EMBEDDED-ARTIFICIAL SYNAPTIC EL...

SEMICONDUCTOR DEVICES PERFORMING THRESHOLD SWITCHING

NEURAL NETWORK SYSTEM, HIGH EFFICIENCY EMBEDDED-ARTIFICIAL SYNAPTIC...

THREE-DIMENSIONAL RESISTIVE RANDOM ACCESS MEMORY STRUCTURE

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

THREE-TERMINAL SYNAPTIC DEVICE

RESISTIVE RANDOM ACCESS MEMORY DEVICE

THREE TERMINAL PHASE CHANGE MEMORY WITH SELF-ALIGNED CONTACTS

ELECTRONIC DEVICE INCLUDING CHANNEL LAYER INCLUDING VARIABLE RESIST...

EMBEDDED BACKSIDE PCRAM DEVICE STRUCTURE

3D VERTICAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME

RESISTIVE MEMORY DEVICE AND PREPARATION METHOD THEREOF

RECONFIGURABLE MEMTRANSISTORS, FABRICATING METHODS AND APPLICATIONS...

1T1R MEMORY WITH A 3D STRUCTURE

ELECTRONIC SYNAPSE DEVICE AND METHOD OF FORMING THE SAME

MEMORY DEVICE AND METHOD OF FORMING THE SAME

MEMORY DEVICE WITH MEMORY STRINGS USING VARIABLE RESISTANCE MEMORY...

REPLACEMENT GATE FORMATION IN MEMORY

SEMICONDUCTING METAL OXIDE MEMORY DEVICE USING HYDROGEN-MEDIATED TH...

SEMICONDUCTOR DEVICE INCLUDING ACTIVE LAYER WITH VARIABLE RESISTANCE

SEMICONDUCTOR DEVICE INCLUDING MEMORY CELLS AND METHOD FOR MANUFACT...

SEMICONDUCTOR STORAGE DEVICE

THREE TERMINAL NEUROMORPHIC SYNAPTIC DEVICE AND METHOD FOR MANUFACT...

ELECTRONIC DEVICE INCLUDING RESISTANCE CHANGE CHANNEL LAYER