3424629

Information

• Patent Grant
• 3424629

• References
• Source

• Patent Number

  3,424,629

• Date Filed

  Not available

• Date Issued

  Tuesday, January 28, 1969
  56 years ago

• CPC

  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • C23C16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating
  • C30B23/00 - Single-crystal growth by condensing evaporated or sublimed material
  • C30B25/08 - Reaction chambers Selection of material therefor
  • C30B28/08 - by zone-melting
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/02576 - N-type
  • H01L21/0262 - Reduction or decomposition of gaseous compounds

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 118 - Coating apparatus
  • 427 - Coating processes