with an insulating layer with a particular dielectric or electrostatic property

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CPC
H01L29/408

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/408with an insulating layer with a particular dielectric or electrostatic property

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,183,734
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Sang Min Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor and method for manufacturing the same
- Patent number 12,166,091
- Issue date Dec 10, 2024
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Meng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with equipotential ring electrode
- Patent number 12,159,865
- Issue date Dec 3, 2024
- Rohm Co., Ltd.
- Hiroyuki Kaneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gates with layers for transistor threshold voltage tuning and...
- Patent number 12,154,964
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- An-Hung Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a metal silicate film on a substrate in a react...
- Patent number 12,094,936
- Issue date Sep 17, 2024
- ASM IP Holding B.V.
- Fu Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Electronic device
- Patent number 12,089,421
- Issue date Sep 10, 2024
- SK hynix Inc.
- Gwang Hyuk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,080,765
- Issue date Sep 3, 2024
- Kabushiki Kaisha Toshiba
- Aya Shindome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor with field plating
- Patent number 12,074,216
- Issue date Aug 27, 2024
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including two-dimensional semiconductor material
- Patent number 12,062,697
- Issue date Aug 13, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 12,051,698
- Issue date Jul 30, 2024
- Intel Corporation
- Daniel G. Ouellette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate trench field plate vertical MOSFET
- Patent number 12,034,074
- Issue date Jul 9, 2024
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,021,122
- Issue date Jun 25, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type dipole for P-FET
- Patent number 11,996,455
- Issue date May 28, 2024
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruggedized symmetrically bidirectional bipolar power transistor
- Patent number 11,978,788
- Issue date May 7, 2024
- Ideal Power Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tiled lateral BJT
- Patent number 11,973,112
- Issue date Apr 30, 2024
- Silanna Asia Pte Ltd
- Vadim Kushner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-dimensional NAND flash memory device, method of fabricating the s...
- Patent number 11,956,963
- Issue date Apr 9, 2024
- SK Hynix Inc.
- Woo Young Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 11,955,522
- Issue date Apr 9, 2024
- Vanguard International Semiconductor Corporation
- Cheng-Wei Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming conductive pipes between neighboring features, a...
- Patent number 11,948,984
- Issue date Apr 2, 2024
- Micron Technology, Inc.
- Ahmed Nayaz Noemaun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating high electron mobility transistor
- Patent number 11,929,407
- Issue date Mar 12, 2024
- Vanguard International Semiconductor Corporation
- Ting-En Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Percolation doping of inorganic-organic frameworks for multiple dev...
- Patent number 11,915,926
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Leonidas Ernesto Ocola
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Graphene varactor including ferroelectric material
- Patent number 11,908,901
- Issue date Feb 20, 2024
- Regents of The University of Minnesota
- Steven J. Koester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device including a doped gate electrode
- Patent number 11,908,916
- Issue date Feb 20, 2024
- SK HYNIX SYSTEM IC INC.
- Soon Yeol Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,901,421
- Issue date Feb 13, 2024
- Samsung Electronics Co., Ltd.
- Hokyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with fixed negative charge plug
- Patent number 11,894,431
- Issue date Feb 6, 2024
- SK hynix Inc.
- Dae Hwan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and methods of manufacturing the same
- Patent number 11,888,038
- Issue date Jan 30, 2024
- Samsung Electronics Co., Ltd.
- Joonyoung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device and method for fabricating the same
- Patent number 11,871,571
- Issue date Jan 9, 2024
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having field plate
- Patent number 11,862,691
- Issue date Jan 2, 2024
- Raytheon Company
- Michael S. Davis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, and method for manufacturing semiconductor de...
- Patent number 11,862,672
- Issue date Jan 2, 2024
- Rohm Co., Ltd.
- Katsuhisa Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure having a gate structure and overlyin...
- Patent number 11,855,158
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hong-Shyang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming thin semiconductor-on-insulator (SOI) substrates
- Patent number 11,855,159
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE DEVICE
- Publication number 20250006814
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Wolfgang LEHNERT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATES AND METHODS OF FORMING THE SAME
- Publication number 20240387682
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- An-Hung Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240387649
- Publication date Nov 21, 2024
- RENESAS ELECTRONICS CORPORATION
- Kodai OZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240371766
- Publication date Nov 7, 2024
- Sumitomo Electric Industries, Ltd.
- Kosuke UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-CONDUCTING EDGE TERMINATION STRUCTURES FOR A SEMICONDUCTOR DEVI...
- Publication number 20240363683
- Publication date Oct 31, 2024
- IDEAL SEMICONDUCTOR DEVICES, INC.
- David Jauregui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL
- Publication number 20240363689
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240355892
- Publication date Oct 24, 2024
- Rohm Co., Ltd.
- Yasunobu HAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240322043
- Publication date Sep 26, 2024
- POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
- WOOYEOL MAENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240304683
- Publication date Sep 12, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET
- Publication number 20240304719
- Publication date Sep 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Marie DENISON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240304699
- Publication date Sep 12, 2024
- Samsung Electronics Co., Ltd.
- Junyoung KWON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electric Field Modification for Nitrogen-Polar Group III-Nitride Se...
- Publication number 20240290847
- Publication date Aug 29, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH DEFECT MITIGATION STRUCTURES
- Publication number 20240266406
- Publication date Aug 8, 2024
- NXP USA, Inc.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU DEPOSITION OF OXIDE PASSIVATION LAYER ON III-NITRIDE BASED...
- Publication number 20240258403
- Publication date Aug 1, 2024
- University of South Carolina
- Iftikhar Ahmad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Conductive Pipes Between Neighboring Features, a...
- Publication number 20240250132
- Publication date Jul 25, 2024
- Micron Technology, Inc.
- Ahmed Nayaz Noemaun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N DEVICE WITH PLANARIZED TOPOLOGICAL STRUCTURE
- Publication number 20240213333
- Publication date Jun 27, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Fuchao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND HIGH ELECTRON MOBILITY TRANSI...
- Publication number 20240213334
- Publication date Jun 27, 2024
- HiPer Semiconductor Inc.
- YAN LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REGULATED MOBILE ION SYNAPSES
- Publication number 20240186386
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Jin Ping Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20240178285
- Publication date May 30, 2024
- Vanguard International Semiconductor Corporation
- Yi-Wei Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER...
- Publication number 20240178284
- Publication date May 30, 2024
- International Business Machines Corporation
- Jennifer Toy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240164103
- Publication date May 16, 2024
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240162307
- Publication date May 16, 2024
- Samsung Electronics Co., Ltd.
- Hokyun AN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240155840
- Publication date May 9, 2024
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240154008
- Publication date May 9, 2024
- Industrial Technology Research Institute
- Chih-Hung Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240128330
- Publication date Apr 18, 2024
- Samsung Electronics Co., Ltd.
- Joonyoung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240096974
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Takuya YASUTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
- Publication number 20240096975
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HONG-SHYANG WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240088214
- Publication date Mar 14, 2024
- Fuji Electric Co., Ltd.
- Koh Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...
- Publication number 20240087897
- Publication date Mar 14, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240088238
- Publication date Mar 14, 2024
- RENESAS ELECTRONICS CORPORATION
- Satoru TOKUDA
- H01 - BASIC ELECTRIC ELEMENTS

