3585087

Information

• Patent Grant
• 3585087

• References
• Source

• Patent Number

  3,585,087

• Date Filed

  Not available

• Date Issued

  Tuesday, June 15, 1971
  53 years ago

• CPC

  • C30B15/007 - Pulling on a substrate
  • H01L21/02392 - Phosphides
  • H01L21/02543 - Phosphides
  • H01L21/02576 - N-type
  • H01L21/02579 - P-type
  • H01L21/02581 - Transition metal or rare earth elements
  • H01L21/02625 - using melted materials
  • H01L33/00 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof
  • Y10S148/107 - Melt
  • Y10S148/119 - Phosphides of gallium or indium
  • Y10S148/134 - Remelt
  • Y10S438/919 - Compensation doping

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 023 - Chemistry: physical processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 257 - Active solid-state devices
  • 438 - Semiconductor device manufacturing: process