using the removal of at least part of spacer

Industry

CPC
H01L29/6653

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/6653using the removal of at least part of spacer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating a doped region of a microelectronic device
- Patent number 11,967,633
- Issue date Apr 23, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 11,961,899
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 11,961,767
- Issue date Apr 16, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an epitaxy region
- Patent number 11,955,547
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Jen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming air spacers in semiconductor devices
- Patent number 11,955,535
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed gate for an MV device
- Patent number 11,948,938
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures in multi-gate semiconductor devices and method...
- Patent number 11,948,998
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of fabricating the semiconductor...
- Patent number 11,942,513
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Guan-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and method of fabrication thereof
- Patent number 11,942,548
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having asymmetrical source/drain
- Patent number 11,942,515
- Issue date Mar 26, 2024
- Samsung Electronics Co., Ltd.
- Jongki Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of forming the same
- Patent number 11,942,523
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TMD inverted nanowire integration
- Patent number 11,935,956
- Issue date Mar 19, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contact structures and fabrication for metal on both sides...
- Patent number 11,935,933
- Issue date Mar 19, 2024
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing microelectronic components
- Patent number 11,929,290
- Issue date Mar 12, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabrice Nemouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stack
- Patent number 11,929,413
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,929,419
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around I/O engineering
- Patent number 11,923,441
- Issue date Mar 5, 2024
- Applied Materials, Inc.
- Steven C. H. Hung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,923,358
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Pin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,923,432
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yoh-Rong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluorine incorporation method for nanosheet
- Patent number 11,915,937
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around transistor with dual inner spacers
- Patent number 11,916,122
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming different types of devices
- Patent number 11,917,803
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical device having a protrusion source
- Patent number 11,916,131
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- De-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device having contact plugs with re-ent...
- Patent number 11,916,147
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure
- Patent number 11,908,744
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate methods that include treating spacers to widen gate
- Patent number 11,908,695
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with a hybrid gate spacer including a low-k...
- Patent number 11,908,940
- Issue date Feb 20, 2024
- Intel Corporation
- Szuya S. Liao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Fin Field-Effect Transistor Device Having Contact Plugs with Re-Ent...
- Publication number 20240145597
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ISOLATION STRUCTURES
- Publication number 20240145579
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Yun PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ISOLATION STRUCTURES
- Publication number 20240145546
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240145576
- Publication date May 2, 2024
- TOKYO ELECTRON LIMITED
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET WITH DUAL ISOLATION REGIONS SEPARATED BY BURIED INNER SPACER
- Publication number 20240145578
- Publication date May 2, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SONOS MEMORY
- Publication number 20240145583
- Publication date May 2, 2024
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Tianquan SHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A FINFET BY IMPLANTING A DIELECTRIC WITH A...
- Publication number 20240145596
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement Gate Methods That Include Treating Spacers to Widen Gate
- Publication number 20240145250
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20240136428
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240128347
- Publication date Apr 18, 2024
- Samsung Electronics Co., Ltd.
- Nam Gyu CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE
- Publication number 20240128126
- Publication date Apr 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHODS FOR MANUFACTURING THE SAME
- Publication number 20240128313
- Publication date Apr 18, 2024
- Vanguard International Semiconductor Corporation
- Tse-Hsiao LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING NANOSHEET TRANSISTOR USING SACRIFICIAL SPACER AND INNER SPA...
- Publication number 20240120408
- Publication date Apr 11, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL
- Publication number 20240120193
- Publication date Apr 11, 2024
- Applied Materials, Inc.
- Shankar Venkataraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240113199
- Publication date Apr 4, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO IMPROVE PROFILE CONTROL DURING SELECTIVE ETCHING OF SILIC...
- Publication number 20240112920
- Publication date Apr 4, 2024
- American Air Liquide, Inc.
- Xiangyu GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...
- Publication number 20240105520
- Publication date Mar 28, 2024
- Intel Corporation
- Anthony ST. AMOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODES IN NANOSHEET TECHNOLOGY
- Publication number 20240096949
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE
- Publication number 20240096986
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Ting Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED
- Publication number 20240097034
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
- Publication number 20240096884
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...
- Publication number 20240088262
- Publication date Mar 14, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240088234
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHANSYUN DAVID YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE
- Publication number 20240088155
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Yu LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION
- Publication number 20240088268
- Publication date Mar 14, 2024
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING
- Publication number 20240088296
- Publication date Mar 14, 2024
- Intel Corporation
- Erica J. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE STRUCTURE WITH AIR-GAPS IN SPACER AND METHODS FOR FOR...
- Publication number 20240079471
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES
- Publication number 20240079266
- Publication date Mar 7, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF FLASH MEMORY CELL
- Publication number 20240072129
- Publication date Feb 29, 2024
- United Microelectronics Corp.
- Chih-Jung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240072156
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS

using the removal of at least part of spacer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for fabricating a doped region of a microelectronic device

Semiconductor devices and methods of manufacturing thereof

Dual metal silicide structures for advanced integrated circuit stru...

Dual metal gate structure having portions of metal gate layers in c...

Semiconductor device including an epitaxy region

Heterogeneous metal line compositions for advanced integrated circu...

Methods for forming air spacers in semiconductor devices

Recessed gate for an MV device

Isolation structures in multi-gate semiconductor devices and method...

Trench contact structures for advanced integrated circuit structure...

Semiconductor structure and method of fabricating the semiconductor...

Multi-gate device and method of fabrication thereof

Semiconductor device having asymmetrical source/drain

Semiconductor devices and methods of forming the same

TMD inverted nanowire integration

Backside contact structures and fabrication for metal on both sides...

Method of manufacturing microelectronic components

Semiconductor device structure with metal gate stack

Semiconductor device

Gate all around I/O engineering

Semiconductor device and manufacturing method thereof

Semiconductor device and method

Fluorine incorporation method for nanosheet

Gate all around transistor with dual inner spacers

Method for forming different types of devices

Vertical device having a protrusion source

Fin field-effect transistor device having contact plugs with re-ent...

Semiconductor device structure

Replacement gate methods that include treating spacers to widen gate

Field effect transistor with a hybrid gate spacer including a low-k...

Patents Applicationslast 30 patents

Fin Field-Effect Transistor Device Having Contact Plugs with Re-Ent...

TRANSISTOR ISOLATION STRUCTURES

TRANSISTOR ISOLATION STRUCTURES

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

NANOSHEET WITH DUAL ISOLATION REGIONS SEPARATED BY BURIED INNER SPACER

METHOD FOR MANUFACTURING SONOS MEMORY

METHOD OF MANUFACTURING A FINFET BY IMPLANTING A DIELECTRIC WITH A...

Replacement Gate Methods That Include Treating Spacers to Widen Gate

Semiconductor Device and Method

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE

SEMICONDUCTOR STRUCTURE AND METHODS FOR MANUFACTURING THE SAME

FORMING NANOSHEET TRANSISTOR USING SACRIFICIAL SPACER AND INNER SPA...

CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD TO IMPROVE PROFILE CONTROL DURING SELECTIVE ETCHING OF SILIC...

TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...

DIODES IN NANOSHEET TECHNOLOGY

METHOD FOR FORMING SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED

METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER

CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE

NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION

NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING

MOSFET DEVICE STRUCTURE WITH AIR-GAPS IN SPACER AND METHODS FOR FOR...

AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES

STRUCTURE OF FLASH MEMORY CELL

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF