3433684

Information

• Patent Grant
• 3433684

• References
• Source

• Patent Number

  3,433,684

• Date Filed

  Not available

• Date Issued

  Tuesday, March 18, 1969
  55 years ago

• CPC

  • H01S5/30 - Structure or shape of the active region Materials used for the active region
  • C09J111/00 - Adhesives based on homopolymers or copolymers of chloroprene
  • C09J113/00 - Adhesives based on rubbers containing carboxyl groups
  • C09J123/22 - Copolymers of isobutene Butyl rubber Homo- or copolymers of other iso-olefines
  • C09J161/06 - of aldehydes with phenols
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L33/00 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof
  • C08L13/00 - Compositions of rubbers containing carboxyl groups
  • C08L45/00 - Compositions of homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic ring system Compositions of derivatives of such polymers
  • Y10S148/018 - Compensation doping
  • Y10S148/02 - Contacts, special
  • Y10S148/048 - Energy beam assisted EPI growth
  • Y10S148/049 - Equivalence and options
  • Y10S148/052 - Face to face deposition
  • Y10S148/059 - Germanium on silicon or Ge-Si on III-V
  • Y10S148/067 - Graded energy gap
  • Y10S148/072 - Heterojunctions
  • Y10S148/142 - Semiconductor-metal-semiconductor
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S438/967 - Semiconductor on specified insulator

• US Classifications

  • 148 - Metal treatment
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 257 - Active solid-state devices
  • 427 - Coating processes
  • 438 - Semiconductor device manufacturing: process