Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating


  • CPC
  • C23C16/00
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Sub Industries

C23C16/003Coating on a liquid substrate C23C16/006characterized by the colour of the layer C23C16/01on temporary substrates C23C16/02Pretreatment of the material to be coated C23C16/0209by heating C23C16/0218in a reactive atmosphere C23C16/0227by cleaning or etching C23C16/0236by etching with a reactive gas C23C16/0245by etching with a plasma C23C16/0254Physical treatment to alter the texture of the surface C23C16/0263Irradiation with laser or particle beam C23C16/0272Deposition of sub-layers C23C16/0281of metallic sub-layers C23C16/029Graded interfaces C23C16/04Coating on selected surface areas C23C16/042using masks C23C16/045Coating cavities or hollow spaces C23C16/047using irradiation by energy or particles C23C16/06characterised by the deposition of metallic material C23C16/08from metal halides C23C16/10Deposition of chromium only C23C16/12Deposition of aluminium only C23C16/14Deposition of only one other metal element C23C16/16from metal carbonyl compounds C23C16/18from metallo-organic compounds C23C16/20Deposition of aluminium only C23C16/22characterised by the deposition of inorganic material, other than metallic material C23C16/24Deposition of silicon only C23C16/26Deposition of carbon only C23C16/27Diamond only C23C16/271using hot filaments C23C16/272using DC, AC or RF discharges C23C16/274using microwave discharges C23C16/275using combustion torches C23C16/276using plasma jets C23C16/277using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets C23C16/278doping or introduction of a secondary phase in the diamond C23C16/279control of diamond crystallography C23C16/28Deposition of only one other non-metal element C23C16/30Deposition of compounds, mixtures or solid solutions C23C16/301AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi C23C16/303Nitrides C23C16/305Sulfides, selenides, or tellurides C23C16/306AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te C23C16/308Oxynitrides C23C16/32Carbides C23C16/325Silicon carbide C23C16/34Nitrides C23C16/342Boron nitride C23C16/345Silicon nitride C23C16/347Carbon nitride C23C16/36Carbonitrides C23C16/38Borides C23C16/40Oxides C23C16/401containing silicon C23C16/402Silicon dioxide C23C16/403of aluminium, magnesium or beryllium C23C16/404of alkaline earth metals C23C16/405of refractory metals or yttrium C23C16/406of iron group metals C23C16/407of zinc, germanium, cadmium, indium, tin, thallium or bismuth C23C16/408of copper or solid solutions thereof C23C16/409of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide C23C16/42Silicides C23C16/44characterised by the method of coating C23C16/4401Means for minimising impurities C23C16/4402Reduction of impurities in the source gas C23C16/4404Coatings or surface treatment on the inside of the reaction chamber or on parts thereof C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases C23C16/4407Cleaning of reactor or reactor parts by using wet or mechanical methods C23C16/4408by purging residual gases from the reaction chamber or gas lines C23C16/4409characterised by sealing means C23C16/4411Cooling of the reaction chamber walls C23C16/4412Details relating to the exhausts C23C16/4414Electrochemical vapour deposition [EVD] C23C16/4415Acoustic wave CVD C23C16/4417Methods specially adapted for coating powder C23C16/4418Methods for making free-standing articles C23C16/442using fluidised bed process C23C16/448characterised by the method used for generating reactive gas streams C23C16/4481by evaporation using carrier gas in contact with the source material C23C16/4482by bubbling of carrier gas through liquid source material C23C16/4483using a porous body C23C16/4485by evaporation without using carrier gas in contact with the source material C23C16/4486by producing an aerosol and subsequent evaporation of the droplets or particles C23C16/4487by using a condenser C23C16/4488by in situ generation of reactive gas by chemical or electrochemical reaction C23C16/452by activating reactive gas streams before their introduction into the reaction chamber C23C16/453passing the reaction gases through