using the removal of at least part of spacer

Industry

CPC
H01L29/6653

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/6653using the removal of at least part of spacer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Multi-gate device with air gap spacer and fabrication methods thereof
- Patent number 12,300,720
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around transistor with dual inner spacers
- Patent number 12,300,732
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistant contact method and structure
- Patent number 12,300,729
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,300,728
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contact structures and fabrication for metal on both sides...
- Patent number 12,288,810
- Issue date Apr 29, 2025
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel devices and method with anti-punch through process
- Patent number 12,278,276
- Issue date Apr 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ko-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TMD inverted nanowire integration
- Patent number 12,278,289
- Issue date Apr 15, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based laterally-diffused metal-oxide semiconductor field effect...
- Patent number 12,272,739
- Issue date Apr 8, 2025
- Texas Instruments Incorporated
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 12,272,734
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Shiang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with source/drain contact formed using bottom-...
- Patent number 12,266,688
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming the spacers of a transistor gate
- Patent number 12,261,211
- Issue date Mar 25, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Nicolas Posseme
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor structure
- Patent number 12,261,212
- Issue date Mar 25, 2025
- United Microelectronics Corp.
- Zhenhai Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,261,205
- Issue date Mar 25, 2025
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 12,255,247
- Issue date Mar 18, 2025
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer structures for gate-all-around field effect transistors
- Patent number 12,255,249
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including multiple inner spacers with differen...
- Patent number 12,249,639
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having a gate with a tapering bottom portion and a ga...
- Patent number 12,243,748
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,243,780
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ching-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature for multigate device performance and method of...
- Patent number 12,243,912
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,237,398
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Chia-Ming Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with leakage current suppression and method fo...
- Patent number 12,237,230
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in transistor devices and methods of forming same
- Patent number 12,237,419
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked transistors with different channel widths
- Patent number 12,230,544
- Issue date Feb 18, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 12,224,203
- Issue date Feb 11, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate dielectric formed using selective de...
- Patent number 12,224,334
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation between gate spacer and epitaxy structure
- Patent number 12,218,138
- Issue date Feb 4, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructures formed over a substrate and a gate structure wrappin...
- Patent number 12,218,218
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor devices having gate spacers...
- Patent number 12,218,216
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fish bone structure and methods of formin...
- Patent number 12,211,944
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructured channel regions for semiconductor devices
- Patent number 12,211,918
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250072081
- Publication date Feb 27, 2025
- WINBOND ELECTRONICS CORP.
- Cheng-Hong WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20250048703
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yu Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...
- Publication number 20250048698
- Publication date Feb 6, 2025
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS
- Publication number 20250022877
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO CREATE AIR GAPS
- Publication number 20240429091
- Publication date Dec 26, 2024
- LAM RESEARCH CORPORATION
- Patrick A. Van Cleemput
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER FORMATION THROUGH STIMULATION
- Publication number 20240413215
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Jen Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATION LAYER UNDER CONTACT
- Publication number 20240395623
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Wei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240395892
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSIFIED GATE SPACERS AND FORMATION THEREOF
- Publication number 20240395898
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-En CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE INCORPORATING AIR GAP
- Publication number 20240395808
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Ching WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING EPITAXIAL STRUCTURE
- Publication number 20240395604
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sai-Hooi YEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTO...
- Publication number 20240387658
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20240387691
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY ETCHED SPACERS FOR SEMICONDUCTOR DEVICE
- Publication number 20240387692
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yu KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated Fin Structures in Semiconductor Devices
- Publication number 20240387694
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Rung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURED CHANNEL REGIONS FOR SEMICONDUCTOR DEVICES
- Publication number 20240387673
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ION-ASSISTED SELF-LIMITED CONFORMAL ETCH
- Publication number 20240379372
- Publication date Nov 14, 2024
- TOKYO ELECTRON LIMITED
- Adam Pranda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER FEATURES FOR MULTI-GATE TRANSISTORS
- Publication number 20240379822
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Channel Devices and Method with Anti-Punch Through Process
- Publication number 20240379816
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ko-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH EMBEDDED EPITAXIAL STRUCTURE
- Publication number 20240379862
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ting-Yeh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240371644
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20240371940
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor With Void and Method of Forming The Same
- Publication number 20240371980
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE CONTACTS
- Publication number 20240371689
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR DEVICE AND DEVICES FABRICATED TH...
- Publication number 20240363395
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fu KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FUNNEL SHAPE SPACER AND METHODS OF FORMIN...
- Publication number 20240363426
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240355904
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Chien CHENG
- H01 - BASIC ELECTRIC ELEMENTS

using the removal of at least part of spacer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Multi-gate device with air gap spacer and fabrication methods thereof

Gate all around transistor with dual inner spacers

Low resistant contact method and structure

Semiconductor devices

Backside contact structures and fabrication for metal on both sides...

Multi-channel devices and method with anti-punch through process

TMD inverted nanowire integration

Fin-based laterally-diffused metal-oxide semiconductor field effect...

Semiconductor device and method for forming the same

Semiconductor device with source/drain contact formed using bottom-...

Method of forming the spacers of a transistor gate

Manufacturing method of semiconductor structure

Semiconductor device

Trench contact structures for advanced integrated circuit structure...

Inner spacer structures for gate-all-around field effect transistors

Semiconductor device including multiple inner spacers with differen...

FinFET device having a gate with a tapering bottom portion and a ga...

Semiconductor device structure and method for forming the same

Source/drain feature for multigate device performance and method of...

Semiconductor device and method for fabricating the same

Semiconductor device with leakage current suppression and method fo...

Gate structures in transistor devices and methods of forming same

Stacked transistors with different channel widths

Air gap spacer formation for nano-scale semiconductor devices

Semiconductor device with gate dielectric formed using selective de...

Air gap formation between gate spacer and epitaxy structure

Nanostructures formed over a substrate and a gate structure wrappin...

Method for manufacturing semiconductor devices having gate spacers...

Semiconductor device with fish bone structure and methods of formin...

Nanostructured channel regions for semiconductor devices

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

METHOD TO CREATE AIR GAPS

INNER SPACER FORMATION THROUGH STIMULATION

SEMICONDUCTOR DEVICE WITH ISOLATION LAYER UNDER CONTACT

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

DENSIFIED GATE SPACERS AND FORMATION THEREOF

SEMICONDUCTOR DEVICE STRUCTURE INCORPORATING AIR GAP

SEMICONDUCTOR STRUCTURE HAVING EPITAXIAL STRUCTURE

BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTO...

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

LATERALLY ETCHED SPACERS FOR SEMICONDUCTOR DEVICE

Isolated Fin Structures in Semiconductor Devices

NANOSTRUCTURED CHANNEL REGIONS FOR SEMICONDUCTOR DEVICES

METHOD FOR ION-ASSISTED SELF-LIMITED CONFORMAL ETCH

SEMICONDUCTOR DEVICES

INNER SPACER FEATURES FOR MULTI-GATE TRANSISTORS

Multi-Channel Devices and Method with Anti-Punch Through Process

SEMICONDUCTOR DEVICE STRUCTURE WITH EMBEDDED EPITAXIAL STRUCTURE

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE

Fin Field-Effect Transistor With Void and Method of Forming The Same

TRANSISTOR GATE CONTACTS

METHOD FOR FORMING A SEMICONDUCTOR DEVICE AND DEVICES FABRICATED TH...

SEMICONDUCTOR DEVICE WITH FUNNEL SHAPE SPACER AND METHODS OF FORMIN...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME