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H01L27/11565

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/11565Top-view layout

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device and manufacturing method of the semicon...
- Patent number 11,688,682
- Issue date Jun 27, 2023
- SK hynix Inc.
- Jin Won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device and method for fabricating the same
- Patent number 11,683,934
- Issue date Jun 20, 2023
- Samsung Electronics Co., Ltd.
- Young-Jin Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D flash memory with annular channel structure and array layout the...
- Patent number 11,678,486
- Issue date Jun 13, 2023
- MACRONIX INIERNATIONAL CO., LTD.
- Hang-Ting Lue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,676,836
- Issue date Jun 13, 2023
- Samsung Electronics Co., Ltd.
- Jae Ick Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device having stacked structures and method for manufact...
- Patent number 11,678,487
- Issue date Jun 13, 2023
- SK Hynix Inc.
- Ki Hong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including at least one channel post wit...
- Patent number 11,672,122
- Issue date Jun 6, 2023
- SK hynix Inc.
- Sung Wook Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices
- Patent number 11,672,119
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Jisung Cheon
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense line structures in capacitive sense NAND memory
- Patent number 11,670,379
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays and methods used in forming a memory array comprising...
- Patent number 11,672,114
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Bharat Bhushan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing same
- Patent number 11,672,117
- Issue date Jun 6, 2023
- Kioxia Corporation
- Kotaro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Page buffer and memory device including the same
- Patent number 11,670,377
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Se Won Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical memory device having an insulator layer for improved yield
- Patent number 11,665,906
- Issue date May 30, 2023
- Kioxia Corporation
- Tomoya Inden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 11,665,892
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having adjoined source contact stru...
- Patent number 11,665,901
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Lu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and photomask
- Patent number 11,665,898
- Issue date May 30, 2023
- Kioxia Corporation
- Daisuke Kawamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices including charge trapping patterns with imp...
- Patent number 11,665,900
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Younghwan Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device and manufacturing method thereof
- Patent number 11,665,902
- Issue date May 30, 2023
- Kioxia Corporation
- Takayuki Kashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory devices
- Patent number 11,659,712
- Issue date May 23, 2023
- Samsung Electronics Co., Ltd.
- Taehee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and manufacturing method of the semicon...
- Patent number 11,658,113
- Issue date May 23, 2023
- SK hynix Inc.
- Jin Won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies
- Patent number 11,658,132
- Issue date May 23, 2023
- Micron Technology, Inc.
- Rohit Kothari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Access operations in capacitive sense NAND memory
- Patent number 11,657,880
- Issue date May 23, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device including discrete charge storage e...
- Patent number 11,659,711
- Issue date May 23, 2023
- SanDisk Technologies LLC
- Yuki Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,653,495
- Issue date May 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,647,628
- Issue date May 9, 2023
- Kioxia Corporation
- Yuta Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliability compensation for uneven NAND block degradation
- Patent number 11,646,081
- Issue date May 9, 2023
- SanDisk Technologies LLC
- Xiang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor storage device
- Patent number 11,646,354
- Issue date May 9, 2023
- Kioxia Corporation
- Shinya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods used in forming integrated circuitry comprising a stack com...
- Patent number 11,647,633
- Issue date May 9, 2023
- Micron Technology, Inc.
- Jivaan Kishore Jhothiraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays and methods used in forming a memory array comprising...
- Patent number 11,641,742
- Issue date May 2, 2023
- Micron Technology, Inc.
- Cole Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,641,743
- Issue date May 2, 2023
- Samsung Electronics Co., Ltd.
- Kwangyoung Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory device
- Patent number 11,641,738
- Issue date May 2, 2023
- Samsung Electronics Co., Ltd.
- Woosung Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240179903
- Publication date May 30, 2024
- WINBOND ELECTRONICS CORP.
- Frederick Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD
- Publication number 20240170393
- Publication date May 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY
- Publication number 20240114685
- Publication date Apr 4, 2024
- Western Digital Technologies, Inc.
- Liang Li
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENING MONITORIN...
- Publication number 20240107758
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Hiroyuki OGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240107760
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240107761
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240098989
- Publication date Mar 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhengliang Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240081058
- Publication date Mar 7, 2024
- Macronix International Co., Ltd.
- Yan-Ru Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED...
- Publication number 20240079057
- Publication date Mar 7, 2024
- Micron Technology, Inc.
- Anna Maria Conti
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICES INCLUDING A METAL SILICIDE MATERIAL OVER A SOURC...
- Publication number 20240081057
- Publication date Mar 7, 2024
- Micron Technology, Inc.
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240074181
- Publication date Feb 29, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...
- Publication number 20240074200
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Bing ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FOLDED STAIRCASE VIA ROUTING FOR MEMORY
- Publication number 20240071902
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Shuangqiang Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20240071498
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Yongjun Jeff Hu
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Circuitry And Method Used In Forming Memory Circuitry
- Publication number 20240071495
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Jiewei Chen
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DIPOLE-CONTAINING BLOCKIN...
- Publication number 20240074170
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Takashi YUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED ASSEMBLY CONTAINING CONDUCTIVE VIA STRUCTURES EXTENDING THRO...
- Publication number 20240074171
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Masanori TSUTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED...
- Publication number 20240074184
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Masaaki Higuchi
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Circuitry And Method Used In Forming Memory Circuitry
- Publication number 20240071496
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- John D. Hopkins
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240074185
- Publication date Feb 29, 2024
- SK HYNIX INC.
- Young Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES INCLUDING STACKS INCLUDING CONDUCTIVE STRUCTURES...
- Publication number 20240055350
- Publication date Feb 15, 2024
- Micron Technology, Inc.
- Mark S. Swenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING TRENCH BRIDGES AND METHOD...
- Publication number 20240057332
- Publication date Feb 15, 2024
- SANDISK TECHNOLOGIES LLC
- Koichi MATSUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING TRENCH BRIDGES AND METHOD...
- Publication number 20240057331
- Publication date Feb 15, 2024
- SANDISK TECHNOLOGIES LLC
- Koichi MATSUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Circuitry And Method Used In Forming Memory Circuitry
- Publication number 20240046989
- Publication date Feb 8, 2024
- Micron Technology, Inc.
- Jiewei Chen
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICES COMPRISING A SOURCE IMPLANT REGION, AND RELATED...
- Publication number 20240030285
- Publication date Jan 25, 2024
- Micron Technology, Inc.
- Collin Howder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Circuitry And Method Used In Forming Memory Circuitry
- Publication number 20240029794
- Publication date Jan 25, 2024
- Micron Technology, Inc.
- Lifang Xu
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Circuitry And Method Used In Forming Memory Circuitry
- Publication number 20240029795
- Publication date Jan 25, 2024
- Micron Technology, Inc.
- Anna Maria Conti
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICES COMPRISING AN OXIDE FILL REGION, AND RELATED ELE...
- Publication number 20240032294
- Publication date Jan 25, 2024
- Micron Technology, Inc.
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240023329
- Publication date Jan 18, 2024
- SK HYNIX INC.
- Jae Ho KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES AND ELECTRONIC...
- Publication number 20240021219
- Publication date Jan 18, 2024
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE

