Industry
-
CPC
-
C23C16/00
This industry / category may be too specific. Please go to a parent level for more data
Sub Industries
C23C16/003Coating on a liquid substrate
C23C16/006characterized by the colour of the layer
C23C16/01on temporary substrates
C23C16/02Pretreatment of the material to be coated
C23C16/0209by heating
C23C16/0218in a reactive atmosphere
C23C16/0227by cleaning or etching
C23C16/0236by etching with a reactive gas
C23C16/0245by etching with a plasma
C23C16/0254Physical treatment to alter the texture of the surface
C23C16/0263Irradiation with laser or particle beam
C23C16/0272Deposition of sub-layers
C23C16/0281of metallic sub-layers
C23C16/029Graded interfaces
C23C16/04Coating on selected surface areas
C23C16/042using masks
C23C16/045Coating cavities or hollow spaces
C23C16/047using irradiation by energy or particles
C23C16/06characterised by the deposition of metallic material
C23C16/08from metal halides
C23C16/10Deposition of chromium only
C23C16/12Deposition of aluminium only
C23C16/14Deposition of only one other metal element
C23C16/16from metal carbonyl compounds
C23C16/18from metallo-organic compounds
C23C16/20Deposition of aluminium only
C23C16/22characterised by the deposition of inorganic material, other than metallic material
C23C16/24Deposition of silicon only
C23C16/26Deposition of carbon only
C23C16/27Diamond only
C23C16/271using hot filaments
C23C16/272using DC, AC or RF discharges
C23C16/274using microwave discharges
C23C16/275using combustion torches
C23C16/276using plasma jets
C23C16/277using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
C23C16/278doping or introduction of a secondary phase in the diamond
C23C16/279control of diamond crystallography
C23C16/28Deposition of only one other non-metal element
C23C16/30Deposition of compounds, mixtures or solid solutions
C23C16/301AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
C23C16/303Nitrides
C23C16/305Sulfides, selenides, or tellurides
C23C16/306AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
C23C16/308Oxynitrides
C23C16/32Carbides
C23C16/325Silicon carbide
C23C16/34Nitrides
C23C16/342Boron nitride
C23C16/345Silicon nitride
C23C16/347Carbon nitride
C23C16/36Carbonitrides
C23C16/38Borides
C23C16/40Oxides
C23C16/401containing silicon
C23C16/402Silicon dioxide
C23C16/403of aluminium, magnesium or beryllium
C23C16/404of alkaline earth metals
C23C16/405of refractory metals or yttrium
C23C16/406of iron group metals
C23C16/407of zinc, germanium, cadmium, indium, tin, thallium or bismuth
C23C16/408of copper or solid solutions thereof
C23C16/409of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
C23C16/42Silicides
C23C16/44characterised by the method of coating
C23C16/4401Means for minimising impurities
C23C16/4402Reduction of impurities in the source gas
C23C16/4404Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases
C23C16/4407Cleaning of reactor or reactor parts by using wet or mechanical methods
C23C16/4408by purging residual gases from the reaction chamber or gas lines
C23C16/4409characterised by sealing means
C23C16/4411Cooling of the reaction chamber walls
C23C16/4412Details relating to the exhausts
C23C16/4414Electrochemical vapour deposition [EVD]
C23C16/4415Acoustic wave CVD
C23C16/4417Methods specially adapted for coating powder
C23C16/4418Methods for making free-standing articles
C23C16/442using fluidised bed process
C23C16/448characterised by the method used for generating reactive gas streams
C23C16/4481by evaporation using carrier gas in contact with the source material
C23C16/4482by bubbling of carrier gas through liquid source material
C23C16/4483using a porous body
C23C16/4485by evaporation without using carrier gas in contact with the source material
C23C16/4486by producing an aerosol and subsequent evaporation of the droplets or particles
C23C16/4487by using a condenser
C23C16/4488by in situ generation of reactive gas by chemical or electrochemical reaction
C23C16/452by activating reactive gas streams before their introduction into the reaction chamber
C23C16/453passing the reaction gases through burners or torches
