3661637

Information

• Patent Grant
• 3661637

• References
• Source

• Patent Number

  3,661,637

• Date Filed

  Not available

• Date Issued

  Tuesday, May 9, 1972
  52 years ago

• CPC

  • C30B29/06 - Silicon
  • C01B33/02 - Silicon
  • C23C16/481 - by radiant heating of the substrate
  • C23C16/482 - using incoherent light, UV to IR
  • C30B25/02 - Epitaxial-layer growth
  • Y10S117/904 - Laser beam
  • Y10S148/007 - Autodoping
  • Y10S148/017 - Clean surfaces
  • Y10S148/027 - Dichlorosilane
  • Y10S148/049 - Equivalence and options
  • Y10S148/051 - Etching
  • Y10S148/071 - Heating, selective

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 065 - Glass manufacturing
  • 148 - Metal treatment
  • 427 - Coating processes