with an insulating layer with a particular dielectric or electrostatic property

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method for fabricating the same

LDMOS transistor and method for manufacturing the same

Semiconductor device with equipotential ring electrode

Metal gates with layers for transistor threshold voltage tuning and...

Methods for forming a metal silicate film on a substrate in a react...

Electronic device

Semiconductor device

Fin field effect transistor with field plating

Semiconductor device including two-dimensional semiconductor material

Fabrication of gate-all-around integrated circuit structures having...

Trench gate trench field plate vertical MOSFET

Semiconductor device and manufacturing method thereof

P-type dipole for P-FET

Ruggedized symmetrically bidirectional bipolar power transistor

Tiled lateral BJT

3-dimensional NAND flash memory device, method of fabricating the s...

Semiconductor structure and method of forming the same

Methods of forming conductive pipes between neighboring features, a...

Method of fabricating high electron mobility transistor

Percolation doping of inorganic-organic frameworks for multiple dev...

Graphene varactor including ferroelectric material

High voltage semiconductor device including a doped gate electrode

Semiconductor devices

Memory device with fixed negative charge plug

Integrated circuit devices and methods of manufacturing the same

Nonvolatile memory device and method for fabricating the same

Field effect transistor having field plate

Semiconductor device, and method for manufacturing semiconductor de...

Semiconductor device structure having a gate structure and overlyin...

Method for forming thin semiconductor-on-insulator (SOI) substrates

Patents Applicationslast 30 patents

SILICON CARBIDE DEVICE

METAL GATES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

NON-CONDUCTING EDGE TERMINATION STRUCTURES FOR A SEMICONDUCTOR DEVI...

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT DEVICE

SEMICONDUCTOR DEVICE

TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Electric Field Modification for Nitrogen-Polar Group III-Nitride Se...

TRANSISTOR WITH DEFECT MITIGATION STRUCTURES

IN-SITU DEPOSITION OF OXIDE PASSIVATION LAYER ON III-NITRIDE BASED...

Methods of Forming Conductive Pipes Between Neighboring Features, a...

III-N DEVICE WITH PLANARIZED TOPOLOGICAL STRUCTURE

HIGH ELECTRON MOBILITY TRANSISTOR AND HIGH ELECTRON MOBILITY TRANSI...

REGULATED MOBILE ION SYNAPSES

HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF

SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER...

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICES

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...

SEMICONDUCTOR DEVICE