with a heterojunction interface channel or gate

Industry

CPC
H01L29/66431

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66431with a heterojunction interface channel or gate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Multi-channel transistor
- Patent number 12,183,814
- Issue date Dec 31, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Steven J. Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor device and method of manufacturin...
- Patent number 12,166,101
- Issue date Dec 10, 2024
- ELECTRONICS AND TELECOMMINICATIONS RESEARCH INSTITUTE
- Soo Cheol Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of forming the same
- Patent number 12,159,930
- Issue date Dec 3, 2024
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device that includes a conductive member and an elect...
- Patent number 12,154,966
- Issue date Nov 26, 2024
- Kabushiki Kaisha Toshiba
- Hiroshi Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium Nitride high-electron mobility transistors with p-type laye...
- Patent number 12,142,674
- Issue date Nov 12, 2024
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High hole mobility transistor (HHMT) and method of manufacturing th...
- Patent number 12,136,669
- Issue date Nov 5, 2024
- GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses including multiple channel materials within a tier stack
- Patent number 12,132,116
- Issue date Oct 29, 2024
- Akira Goda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,125,885
- Issue date Oct 22, 2024
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor IC device including passivation layer for inactivatin...
- Patent number 12,119,397
- Issue date Oct 15, 2024
- Samsung Electronics Co., Ltd.
- Sunkyu Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 12,107,156
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for quantum dot array devices with metal sourc...
- Patent number 12,107,144
- Issue date Oct 1, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode N-channel and P-channel GaN device integration str...
- Patent number 12,051,742
- Issue date Jul 30, 2024
- Southeast University
- Long Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,015,074
- Issue date Jun 18, 2024
- WIN SEMICONDUCTORS CORP.
- Chun-Han Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with controllable resistance
- Patent number 12,015,056
- Issue date Jun 18, 2024
- International Business Machines Corporation
- Yulong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor on insulator on wide band-gap semiconductor
- Patent number 12,009,421
- Issue date Jun 11, 2024
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride-based high electron mobility trans...
- Patent number 12,002,880
- Issue date Jun 4, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flexible transistors with near-junction heat dissipation
- Patent number 11,996,473
- Issue date May 28, 2024
- Wisconsin Alumni Research Foundation
- Zhenqiang Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plurality of stacked transistors attached by solder balls
- Patent number 11,984,387
- Issue date May 14, 2024
- Kabushiki Kaisha Toshiba
- Toru Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor package having a chip carrier with a pad offset feature
- Patent number 11,984,392
- Issue date May 14, 2024
- Infineon Technologies AG
- Chee Yang Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multichannel heterostructure and manufact...
- Patent number 11,984,496
- Issue date May 14, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a polymer support...
- Patent number 11,978,671
- Issue date May 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Gordon M. Grivna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with overlapping gates
- Patent number 11,942,516
- Issue date Mar 26, 2024
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 11,929,429
- Issue date Mar 12, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor devices having a silicided polysi...
- Patent number 11,923,446
- Issue date Mar 5, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures with air gap isolation features
- Patent number 11,881,506
- Issue date Jan 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor having conductive plate on passiv...
- Patent number 11,855,174
- Issue date Dec 26, 2023
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with controllable resistance
- Patent number 11,855,149
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Yulong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT)
- Patent number 11,843,046
- Issue date Dec 12, 2023
- United Microelectronics Corp.
- Huai-Tzu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including high electron mobility transistor or...
- Patent number 11,830,940
- Issue date Nov 28, 2023
- GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20250006831
- Publication date Jan 2, 2025
- Vanguard International Semiconductor Corporation
- Cheng-Wei CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIER...
- Publication number 20240379834
- Publication date Nov 14, 2024
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUASI FIELD-PLATE STRUCTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20240363697
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-An Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Biofet and Biometric Sensors
- Publication number 20240331439
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Hui LIN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HEMT DEVICE HAVING IMPROVED ON-STATE PERFORMANCE AND MANUFACTURING...
- Publication number 20240304710
- Publication date Sep 12, 2024
- STMicroelectronics International N.V.
- Cristina TRINGALI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING A POLYMER SUPPORT LAYER
- Publication number 20240243014
- Publication date Jul 18, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Gordon M. Grivna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A FIELD PLATE HAVING A RECESSED REGION AN...
- Publication number 20240222443
- Publication date Jul 4, 2024
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240222437
- Publication date Jul 4, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSTRUCTURE TRANSISTOR GATE WITH DIFFUSION BARRIER
- Publication number 20240178278
- Publication date May 30, 2024
- NXP USA, Inc.
- Jie Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240178296
- Publication date May 30, 2024
- Dynax Semiconductor, Inc.
- Qifeng LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20240162340
- Publication date May 16, 2024
- Fujitsu Limited
- Yusuke KUMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240128351
- Publication date Apr 18, 2024
- Mitsubishi Electric Corporation
- Hiroyuki OKAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE
- Publication number 20240113051
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre Blin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME
- Publication number 20240097004
- Publication date Mar 21, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRALOW NOISE TRANSISTOR AMPLIFIERS VIA IMPROVED QUANTUM CONFINEMENT
- Publication number 20240088283
- Publication date Mar 14, 2024
- California Institute of Technology
- Austin Minnich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL ALUMINUM GALLIUM NITRIDE DEVICES ON CRYSTALLINE METALLIC S...
- Publication number 20240088259
- Publication date Mar 14, 2024
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- Marshall Brooks TELLEKAMP
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME
- Publication number 20240072153
- Publication date Feb 29, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...
- Publication number 20240038882
- Publication date Feb 1, 2024
- GLOBALFOUNDRIES U.S. Inc.
- VIBHOR JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER STRUCTURES INCLUDING TWO-DIMENSIONAL CHANNEL LAYER, METHODS O...
- Publication number 20240038845
- Publication date Feb 1, 2024
- Samsung Electronics Co., Ltd.
- Minseok YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...
- Publication number 20240038881
- Publication date Feb 1, 2024
- GLOBALFOUNDRIES U.S. Inc.
- VIBHOR JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20230369482
- Publication date Nov 16, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE HAVING INTEGRATED MICROCHANNELS
- Publication number 20230369045
- Publication date Nov 16, 2023
- Palo Alto Research Center Incorporated
- Thomas Wunderer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20230369478
- Publication date Nov 16, 2023
- National Tsing Hua University
- Po-Wen CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME AND SEAL RING ST...
- Publication number 20230361056
- Publication date Nov 9, 2023
- HUNAN SAN'AN SEMICONDUCTOR CO., LTD.
- Kechuang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Transistors and Assemblies Comprising Ferroelectric T...
- Publication number 20230327019
- Publication date Oct 12, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH CONTROLLABLE RESISTANCE
- Publication number 20230268396
- Publication date Aug 24, 2023
- International Business Machines Corporation
- Yulong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE HEMT AND MANUFACTURING PROCESS OF THE SAME
- Publication number 20230246100
- Publication date Aug 3, 2023
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME
- Publication number 20230238445
- Publication date Jul 27, 2023
- UNITED MICROELECTRONICS CORP.
- Ko-Wei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230215939
- Publication date Jul 6, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ziming DU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ON INSULATOR ON WIDE BAND-GAP SEMICONDUCTOR
- Publication number 20230178649
- Publication date Jun 8, 2023
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS

with a heterojunction interface channel or gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Multi-channel transistor

High-electron-mobility transistor device and method of manufacturin...

Gallium nitride transistor with a doped region

High electron mobility transistor and method of forming the same

Semiconductor device that includes a conductive member and an elect...

Gallium Nitride high-electron mobility transistors with p-type laye...

High hole mobility transistor (HHMT) and method of manufacturing th...

Apparatuses including multiple channel materials within a tier stack

Semiconductor device and manufacturing method thereof

Semiconductor IC device including passivation layer for inactivatin...

Semiconductor structure, HEMT structure and method of forming the same

Threshold adjustment for quantum dot array devices with metal sourc...

Enhancement-mode N-channel and P-channel GaN device integration str...

High electron mobility transistor and method for forming the same

Field effect transistor with controllable resistance

Semiconductor on insulator on wide band-gap semiconductor

Method for manufacturing nitride-based high electron mobility trans...

Flexible transistors with near-junction heat dissipation

Plurality of stacked transistors attached by solder balls

Semiconductor package having a chip carrier with a pad offset feature

Semiconductor device with multichannel heterostructure and manufact...

Process of forming an electronic device including a polymer support...

Quantum dot devices with overlapping gates

Nitride-based semiconductor device and method for manufacturing the...

High electron mobility transistor devices having a silicided polysi...

Gate structures with air gap isolation features

High electron mobility transistor having conductive plate on passiv...

Field effect transistor with controllable resistance

High electron mobility transistor (HEMT)

Semiconductor device including high electron mobility transistor or...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIER...

QUASI FIELD-PLATE STRUCTURE FOR SEMICONDUCTOR DEVICES

Semiconductor Device with Biofet and Biometric Sensors

HEMT DEVICE HAVING IMPROVED ON-STATE PERFORMANCE AND MANUFACTURING...

ELECTRONIC DEVICE INCLUDING A POLYMER SUPPORT LAYER

SEMICONDUCTOR DEVICE WITH A FIELD PLATE HAVING A RECESSED REGION AN...

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

HETEROSTRUCTURE TRANSISTOR GATE WITH DIFFUSION BARRIER

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME

ULTRALOW NOISE TRANSISTOR AMPLIFIERS VIA IMPROVED QUANTUM CONFINEMENT

VERTICAL ALUMINUM GALLIUM NITRIDE DEVICES ON CRYSTALLINE METALLIC S...

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...

LAYER STRUCTURES INCLUDING TWO-DIMENSIONAL CHANNEL LAYER, METHODS O...

HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

EPITAXIAL STRUCTURE HAVING INTEGRATED MICROCHANNELS

TWO-DIMENSIONAL SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME AND SEAL RING ST...

Ferroelectric Transistors and Assemblies Comprising Ferroelectric T...

FIELD EFFECT TRANSISTOR WITH CONTROLLABLE RESISTANCE

ENHANCEMENT-MODE HEMT AND MANUFACTURING PROCESS OF THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR ON INSULATOR ON WIDE BAND-GAP SEMICONDUCTOR