with a lateral structure

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H01L29/4983

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/4983with a lateral structure

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing semiconductor devices having gate spacers...
- Patent number 12,218,216
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming FinFET devices with a fin top hardmask
- Patent number 12,211,921
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having highly integrated NMOS and PMOS t...
- Patent number 12,211,847
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Jaehoon Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor device with a gate structure having...
- Patent number 12,176,407
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor device with gate spacer structure
- Patent number 12,148,813
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure having a gate contact above a metal gate and strad...
- Patent number 12,148,834
- Issue date Nov 19, 2024
- Huawei Technologies Co., Ltd.
- Xinfang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method of forming the same
- Patent number 12,136,657
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, and method for protecting low-k dielectric fe...
- Patent number 12,136,660
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate spacers extending below a fin top...
- Patent number 12,125,891
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with multi-level self-aligned gate and source/drain term...
- Patent number 12,119,383
- Issue date Oct 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,107,135
- Issue date Oct 1, 2024
- Samsung Electronics Co., Ltd.
- Jung Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Densified gate spacers and formation thereof
- Patent number 12,107,145
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-En Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain epitaxial structures for semiconductor devices
- Patent number 12,100,626
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous silicon-based scavenging and sealing EOT
- Patent number 12,100,595
- Issue date Sep 24, 2024
- Applied Materials, Inc.
- Yong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Butted contacts and methods of fabricating the same in semiconducto...
- Patent number 12,094,942
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping structures in semiconductor devices
- Patent number 12,094,951
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping layer for gate electrodes
- Patent number 12,080,779
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chin-Hsiang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structures and method of forming
- Patent number 12,074,071
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transistor by tilted implant...
- Patent number 12,062,707
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with inner spacer liner layer and method
- Patent number 12,051,736
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsung-Han Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device including capping la...
- Patent number 12,046,657
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including gate structures with gate spacers
- Patent number 12,034,056
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with controllable resistance
- Patent number 12,015,056
- Issue date Jun 18, 2024
- International Business Machines Corporation
- Yulong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field-effect transistor device and method of forming
- Patent number 12,009,407
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with metal cap layer and method for manufac...
- Patent number 12,009,403
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RFSOI semiconductor structures including a nitrogen-doped charge-tr...
- Patent number 11,984,477
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of nano-sheet transistors with different threshold volt...
- Patent number RE49954
- Issue date Apr 30, 2024
- TESSERA LLC
- Karthik Balakrishnan
Information Patent Grant
Method for fabricating semiconductor device with sidewall oxidized...
- Patent number 11,955,564
- Issue date Apr 9, 2024
- NANYA TECHNOLOGY CORPORATION
- Te-Yin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including buried gate structure and method for...
- Patent number 11,943,912
- Issue date Mar 26, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20250040230
- Publication date Jan 30, 2025
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Jiajun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Publication number 20250022936
- Publication date Jan 16, 2025
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSIFIED GATE SPACERS AND FORMATION THEREOF
- Publication number 20240395898
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-En CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, AND METHOD FOR PROTECTING LOW-K DIELECTRIC FE...
- Publication number 20240395901
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ming LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTO...
- Publication number 20240387658
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240387681
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240387680
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE
- Publication number 20240387697
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE
- Publication number 20240379789
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Structures and Method of Forming
- Publication number 20240363443
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20240363721
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chin CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20240363437
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOW CONCENTRATION OPPOSITE TYPE DOPING DR...
- Publication number 20240363720
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING LAYER FOR GUIDE ELECTRODES
- Publication number 20240363726
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Hsiang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SPACERS AND MANUFACTURING METHOD THEREOF
- Publication number 20240355898
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH INNER SPACER LINER LAYER AND METHOD
- Publication number 20240355908
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Han CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FIN FIN-TYPE FIELD EFFECT TRANSISTOR WITH FINE-TUNED EFFECTIV...
- Publication number 20240347638
- Publication date Oct 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240322043
- Publication date Sep 26, 2024
- POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
- WOOYEOL MAENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20240297237
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MOSFET AND SEMICONDUCTOR DEVICE
- Publication number 20240290784
- Publication date Aug 29, 2024
- Rohm Co., Ltd.
- Takeshi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...
- Publication number 20240274659
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING A GATE SETBACK FROM A GATE DIELECTRIC
- Publication number 20240258373
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Yuan Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240258399
- Publication date Aug 1, 2024
- Samsung Electronics Co., Ltd.
- Chaeho Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240250150
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Liang Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS
- Publication number 20240243202
- Publication date Jul 18, 2024
- Intel Corporation
- Ritesh K. DAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC LAYER STACK FOR WIDE GATE CUT STRUCTURES
- Publication number 20240203739
- Publication date Jun 20, 2024
- Intel Corporation
- Swapnadip Ghosh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ENERGY-REMOVABLE LAYER
- Publication number 20240178288
- Publication date May 30, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ENERGY-REMOVABLE LAYER AND METHOD FOR FAB...
- Publication number 20240178287
- Publication date May 30, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240162333
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS

with a lateral structure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for manufacturing semiconductor devices having gate spacers...

Method for forming FinFET devices with a fin top hardmask

Integrated circuit devices having highly integrated NMOS and PMOS t...

Method of forming a transistor device with a gate structure having...

Semiconductor device with fin transistors and manufacturing method...

Field-effect transistor device with gate spacer structure

FinFET structure having a gate contact above a metal gate and strad...

Field-effect transistor and method of forming the same

Semiconductor device, and method for protecting low-k dielectric fe...

Semiconductor device having gate spacers extending below a fin top...

Transistor with multi-level self-aligned gate and source/drain term...

Semiconductor device

Densified gate spacers and formation thereof

Source/drain epitaxial structures for semiconductor devices

Amorphous silicon-based scavenging and sealing EOT

Butted contacts and methods of fabricating the same in semiconducto...

Capping structures in semiconductor devices

Capping layer for gate electrodes

Source/drain structures and method of forming

Method of manufacturing a field effect transistor by tilted implant...

Field effect transistor with inner spacer liner layer and method

Method of manufacturing a semiconductor device including capping la...

Semiconductor devices including gate structures with gate spacers

Field effect transistor with controllable resistance

Nanosheet field-effect transistor device and method of forming

Semiconductor structure with metal cap layer and method for manufac...

RFSOI semiconductor structures including a nitrogen-doped charge-tr...

Fabrication of nano-sheet transistors with different threshold volt...

Method for fabricating semiconductor device with sidewall oxidized...

Semiconductor device including buried gate structure and method for...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP

DENSIFIED GATE SPACERS AND FORMATION THEREOF

SEMICONDUCTOR DEVICE, AND METHOD FOR PROTECTING LOW-K DIELECTRIC FE...

BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTO...

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

SEMICONDUCTOR DEVICES

Source/Drain Structures and Method of Forming

CAPPING STRUCTURES IN SEMICONDUCTOR DEVICES

SOURCE/DRAIN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE WITH LOW CONCENTRATION OPPOSITE TYPE DOPING DR...

CAPPING LAYER FOR GUIDE ELECTRODES

FIELD EFFECT TRANSISTOR WITH SPACERS AND MANUFACTURING METHOD THEREOF

FIELD EFFECT TRANSISTOR WITH INNER SPACER LINER LAYER AND METHOD

MULTI-FIN FIN-TYPE FIELD EFFECT TRANSISTOR WITH FINE-TUNED EFFECTIV...

INTEGRATED CIRCUIT DEVICE

NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

ENHANCEMENT MOSFET AND SEMICONDUCTOR DEVICE

RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...

TRANSISTOR DEVICE HAVING A GATE SETBACK FROM A GATE DIELECTRIC

INTEGRATED CIRCUIT DEVICE

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS

DIELECTRIC LAYER STACK FOR WIDE GATE CUT STRUCTURES

SEMICONDUCTOR DEVICE WITH ENERGY-REMOVABLE LAYER

SEMICONDUCTOR DEVICE WITH ENERGY-REMOVABLE LAYER AND METHOD FOR FAB...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE