3494809

Information

• Patent Grant
• 3494809

• References
• Source

• Patent Number

  3,494,809

• Date Filed

  Not available

• Date Issued

  Tuesday, February 10, 1970
  55 years ago

• CPC

  • H01L21/3185 - of siliconnitrides
  • H01L21/033 - comprising inorganic layers
  • H01L21/82 - to produce devices
  • Y10S148/007 - Autodoping
  • Y10S148/017 - Clean surfaces
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/043 - Dual dielectric
  • Y10S148/05 - Etch and refill
  • Y10S148/052 - Face to face deposition
  • Y10S148/085 - Isolated-integrated
  • Y10S148/114 - Nitrides of silicon

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices