with delta-doped channel

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H01L29/7725

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7725with delta-doped channel

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Patents Grantslast 30 patents

Information Patent Grant
Quantum doping method and use in fabrication of nanoscale electroni...
- Patent number 10,510,876
- Issue date Dec 17, 2019
- Anatoly Feygenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond based current aperture vertical transistor and methods of m...
- Patent number 10,418,475
- Issue date Sep 17, 2019
- Arizona Board of Regents on behalf of Arizona State University
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep slope field-effect transistor (FET) for a perpendicular magne...
- Patent number 10,355,046
- Issue date Jul 16, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Steep slope field-effect transistor (FET) for a perpendicular magne...
- Patent number 10,243,021
- Issue date Mar 26, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum doping method and use in fabrication of nanoscale electroni...
- Patent number 9,870,925
- Issue date Jan 16, 2018
- Anatoly Feygenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 7,507,999
- Issue date Mar 24, 2009
- Panasonic Corporation
- Osamu Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor heterostructure MOSFET device
- Patent number 7,432,565
- Issue date Oct 7, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making a III-V compound semiconductor heterostructure MO...
- Patent number 7,429,506
- Issue date Sep 30, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,995,397
- Issue date Feb 7, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kenya Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Equipment for communication system and semiconductor integrated cir...
- Patent number 6,940,127
- Issue date Sep 6, 2005
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MISFET
- Patent number 6,864,507
- Issue date Mar 8, 2005
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device for high-temperature applications
- Patent number 6,674,131
- Issue date Jan 6, 2004
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Equipment for communication system
- Patent number 6,654,604
- Issue date Nov 25, 2003
- Matsushita Electric Industrial Co. Ltd.
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MISFET
- Patent number 6,617,653
- Issue date Sep 9, 2003
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device having epitaxial channel la...
- Patent number 6,380,013
- Issue date Apr 30, 2002
- Hyundai Electronics Industries Co., Ltd.
- Jung-Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with monoatomic base layer between emitter and c...
- Patent number 5,373,186
- Issue date Dec 13, 1994
- Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
- Erdmann Schubert
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor photodetector devices with pairs of monoatomic layers...
- Patent number 5,329,150
- Issue date Jul 12, 1994
- Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
- Erdmann Schubert
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making high transconductance heterostructure field effect...
- Patent number 5,298,441
- Issue date Mar 29, 1994
- Motorola, Inc.
- Herbert Goronkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optically bistable semiconductor device with pairs of monoatomic la...
- Patent number 5,216,260
- Issue date Jun 1, 1993
- Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
- Erdmann Schubert
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing an MOS transistor
- Patent number 5,212,104
- Issue date May 18, 1993
- Siemens Aktiengesellschaft
- Helmut Klose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 5,206,527
- Issue date Apr 27, 1993
- Sumitomo Electric Industries, Ltd.
- Nobuhiro Kuwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar-doped valley field effect transistor (PDVFET)
- Patent number 5,151,758
- Issue date Sep 29, 1992
- Comsat
- Thane Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Step-cut insulated gate static induction transistors and method of...
- Patent number 5,115,287
- Issue date May 19, 1992
- Research Development Corporation of Japan
- Junichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Injection laser with at least one pair of monoatomic layers of dopi...
- Patent number 5,060,234
- Issue date Oct 22, 1991
- Max Planck Gesellschaft zur Forderung der Wissenschaften
- Erdmann Schubert
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Atomic planar-doped field-effect transistor
- Patent number 4,980,731
- Issue date Dec 25, 1990
- NEC Corporation
- Hikaru Hida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor field-effect transistor
- Patent number 4,942,438
- Issue date Jul 17, 1990
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with at least one monoatomic layer of doping...
- Patent number 4,882,609
- Issue date Nov 21, 1989
- Max-Planck-Gesellschaft zur Forderung der Wissenschafter e.V.
- Erdmann Schubert
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
LACING SYSTEM WITH GUIDE ELEMENTS
- Publication number 20220022602
- Publication date Jan 27, 2022
- NIKE, Inc.
- Tiffany A. Beers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LACING SYSTEM WITH GUIDE ELEMENTS
- Publication number 20210265423
- Publication date Aug 26, 2021
- NIKE, Inc.
- Tiffany A. Beers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Quantum Doping Method and Use in Fabrication of Nanoscale Electroni...
- Publication number 20180174842
- Publication date Jun 21, 2018
- Anatoly Feygenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V compound semiconductor heterostructure MOSFET device
- Publication number 20070069240
- Publication date Mar 29, 2007
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process of making a III-V compound semiconductor heterostructure MO...
- Publication number 20070072377
- Publication date Mar 29, 2007
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including a superlattice having at least one g...
- Publication number 20050279991
- Publication date Dec 22, 2005
- RJ Mears, LLC.
- Robert J. Mears
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device and method for manufacturing same
- Publication number 20050173739
- Publication date Aug 11, 2005
- Osamu Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040051104
- Publication date Mar 18, 2004
- Kenya Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Equipment for communication system and semiconductor integrated cir...
- Publication number 20040022025
- Publication date Feb 5, 2004
- Toshiya Yokogawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MISFET
- Publication number 20030227061
- Publication date Dec 11, 2003
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20030006415
- Publication date Jan 9, 2003
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Equipment for communication system and semiconductor integrated cir...
- Publication number 20020060315
- Publication date May 23, 2002
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming semiconductor device having epitaxial channel la...
- Publication number 20020001890
- Publication date Jan 3, 2002
- Jung-Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020000570
- Publication date Jan 3, 2002
- Shigeru Nakajima
- H01 - BASIC ELECTRIC ELEMENTS

with delta-doped channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Quantum doping method and use in fabrication of nanoscale electroni...

Diamond based current aperture vertical transistor and methods of m...

Steep slope field-effect transistor (FET) for a perpendicular magne...

Steep slope field-effect transistor (FET) for a perpendicular magne...

Quantum doping method and use in fabrication of nanoscale electroni...

Semiconductor device and method for manufacturing same

III-V compound semiconductor heterostructure MOSFET device

Process of making a III-V compound semiconductor heterostructure MO...

Semiconductor device

Equipment for communication system and semiconductor integrated cir...

MISFET

Semiconductor power device for high-temperature applications

Equipment for communication system

MISFET

Method for forming semiconductor device having epitaxial channel la...

Bipolar transistor with monoatomic base layer between emitter and c...

Semiconductor photodetector devices with pairs of monoatomic layers...

Method of making high transconductance heterostructure field effect...

Optically bistable semiconductor device with pairs of monoatomic la...

Method for manufacturing an MOS transistor

Field effect transistor

Planar-doped valley field effect transistor (PDVFET)

Step-cut insulated gate static induction transistors and method of...

Injection laser with at least one pair of monoatomic layers of dopi...

Atomic planar-doped field-effect transistor

Compound semiconductor field-effect transistor

Semiconductor devices with at least one monoatomic layer of doping...

Patents Applicationslast 30 patents

LACING SYSTEM WITH GUIDE ELEMENTS

LACING SYSTEM WITH GUIDE ELEMENTS

Quantum Doping Method and Use in Fabrication of Nanoscale Electroni...

III-V compound semiconductor heterostructure MOSFET device

Process of making a III-V compound semiconductor heterostructure MO...

Semiconductor device including a superlattice having at least one g...

Semiconductor device and method for manufacturing same

Semiconductor device

Equipment for communication system and semiconductor integrated cir...

MISFET

Semiconductor device

Equipment for communication system and semiconductor integrated cir...

Method for forming semiconductor device having epitaxial channel la...

Semiconductor device