3586542

Information

• Patent Grant
• 3586542

• References
• Source

• Patent Number

  3,586,542

• Date Filed

  Not available

• Date Issued

  Tuesday, June 22, 1971
  53 years ago

• CPC

  • H01L23/482 - consisting of lead-in layers inseparably applied to the semiconductor body
  • F23Q9/02 - without interlock with main fuel supply
  • H01J37/3171 - for ion implantation
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L23/29 - characterised by the material
  • H01L23/291 - Oxides or nitrides or carbides
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
  • Y10S148/085 - Isolated-integrated
  • Y10S148/106 - Masks, special
  • Y10S148/139 - Schottky barrier

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices