3211589

Information

• Patent Grant
• 3211589

• References
• Source

• Patent Number

  3,211,589

• Date Filed

  Not available

• Date Issued

  Tuesday, October 12, 1965
  59 years ago

• CPC

  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • C30B31/06 - by contacting with diffusion material in the gaseous state
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L29/207 - further characterised by the doping material
  • Y10S148/002 - Amphoteric doping
  • Y10S148/107 - Melt
  • Y10S438/914 - Doping
  • Y10S438/971 - Stoichiometric control of host substrate composition

• US Classifications

  • 438 - Semiconductor device manufacturing: process