3694276

Information

• Patent Grant
• 3694276

• References
• Source

• Patent Number

  3,694,276

• Date Filed

  Not available

• Date Issued

  Tuesday, September 26, 1972
  52 years ago

• CPC

  • H01L27/0652 - Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/76 - Making of isolation regions between components
  • H01L21/763 - Polycristalline semiconductor regions
  • H01L21/8222 - Bipolar technology
  • H01L27/0635 - in combination with bipolar transistors and diodes, or resistors, or capacitors
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/062 - Gold diffusion
  • Y10S148/085 - Isolated-integrated
  • Y10S148/122 - Polycrystalline
  • Y10S438/917 - Deep level dopants
  • Y10S438/922 - Diffusion along grain boundaries
  • Y10S438/969 - Simultaneous formation of monocrystalline and polycrystalline regions

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices