3417248

Information

• Patent Grant
• 3417248

• References
• Source

• Patent Number

  3,417,248

• Date Filed

  Not available

• Date Issued

  Tuesday, December 17, 1968
  56 years ago

• CPC

  • H01L33/00 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/24 - Alloying of impurity materials
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L29/02 - Semiconductor bodies; Multistep manufacturing processes therefor
  • H01L29/68 - controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/88 - Tunnel-effect diodes
  • H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof
  • H01L31/16 - the semiconductor device sensitive to radiation being controlled by the light source or sources
  • H03K17/58 - using tunnel diodes

• US Classifications

  • 250 - Radiant energy
  • 257 - Active solid-state devices