Top-view layout

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor memory device and manufacturing method of the semicon...

Nonvolatile memory device and method for fabricating the same

3D flash memory with annular channel structure and array layout the...

Semiconductor device

Electronic device having stacked structures and method for manufact...

Semiconductor memory device including at least one channel post wit...

Vertical memory devices

Sense line structures in capacitive sense NAND memory

Memory arrays and methods used in forming a memory array comprising...

Semiconductor memory device and method for manufacturing same

Page buffer and memory device including the same

Vertical memory device having an insulator layer for improved yield

Staircase structure in three-dimensional memory device and method f...

Three-dimensional memory device having adjoined source contact stru...

Semiconductor device and photomask

Vertical memory devices including charge trapping patterns with imp...

Semiconductor storage device and manufacturing method thereof

Three-dimensional semiconductor memory devices

Semiconductor memory device and manufacturing method of the semicon...

Integrated assemblies

Access operations in capacitive sense NAND memory

Three-dimensional memory device including discrete charge storage e...

Three-dimensional memory device with source structure and methods f...

Semiconductor memory device

Reliability compensation for uneven NAND block degradation

Semiconductor device and semiconductor storage device

Methods used in forming integrated circuitry comprising a stack com...

Memory arrays and methods used in forming a memory array comprising...

Semiconductor devices

Three-dimensional semiconductor memory device

Patents Applicationslast 30 patents

MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD

CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENING MONITORIN...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED...

ELECTRONIC DEVICES INCLUDING A METAL SILICIDE MATERIAL OVER A SOURC...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...

FOLDED STAIRCASE VIA ROUTING FOR MEMORY

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

Memory Circuitry And Method Used In Forming Memory Circuitry

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DIPOLE-CONTAINING BLOCKIN...

BONDED ASSEMBLY CONTAINING CONDUCTIVE VIA STRUCTURES EXTENDING THRO...

ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED...

Memory Circuitry And Method Used In Forming Memory Circuitry

3D SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

ELECTRONIC DEVICES INCLUDING STACKS INCLUDING CONDUCTIVE STRUCTURES...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING TRENCH BRIDGES AND METHOD...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING TRENCH BRIDGES AND METHOD...

Memory Circuitry And Method Used In Forming Memory Circuitry

ELECTRONIC DEVICES COMPRISING A SOURCE IMPLANT REGION, AND RELATED...

Memory Circuitry And Method Used In Forming Memory Circuitry

Memory Circuitry And Method Used In Forming Memory Circuitry

ELECTRONIC DEVICES COMPRISING AN OXIDE FILL REGION, AND RELATED ELE...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES AND ELECTRONIC...