3451864

Information

• Patent Grant
• 3451864

• References
• Source

• Patent Number

  3,451,864

• Date Filed

  Not available

• Date Issued

  Tuesday, June 24, 1969
  56 years ago

• CPC

  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02543 - Phosphides
  • H01L21/02546 - Arsenides
  • H01L21/02576 - N-type
  • H01L21/02579 - P-type
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • Y10S65/04 - Electric heat
  • Y10S148/097 - Lattice strain and defects
  • Y10S148/165 - Transmutation doping
  • Y10S252/95 - Doping agent source material
  • Y10S252/951 - for vapor transport
  • Y10S438/933 - Germanium or silicon or Ge-Si on III-V

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 065 - Glass manufacturing
  • 148 - Metal treatment
  • 252 - Compositions
  • 257 - Active solid-state devices
  • 376 - Induced nuclear reactions: processes, systems, and elements
  • 438 - Semiconductor device manufacturing: process