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Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating
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CPC
C23C16/00
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Parent Industries
C
CHEMISTRY METALLURGY
C23
Surface treatment
C23C
COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
Current Industry
C23C16/00
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating
Sub Industries
C23C16/003
Coating on a liquid substrate
C23C16/006
characterized by the colour of the layer
C23C16/01
on temporary substrates
C23C16/02
Pretreatment of the material to be coated
C23C16/0209
by heating
C23C16/0218
in a reactive atmosphere
C23C16/0227
by cleaning or etching
C23C16/0236
by etching with a reactive gas
C23C16/0245
by etching with a plasma
C23C16/0254
Physical treatment to alter the texture of the surface
C23C16/0263
Irradiation with laser or particle beam
C23C16/0272
Deposition of sub-layers
C23C16/0281
of metallic sub-layers
C23C16/029
Graded interfaces
C23C16/04
Coating on selected surface areas
C23C16/042
using masks
C23C16/045
Coating cavities or hollow spaces
C23C16/047
using irradiation by energy or particles
C23C16/06
characterised by the deposition of metallic material
C23C16/08
from metal halides
C23C16/10
Deposition of chromium only
C23C16/12
Deposition of aluminium only
C23C16/14
Deposition of only one other metal element
C23C16/16
from metal carbonyl compounds
C23C16/18
from metallo-organic compounds
C23C16/20
Deposition of aluminium only
C23C16/22
characterised by the deposition of inorganic material, other than metallic material
C23C16/24
Deposition of silicon only
C23C16/26
Deposition of carbon only
C23C16/27
Diamond only
C23C16/271
using hot filaments
C23C16/272
using DC, AC or RF discharges
C23C16/274
using microwave discharges
C23C16/275
using combustion torches
C23C16/276
using plasma jets
C23C16/277
using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
C23C16/278
doping or introduction of a secondary phase in the diamond
C23C16/279
control of diamond crystallography
C23C16/28
Deposition of only one other non-metal element
C23C16/30
Deposition of compounds, mixtures or solid solutions
C23C16/301
AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
C23C16/303
Nitrides
C23C16/305
Sulfides, selenides, or tellurides
C23C16/306
AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
C23C16/308
Oxynitrides
C23C16/32
Carbides
C23C16/325
Silicon carbide
C23C16/34
Nitrides
C23C16/342
Boron nitride
C23C16/345
Silicon nitride
C23C16/347
Carbon nitride
C23C16/36
Carbonitrides
C23C16/38
Borides
C23C16/40
Oxides
C23C16/401
containing silicon
C23C16/402
Silicon dioxide
C23C16/403
of aluminium, magnesium or beryllium
C23C16/404
of alkaline earth metals
C23C16/405
of refractory metals or yttrium
C23C16/406
of iron group metals
C23C16/407
of zinc, germanium, cadmium, indium, tin, thallium or bismuth
C23C16/408
of copper or solid solutions thereof
C23C16/409
of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
C23C16/42
Silicides
C23C16/44
characterised by the method of coating
C23C16/4401
Means for minimising impurities
C23C16/4402
Reduction of impurities in the source gas
C23C16/4404
Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
C23C16/4405
Cleaning of reactor or parts inside the reactor by using reactive gases
C23C16/4407
Cleaning of reactor or reactor parts by using wet or mechanical methods
C23C16/4408
by purging residual gases from the reaction chamber or gas lines
C23C16/4409
characterised by sealing means
C23C16/4411
Cooling of the reaction chamber walls
C23C16/4412
Details relating to the exhausts
C23C16/4414
Electrochemical vapour deposition [EVD]
C23C16/4415
Acoustic wave CVD
C23C16/4417
Methods specially adapted for coating powder
C23C16/4418
Methods for making free-standing articles
C23C16/442
using fluidised bed process
C23C16/448
characterised by the method used for generating reactive gas streams
C23C16/4481
by evaporation using carrier gas in contact with the source material
C23C16/4482
by bubbling of carrier gas through liquid source material
C23C16/4483
using a porous body
C23C16/4485
by evaporation without using carrier gas in contact with the source material
C23C16/4486
by producing an aerosol and subsequent evaporation of the droplets or particles
C23C16/4487
by using a condenser
C23C16/4488
by in situ generation of reactive gas by chemical or electrochemical reaction
C23C16/452
by activating reactive gas streams before their introduction into the reaction chamber
C23C16/453
passing the reaction gases through burners or torches
C23C16/455
characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
C23C16/45502
Flow conditions in reaction chamber
C23C16/45504
Laminar flow
C23C16/45506
Turbulent flow
C23C16/45508
Radial flow
C23C16/4551
Jet streams
C23C16/45512
Premixing before introduction in the reaction chamber
C23C16/45514
Mixing in close vicinity to the substrate
C23C16/45517
Confinement of gases to vicinity of substrate
C23C16/45519
Inert gas curtains
C23C16/45521
the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
C23C16/45523
Pulsed gas flow or change of composition over time
C23C16/45525
Atomic layer deposition [ALD]
C23C16/45527
characterized by the ALD cycle
C23C16/45529
specially adapted for making a layer stack of alternating different compositions or gradient compositions
C23C16/45531
specially adapted for making ternary or higher compositions
C23C16/45534
Use of auxiliary reactants other than used for contributing to the composition of the main film
C23C16/45536
Use of plasma, radiation or electromagnetic fields
C23C16/45538
Plasma being used continuously during the ALD cycle
C23C16/4554
Plasma being used non-continuously in between ALD reactions
C23C16/45542
Plasma being used non-continuously during the ALD reactions
C23C16/45544
characterized by the apparatus
C23C16/45546
specially adapted for a substrate stack in the ALD reactor
C23C16/45548
having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
C23C16/45551
for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
C23C16/45553
characterized by the use of precursors specially adapted for ALD
C23C16/45555
applied in non-semiconductor technology
C23C16/45557
Pulsed pressure or control pressure
C23C16/45559
