with a non-uniform doping structure in the channel region surface

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CPC
H01L29/1041

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/1041with a non-uniform doping structure in the channel region surface

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and method for manufacturing same
- Patent number 12,114,485
- Issue date Oct 8, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Qinghua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device
- Patent number 12,114,502
- Issue date Oct 8, 2024
- Kioxia Corporation
- Hiroshi Kanno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage FET
- Patent number 12,100,734
- Issue date Sep 24, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of dopant deactivation underneath gate
- Patent number 12,068,374
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional power device and method for manufacturing the same
- Patent number 12,021,128
- Issue date Jun 25, 2024
- Hangzhou Silan Microelectronics Co., Ltd.
- Shaohua Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device
- Patent number 11,990,474
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Fang Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid field-effect transistor
- Patent number 11,984,479
- Issue date May 14, 2024
- Analog Devices International Unlimited Company
- Dennis A. Dempsey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors (FETs) employing edge transistor current l...
- Patent number 11,948,978
- Issue date Apr 2, 2024
- QUALCOMM Incorporated
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of p-channel and n-channel E-FET III-V devices with opt...
- Patent number 11,824,109
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cascode amplifier optimization
- Patent number 11,742,408
- Issue date Aug 29, 2023
- Skyworks Solutions, Inc.
- Yun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 11,728,388
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Keunhwi Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device
- Patent number 11,723,204
- Issue date Aug 8, 2023
- Kioxia Corporation
- Hiroshi Kanno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and display driver IC using the same
- Patent number 11,699,375
- Issue date Jul 11, 2023
- Samsung Electronics Co., Ltd.
- Hiroki Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical power MOSFET with channel including regions with di...
- Patent number 11,626,514
- Issue date Apr 11, 2023
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit structure and method for reducing electronic noises
- Patent number 11,605,709
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ching-Hung Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high voltage transistors
- Patent number 11,575,009
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Sungkweon Baek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device, semiconductor device and r...
- Patent number 11,552,076
- Issue date Jan 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Fang Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of manufacturing the same
- Patent number 11,538,907
- Issue date Dec 27, 2022
- Kioxia Corporation
- Masakazu Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,527,645
- Issue date Dec 13, 2022
- Kioxia Corporation
- Tadayoshi Uechi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of p-channel and n-channel E-FET III-V devices with opt...
- Patent number 11,522,077
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage FET
- Patent number 11,469,296
- Issue date Oct 11, 2022
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing
- Patent number 11,462,614
- Issue date Oct 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and formation thereof
- Patent number 11,404,284
- Issue date Aug 2, 2022
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming doped channel thereof
- Patent number 11,404,577
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solar cell and solar cell module
- Patent number 11,398,574
- Issue date Jul 26, 2022
- Panasonic Holdings Corporation
- Kazunori Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanopore FET sensor with non-linear potential profile
- Patent number 11,367,797
- Issue date Jun 21, 2022
- Imec VZW
- Chang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,282,928
- Issue date Mar 22, 2022
- Samsung Electronics Co., Ltd.
- Keunhwi Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor device structure and method for forming...
- Patent number 11,257,932
- Issue date Feb 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ta-Chun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,251,300
- Issue date Feb 15, 2022
- Nissan Motor Co., Ltd.
- Wei Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate semiconductor with non-uniform trench oxide
- Patent number 11,189,702
- Issue date Nov 30, 2021
- Vishay SIliconix, LLC
- M. Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20240371940
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240290858
- Publication date Aug 29, 2024
- HANGZHOU SILAN MICROELECTRONICS CO., LTD.
- Shaohua Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR FOR REDUCING HOT CARRIER DAMAGE AND METHODS...
- Publication number 20240274716
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Hsin Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELONGATED CONTACT FOR SOURCE OR DRAIN REGION
- Publication number 20240213324
- Publication date Jun 27, 2024
- Intel Corporation
- Tuhin Guha Neogi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240204093
- Publication date Jun 20, 2024
- Sony Semiconductor Solutions Corporation
- SHINYA MORITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME,...
- Publication number 20240186379
- Publication date Jun 6, 2024
- BOE TECHNOLOGY GROUP CO., LTD.
- Hehe Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240038846
- Publication date Feb 1, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240038874
- Publication date Feb 1, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Yi-Kai HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE WITH IMPLANTED NANOSHEETS
- Publication number 20230411480
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhi-Ren XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPT...
- Publication number 20230387281
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE
- Publication number 20230387209
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon-Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transi...
- Publication number 20230327018
- Publication date Oct 12, 2023
- Hong Kong Applied Science and Technology Research Institute Company Limited
- Shu Kin YAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20230328992
- Publication date Oct 12, 2023
- KIOXIA Corporation
- Hiroshi KANNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230307519
- Publication date Sep 28, 2023
- Kabushiki Kaisha Toshiba
- Hiroshi KONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230207687
- Publication date Jun 29, 2023
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR DEVICE
- Publication number 20230163125
- Publication date May 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu Fang FU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR STRUC...
- Publication number 20230119755
- Publication date Apr 20, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Qing LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOOPED LONG CHANNEL FIELD-EFFECT TRANSISTOR
- Publication number 20230101235
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Leakage FET
- Publication number 20230094494
- Publication date Mar 30, 2023
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE
- Publication number 20230011246
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR AND METHOD FOR THE FORMATION THEREOF
- Publication number 20220416028
- Publication date Dec 29, 2022
- ROBERT BOSCH GmbH
- Jens Baringhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Manufacturing
- Publication number 20220384572
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- B82 - NANO-TECHNOLOGY
Information Patent Application
INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPT...
- Publication number 20220359738
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING HIGH WITHSTAND VOLTAGE AND HIGH ELECTRON MOBILITY...
- Publication number 20220302292
- Publication date Sep 22, 2022
- GUANGDONG ZHINENG TECHNOLOGY CO., LTD.
- Zilan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors And Arrays Of Elevationally-Extending Strings Of Memory...
- Publication number 20220271127
- Publication date Aug 25, 2022
- Micron Technology, Inc.
- Ramanathan Gandhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID FIELD-EFFECT TRANSISTOR
- Publication number 20220262904
- Publication date Aug 18, 2022
- Analog Devices International Unlimited Company
- Dennis A. Dempsey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20220231047
- Publication date Jul 21, 2022
- KIOXIA Corporation
- Hiroshi KANNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20220208970
- Publication date Jun 30, 2022
- Samsung Electronics Co., Ltd.
- Keunhwi CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220199794
- Publication date Jun 23, 2022
- HANGZHOU SILAN MICROELECTRONICS CO., LTD.
- Shaohua Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR DEVICE STRUCTURE
- Publication number 20220165869
- Publication date May 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun MA
- H01 - BASIC ELECTRIC ELEMENTS

with a non-uniform doping structure in the channel region surface

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure and method for manufacturing same

Semiconductor storage device

Low leakage FET

Method of dopant deactivation underneath gate

Bidirectional power device and method for manufacturing the same

Method of making a semiconductor device

Hybrid field-effect transistor

Field-effect transistors (FETs) employing edge transistor current l...

Integration of p-channel and n-channel E-FET III-V devices with opt...

Cascode amplifier optimization

Method for manufacturing a semiconductor device

Semiconductor storage device

Semiconductor device and display driver IC using the same

Trench vertical power MOSFET with channel including regions with di...

Circuit structure and method for reducing electronic noises

Semiconductor device having high voltage transistors

Method of making a semiconductor device, semiconductor device and r...

Semiconductor memory device and method of manufacturing the same

Semiconductor device

Integration of p-channel and n-channel E-FET III-V devices with opt...

Low leakage FET

Semiconductor devices and methods of manufacturing

Semiconductor device and formation thereof

Semiconductor device and method of forming doped channel thereof

Solar cell and solar cell module

Nanopore FET sensor with non-linear potential profile

Semiconductor devices

Fin field effect transistor device structure and method for forming...

Semiconductor device and method of manufacturing semiconductor device

Split gate semiconductor with non-uniform trench oxide

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE

BIDIRECTIONAL POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME

FIELD EFFECT TRANSISTOR FOR REDUCING HOT CARRIER DAMAGE AND METHODS...

ELONGATED CONTACT FOR SOURCE OR DRAIN REGION

SEMICONDUCTOR DEVICE

METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME,...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

METHOD OF FORMING SEMICONDUCTOR DEVICE WITH IMPLANTED NANOSHEETS

INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPT...

INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE

Silicon-Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transi...

SEMICONDUCTOR STORAGE DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

METHOD OF MAKING A SEMICONDUCTOR DEVICE

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR STRUC...

LOOPED LONG CHANNEL FIELD-EFFECT TRANSISTOR

Low Leakage FET

INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE

VERTICAL FIELD EFFECT TRANSISTOR AND METHOD FOR THE FORMATION THEREOF

Semiconductor Devices and Methods of Manufacturing

INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPT...

TRANSISTOR HAVING HIGH WITHSTAND VOLTAGE AND HIGH ELECTRON MOBILITY...

Transistors And Arrays Of Elevationally-Extending Strings Of Memory...

HYBRID FIELD-EFFECT TRANSISTOR

SEMICONDUCTOR STORAGE DEVICE

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

BIDIRECTIONAL POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME

FIN FIELD EFFECT TRANSISTOR DEVICE STRUCTURE