3237062

Information

• Patent Grant
• 3237062

• References
• Source

• Patent Number

  3,237,062

• Date Filed

  Not available

• Date Issued

  Tuesday, February 22, 1966
  58 years ago

• CPC

  • H01L27/0755 - Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02381 - Silicon, silicon germanium, germanium
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • H01L21/74 - Making of localized buried regions
  • H01L21/76 - Making of isolation regions between components
  • Y10S148/007 - Autodoping
  • Y10S148/036 - Diffusion, nonselective
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/051 - Etching
  • Y10S148/085 - Isolated-integrated
  • Y10S148/151 - Simultaneous diffusion

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment
  • 438 - Semiconductor device manufacturing: process