burners or torches C23C16/455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber C23C16/45502Flow conditions in reaction chamber C23C16/45504Laminar flow C23C16/45506Turbulent flow C23C16/45508Radial flow C23C16/4551Jet streams C23C16/45512Premixing before introduction in the reaction chamber C23C16/45514Mixing in close vicinity to the substrate C23C16/45517Confinement of gases to vicinity of substrate C23C16/45519Inert gas curtains C23C16/45521the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery C23C16/45523Pulsed gas flow or change of composition over time C23C16/45525Atomic layer deposition [ALD] C23C16/45527characterized by the ALD cycle C23C16/45529specially adapted for making a layer stack of alternating different compositions or gradient compositions C23C16/45531specially adapted for making ternary or higher compositions C23C16/45534Use of auxiliary reactants other than used for contributing to the composition of the main film C23C16/45536Use of plasma, radiation or electromagnetic fields C23C16/45538Plasma being used continuously during the ALD cycle C23C16/4554Plasma being used non-continuously in between ALD reactions C23C16/45542Plasma being used non-continuously during the ALD reactions C23C16/45544characterized by the apparatus C23C16/45546specially adapted for a substrate stack in the ALD reactor C23C16/45548having arrangements for gas injection at different locations of the reactor for each ALD half-reaction C23C16/45551for relative movement of the substrate and the gas injectors or half-reaction reactor compartments C23C16/45553characterized by the use of precursors specially adapted for ALD C23C16/45555applied in non-semiconductor technology C23C16/45557Pulsed pressure or control pressure C23C16/45559Diffusion of reactive gas to substrate C23C16/45561Gas plumbing upstream of the reaction chamber C23C16/45563Gas nozzles C23C16/45565Shower nozzles C23C16/45568Porous nozzles C23C16/4557Heated nozzles C23C16/45572Cooled nozzles C23C16/45574Nozzles for more than one gas C23C16/45576Coaxial inlets for each gas C23C16/45578Elongated nozzles, tubes with holes C23C16/4558Perforated rings C23C16/45582Expansion of gas before it reaches the substrate C23C16/45585Compression of gas before it reaches the substrate C23C16/45587Mechanical means for changing the gas flow C23C16/45589Movable means C23C16/45591Fixed means C23C16/45593Recirculation of reactive gases C23C16/45595Atmospheric CVD gas inlets with no enclosed reaction chamber C23C16/45597Reactive back side gas C23C16/458characterised by the method used for supporting substrates in the reaction chamber C23C16/4581characterised by material of construction or surface finish of the means for supporting the substrate C23C16/4582Rigid and flat substrates C23C16/4583the substrate being supported substantially horizontally C23C16/4584the substrate being rotated C23C16/4585Devices at or outside the perimeter of the substrate support C23C16/4586Elements in the interior of the support C23C16/4587the substrate being supported substantially vertically C23C16/4588the substrate being rotated C23C16/46characterised by the method used for heating the substrate C23C16/463Cooling of the substrate C23C16/466using thermal contact gas C23C16/48by irradiation C23C16/481by radiant heating of the substrate C23C16/482using incoherent light, UV to IR C23C16/483using coherent light, UV to IR C23C16/484using X-ray radiation C23C16/485using synchrotron radiation C23C16/486using ion beam radiation C23C16/487using electron radiation C23C16/488Protection of windows for introduction of radiation into the coating chamber C23C16/50using electric discharges C23C16/503using dc or ac discharges C23C16/505using radio frequency discharges C23C16/507using external electrodes C23C16/509using internal electrodes C23C16/5093Coaxial electrodes C23C16/5096Flat-bed apparatus C23C16/511using microwave discharges C23C16/513using plasma jets C23C16/515using pulsed discharges C23C16/517using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515 C23C16/52Controlling or regulating the coating process C23C16/54Apparatus specially adapted for continuous coating C23C16/545for coating elongated substrates C23C16/56After-treatment