C23C16/455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
C23C16/45502Flow conditions in reaction chamber
C23C16/45504Laminar flow
C23C16/45506Turbulent flow
C23C16/45508Radial flow
C23C16/4551Jet streams
C23C16/45512Premixing before introduction in the reaction chamber
C23C16/45514Mixing in close vicinity to the substrate
C23C16/45517Confinement of gases to vicinity of substrate
C23C16/45519Inert gas curtains
C23C16/45521the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
C23C16/45523Pulsed gas flow or change of composition over time
C23C16/45525Atomic layer deposition [ALD]
C23C16/45527characterized by the ALD cycle
C23C16/45529specially adapted for making a layer stack of alternating different compositions or gradient compositions
C23C16/45531specially adapted for making ternary or higher compositions
C23C16/45534Use of auxiliary reactants other than used for contributing to the composition of the main film
C23C16/45536Use of plasma, radiation or electromagnetic fields
C23C16/45538Plasma being used continuously during the ALD cycle
C23C16/4554Plasma being used non-continuously in between ALD reactions
C23C16/45542Plasma being used non-continuously during the ALD reactions
C23C16/45544characterized by the apparatus
C23C16/45546specially adapted for a substrate stack in the ALD reactor
C23C16/45548having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
C23C16/45551for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
C23C16/45553characterized by the use of precursors specially adapted for ALD
C23C16/45555applied in non-semiconductor technology
C23C16/45557Pulsed pressure or control pressure
C23C16/45559Diffusion of reactive gas to substrate
C23C16/45561Gas plumbing upstream of the reaction chamber
C23C16/45563Gas nozzles
C23C16/45565Shower nozzles
C23C16/45568Porous nozzles
C23C16/4557Heated nozzles
C23C16/45572Cooled nozzles
C23C16/45574Nozzles for more than one gas
C23C16/45576Coaxial inlets for each gas
C23C16/45578Elongated nozzles, tubes with holes
C23C16/4558Perforated rings
C23C16/45582Expansion of gas before it reaches the substrate
C23C16/45585Compression of gas before it reaches the substrate
C23C16/45587Mechanical means for changing the gas flow
C23C16/45589Movable means
C23C16/45591Fixed means
C23C16/45593Recirculation of reactive gases
C23C16/45595Atmospheric CVD gas inlets with no enclosed reaction chamber
C23C16/45597Reactive back side gas
C23C16/458characterised by the method used for supporting substrates in the reaction chamber
C23C16/4581characterised by material of construction or surface finish of the means for supporting the substrate
C23C16/4582Rigid and flat substrates
C23C16/4583the substrate being supported substantially horizontally
C23C16/4584the substrate being rotated
C23C16/4585Devices at or outside the perimeter of the substrate support
C23C16/4586Elements in the interior of the support
C23C16/4587the substrate being supported substantially vertically
C23C16/4588the substrate being rotated
C23C16/46characterised by the method used for heating the substrate
C23C16/463Cooling of the substrate
C23C16/466using thermal contact gas
C23C16/48by irradiation
C23C16/481by radiant heating of the substrate
C23C16/482using incoherent light, UV to IR
C23C16/483using coherent light, UV to IR
C23C16/484using X-ray radiation
C23C16/485using synchrotron radiation
C23C16/486using ion beam radiation
C23C16/487using electron radiation
C23C16/488Protection of windows for introduction of radiation into the coating chamber
C23C16/50using electric discharges
C23C16/503using dc or ac discharges
C23C16/505using radio frequency discharges
C23C16/507using external electrodes
C23C16/509using internal electrodes
C23C16/5093Coaxial electrodes
C23C16/5096Flat-bed apparatus
C23C16/511using microwave discharges
C23C16/513using plasma jets
C23C16/515using pulsed discharges
C23C16/517using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
C23C16/52Controlling or regulating the coating process
C23C16/54Apparatus specially adapted for continuous coating
C23C16/545for coating elongated substrates
C23C16/56After-treatment