Transmutation doping

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CPC
Y10S148/165

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/165Transmutation doping

Industries

Patents Grantslast 30 patents

Information Patent Grant
Transparent semiconductor crystals
- Patent number 5,259,917
- Issue date Nov 9, 1993
- The United States of America as represented by the Secretary of the Air Force
- Melvin C. Ohmer
- C30 - CRYSTAL GROWTH
Information Patent Grant
P-well CMOS process using neutron activated doped N-/N+ silicon sub...
- Patent number 5,212,100
- Issue date May 18, 1993
- Texas Instruments Incorporated
- Emily A. Groves
- A47 - FURNITURE DOMESTIC ARTICLES OR APPLIANCES COFFEE MILLS SPICE MILLS SUCT...
Information Patent Grant
Neutron transmutation doping of a silicon wafer
- Patent number 4,910,156
- Issue date Mar 20, 1990
- Toshiba Ceramics Co., Ltd.
- Shin'ichiro Takasu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing regions having adjustable uniform doping i...
- Patent number 4,728,371
- Issue date Mar 1, 1988
- Siemens Aktiengesellschaft
- Ernst W. Haas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making thyristor with a high tolerable bias voltage
- Patent number 4,639,276
- Issue date Jan 27, 1987
- Mitsubishi Denki Kabushiki Kaisha
- Tsutomu Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low energy ion etching
- Patent number 4,530,734
- Issue date Jul 23, 1985
- Walter F. Klima
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Semiconductor timing device with radioactive material at the floati...
- Patent number 4,275,405
- Issue date Jun 23, 1981
- Mullard Limited
- John M. Shannon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing the switching time of semiconductor devices by neutron irr...
- Patent number 4,240,844
- Issue date Dec 23, 1980
- Westinghouse Electric Corp.
- Patrick E. Felice
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline silicon semiconducting material by nuclear transmut...
- Patent number 4,129,463
- Issue date Dec 12, 1978
- The United States of America as represented by the United States Department o...
- John W. Cleland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the production of n-doped silicon with a dish-shaped pro...
- Patent number 4,119,441
- Issue date Oct 10, 1978
- Siemens Aktiengesellschaft
- Ernst Haas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing homogeneously doped n-type Si monocrystals by t...
- Patent number 4,042,454
- Issue date Aug 16, 1977
- Siemens Aktiengesellschaft
- Ernst Haas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing homogeneously doped n-type Si monocrystals and...
- Patent number 4,027,051
- Issue date May 31, 1977
- Siemens Aktiengesellschaft
- Konrad Reuschel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing homogeneously doped p-conductive semiconductor...
- Patent number 4,025,365
- Issue date May 24, 1977
- Siemens Aktiengesellschaft
- Joachim Martin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of doping a semiconductor layer
- Patent number 3,967,982
- Issue date Jul 6, 1976
- Siemens Aktiengesellschaft
- Heinz-Herbert Arndt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3858047
- Patent number 3,858,047
- Issue date Dec 31, 1974
- G01 - MEASURING TESTING
Information Patent Grant
3733222
- Patent number 3,733,222
- Issue date May 15, 1973
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3691376
- Patent number 3,691,376
- Issue date Sep 12, 1972
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3535775
- Patent number 3,535,775
- Issue date Oct 27, 1970
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3533857
- Patent number 3,533,857
- Issue date Oct 13, 1970
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3451864
- Patent number 3,451,864
- Issue date Jun 24, 1969
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3430043
- Patent number 3,430,043
- Issue date Feb 25, 1969
- G01 - MEASURING TESTING
Information Patent Grant
3425111
- Patent number 3,425,111
- Issue date Feb 4, 1969
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3298880
- Patent number 3,298,880
- Issue date Jan 17, 1967
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3280330
- Patent number 3,280,330
- Issue date Oct 18, 1966
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
3269915
- Patent number 3,269,915
- Issue date Aug 30, 1966
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
3255050
- Patent number 3,255,050
- Issue date Jun 7, 1966
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3076732
- Patent number 3,076,732
- Issue date Feb 5, 1963
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
2743226
- Patent number 2,743,226
- Issue date Apr 24, 1956
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
2588254
- Patent number 2,588,254
- Issue date Mar 4, 1952
- F24 - HEATING RANGES VENTILATING

Transmutation doping

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Transparent semiconductor crystals

P-well CMOS process using neutron activated doped N-/N+ silicon sub...

Neutron transmutation doping of a silicon wafer

Method for manufacturing regions having adjustable uniform doping i...

Method of making thyristor with a high tolerable bias voltage

Low energy ion etching

Semiconductor timing device with radioactive material at the floati...

Reducing the switching time of semiconductor devices by neutron irr...

Polycrystalline silicon semiconducting material by nuclear transmut...

Method for the production of n-doped silicon with a dish-shaped pro...

Method of producing homogeneously doped n-type Si monocrystals by t...

Method of producing homogeneously doped n-type Si monocrystals and...

Method of producing homogeneously doped p-conductive semiconductor...

Method of doping a semiconductor layer

3858047

3733222

3691376

3535775

3533857

3451864

3430043

3425111

3298880

3280330

3269915

3255050

3076732

2743226

2588254