Diffusion of reactive gas to substrate
C23C16/45561
Gas plumbing upstream of the reaction chamber
C23C16/45563
Gas nozzles
C23C16/45565
Shower nozzles
C23C16/45568
Porous nozzles
C23C16/4557
Heated nozzles
C23C16/45572
Cooled nozzles
C23C16/45574
Nozzles for more than one gas
C23C16/45576
Coaxial inlets for each gas
C23C16/45578
Elongated nozzles, tubes with holes
C23C16/4558
Perforated rings
C23C16/45582
Expansion of gas before it reaches the substrate
C23C16/45585
Compression of gas before it reaches the substrate
C23C16/45587
Mechanical means for changing the gas flow
C23C16/45589
Movable means
C23C16/45591
Fixed means
C23C16/45593
Recirculation of reactive gases
C23C16/45595
Atmospheric CVD gas inlets with no enclosed reaction chamber
C23C16/45597
Reactive back side gas
C23C16/458
characterised by the method used for supporting substrates in the reaction chamber
C23C16/4581
characterised by material of construction or surface finish of the means for supporting the substrate
C23C16/4582
Rigid and flat substrates
C23C16/4583
the substrate being supported substantially horizontally
C23C16/4584
the substrate being rotated
C23C16/4585
Devices at or outside the perimeter of the substrate support
C23C16/4586
Elements in the interior of the support
C23C16/4587
the substrate being supported substantially vertically
C23C16/4588
the substrate being rotated
C23C16/46
characterised by the method used for heating the substrate
C23C16/463
Cooling of the substrate
C23C16/466
using thermal contact gas
C23C16/48
by irradiation
C23C16/481
by radiant heating of the substrate
C23C16/482
using incoherent light, UV to IR
C23C16/483
using coherent light, UV to IR
C23C16/484
using X-ray radiation
C23C16/485
using synchrotron radiation
C23C16/486
using ion beam radiation
C23C16/487
using electron radiation
C23C16/488
Protection of windows for introduction of radiation into the coating chamber
C23C16/50
using electric discharges
C23C16/503
using dc or ac discharges
C23C16/505
using radio frequency discharges
C23C16/507
using external electrodes
C23C16/509
using internal electrodes
C23C16/5093
Coaxial electrodes
C23C16/5096
Flat-bed apparatus
C23C16/511
using microwave discharges
C23C16/513
using plasma jets
C23C16/515
using pulsed discharges
C23C16/517
using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
C23C16/52
Controlling or regulating the coating process
C23C16/54
Apparatus specially adapted for continuous coating
C23C16/545
for coating elongated substrates
C23C16/56
After-treatment
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Issue date
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Issue date
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Issue date
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Issue date
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Publication date
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Publication date
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Publication number
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Publication date
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Publication date
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Publication number
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Publication date
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H01 - BASIC ELECTRIC ELEMENTS
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Publication number
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Publication date
May 22, 2025
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C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Publication number
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Publication date
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B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
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Publication number
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Publication date
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H01 - BASIC ELECTRIC ELEMENTS
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Publication number
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Publication date
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G05 - CONTROLLING REGULATING
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Publication number
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Publication date
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Publication number
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Publication date
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G01 - MEASURING TESTING
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Publication number
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Publication date
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C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Publication number
20250163580
Publication date
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C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Publication number
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Publication date
May 22, 2025
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C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Publication number
20250163571
Publication date
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C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Publication number
20250163578
Publication date
May 22, 2025
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Hanhong Chen
H01 - BASIC ELECTRIC ELEMENTS
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Publication number
20250167013
Publication date
May 22, 2025
ASM IP HOLDING B.V.
Tom E. Blomberg
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Publication number
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Publication date
May 22, 2025
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Ajit Dhamdhere
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Publication number
20250154642
Publication date
May 15, 2025
AUO Corporation
Shu-Hui Chen
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Patent Application
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Publication number
20250154645
Publication date
May 15, 2025
Tokyo Electron Limited
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