Deep level dopants

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CPC
Y10S438/917

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

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Y10S438/917Deep level dopants

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Patents Grantslast 30 patents

Information Patent Grant
Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...
- Patent number 9,887,510
- Issue date Feb 6, 2018
- The UAB Research Foundation
- Sergey B. Mirov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optically controlled silicon carbide and related wide-bandgap trans...
- Patent number 8,853,710
- Issue date Oct 7, 2014
- Power Integrations, Inc.
- Michael S. Mazzola
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Optically controlled silicon carbide and related wide-bandgap trans...
- Patent number 8,455,328
- Issue date Jun 4, 2013
- Power Integrations, Inc.
- Michael S. Mazzola
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Optically controlled silicon carbide and related wide-bandgap trans...
- Patent number 8,193,537
- Issue date Jun 5, 2012
- SS SC IP, LLC
- Michael S. Mazzola
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Thermally programmable anti-reverse engineering interconnects where...
- Patent number 7,843,062
- Issue date Nov 30, 2010
- International Business Machines Corporation
- Fen Chen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of making thermally programmable anti-reverse engineering in...
- Patent number 7,709,401
- Issue date May 4, 2010
- International Business Machines Corporation
- Fen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...
- Patent number 7,548,571
- Issue date Jun 16, 2009
- The UAB Research Foundation
- Sergey B. Mirov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide and related wide-bandgap transistors on semi-insula...
- Patent number 7,432,171
- Issue date Oct 7, 2008
- Mississippi State University Research and Technology Corporation (RTC)
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing apparatus for modifying-in-film stress...
- Patent number 7,358,554
- Issue date Apr 15, 2008
- Micron Technology, Inc.
- Cem Basceri
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of production of nano particle dispersed composite material
- Patent number 7,041,530
- Issue date May 9, 2006
- Matsushita Electric Industrial Co., Ltd.
- Masahiro Nunoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide and related wide-bandgap transistors on semi-insula...
- Patent number 7,009,209
- Issue date Mar 7, 2006
- Mississippi State University Research and Technology Corporation (RTC)
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...
- Patent number 6,960,486
- Issue date Nov 1, 2005
- University of Alabama at Brimingham Research Foundation
- Sergey B. Mirov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing process and apparatus for modifying in-...
- Patent number 6,884,718
- Issue date Apr 26, 2005
- Micron Technology, Inc.
- Cem Basceri
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,878,579
- Issue date Apr 12, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,791,106
- Issue date Sep 14, 2004
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having multiple power/ground connections to a si...
- Patent number 6,747,352
- Issue date Jun 8, 2004
- Amkor Technology, Inc.
- Ronald Patrick Huemoeller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive implant structure in a dielectric
- Patent number 6,495,919
- Issue date Dec 17, 2002
- Micron Technology, Inc.
- Paul A. Farrar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implanted conductor and methods of making
- Patent number 6,432,844
- Issue date Aug 13, 2002
- Micron Technology, Inc.
- Paul A. Farrar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive implant structure in a dielectric
- Patent number 6,262,486
- Issue date Jul 17, 2001
- Micron Technology, Inc.
- Paul A. Farrar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implanted conductor and methods of making
- Patent number 6,017,829
- Issue date Jan 25, 2000
- Micron Technology, Inc.
- Paul A. Farrar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suppression of boron segregation for shallow source and drain junct...
- Patent number 5,960,322
- Issue date Sep 28, 1999
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor device including high resistivity layer
- Patent number 5,679,603
- Issue date Oct 21, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Tatsuya Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS latchup suppression by localized minority carrier lifetime red...
- Patent number 5,441,900
- Issue date Aug 15, 1995
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS latchup suppression by localized minority carrier lifetime red...
- Patent number 5,384,477
- Issue date Jan 24, 1995
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT device with platinum lifetime control having gradient or profi...
- Patent number 5,283,202
- Issue date Feb 1, 1994
- Advanced Power Technology, Inc.
- Douglas A. Pike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TEOV doping of gallium arsenide
- Patent number 5,252,512
- Issue date Oct 12, 1993
- United Technologies Corporation
- Alexander J. Shuskus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of introduction and diffusion of platinum ions in a slice o...
- Patent number 5,227,315
- Issue date Jul 13, 1993
- Consorzio per la Ricerca Sulla Microelettronica nel Mezzogiorno
- Ferruccio Frisina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT process to produce platinum lifetime control
- Patent number 5,190,885
- Issue date Mar 2, 1993
- Advanced Power Technology, Inc.
- Douglas A. Pike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High frequency MOSCAP
- Patent number 5,060,110
- Issue date Oct 22, 1991
- Motorola, Inc.
- Robert C. Kane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the preparation of mono-crystalline 3-5 semi-insulating...
- Patent number 4,853,077
- Issue date Aug 1, 1989
- Etat Francais
- Bertrand Lambert
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND SYSTEM FOR MUTLILINE MIR-IR LASER
- Publication number 20180175579
- Publication date Jun 21, 2018
- The UAB Research Foundation
- Sergey B. Mirov
- C30 - CRYSTAL GROWTH
Information Patent Application
OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANS...
- Publication number 20130320199
- Publication date Dec 5, 2013
- Power Integrations, Inc.
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MID-IR MICROCHIP LASER: ZNS:CR2+ LASER WITH SATURABLE ABSORBER MATE...
- Publication number 20120224599
- Publication date Sep 6, 2012
- The UAB Research Foundation
- Sergey B. Mirov
- C30 - CRYSTAL GROWTH
Information Patent Application
OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANS...
- Publication number 20120214275
- Publication date Aug 23, 2012
- SS SC IP, LLC
- Michael S. MAZZOLA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
THERMALLY PROGRAMMABLE ANTI-REVERSE ENGINEERING INTERCONNECTS AND M...
- Publication number 20100133691
- Publication date Jun 3, 2010
- International Business Machines Corporation
- Fen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mid-IR Microchip Laser: ZnS:Cr2+ Laser with Saturable Absorber Mate...
- Publication number 20100022049
- Publication date Jan 28, 2010
- The UAB Research Foundation
- Sergey B. Mirov
- C30 - CRYSTAL GROWTH
Information Patent Application
THERMALLY PROGRAMMABLE ANTI-REVERSE ENGINEERING INTERCONNECTS AND M...
- Publication number 20090212431
- Publication date Aug 27, 2009
- Fen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANS...
- Publication number 20070292074
- Publication date Dec 20, 2007
- Michael S. Mazzola
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Silicon Carbide and related wide-bandgap transistors on semi-insula...
- Publication number 20060160316
- Publication date Jul 20, 2006
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...
- Publication number 20050281301
- Publication date Dec 22, 2005
- Sergey B. Mirror
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor manufacturing apparatus for modifying in-film stress...
- Publication number 20050161818
- Publication date Jul 28, 2005
- Cem Basceri
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of production of nano particle dispersed composite material
- Publication number 20050042386
- Publication date Feb 24, 2005
- Masahiro Nunoshita
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20050012088
- Publication date Jan 20, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor manufacturing process and apparatus for modifying in-...
- Publication number 20040195606
- Publication date Oct 7, 2004
- Cem Basceri
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20030201493
- Publication date Oct 30, 2003
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mid-ir microchip laser: ZnS:Cr2+ laser with saturable absorber mate...
- Publication number 20030072340
- Publication date Apr 17, 2003
- Sergey B. Mirov
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide and related wide-bandgap transistors on semi-insula...
- Publication number 20020149021
- Publication date Oct 17, 2002
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductive implant structure in a dielectric
- Publication number 20010045659
- Publication date Nov 29, 2001
- Paul A. Farrar
- H01 - BASIC ELECTRIC ELEMENTS

Deep level dopants

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...

Optically controlled silicon carbide and related wide-bandgap trans...

Optically controlled silicon carbide and related wide-bandgap trans...

Optically controlled silicon carbide and related wide-bandgap trans...

Thermally programmable anti-reverse engineering interconnects where...

Method of making thermally programmable anti-reverse engineering in...

Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...

Silicon carbide and related wide-bandgap transistors on semi-insula...

Semiconductor manufacturing apparatus for modifying-in-film stress...

Method of production of nano particle dispersed composite material

Silicon carbide and related wide-bandgap transistors on semi-insula...

Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...

Semiconductor manufacturing process and apparatus for modifying in-...

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Integrated circuit having multiple power/ground connections to a si...

Conductive implant structure in a dielectric

Implanted conductor and methods of making

Conductive implant structure in a dielectric

Implanted conductor and methods of making

Suppression of boron segregation for shallow source and drain junct...

Method of making semiconductor device including high resistivity layer

CMOS latchup suppression by localized minority carrier lifetime red...

CMOS latchup suppression by localized minority carrier lifetime red...

IGBT device with platinum lifetime control having gradient or profi...

TEOV doping of gallium arsenide

Process of introduction and diffusion of platinum ions in a slice o...

IGBT process to produce platinum lifetime control

High frequency MOSCAP

Process for the preparation of mono-crystalline 3-5 semi-insulating...

Patents Applicationslast 30 patents

METHOD AND SYSTEM FOR MUTLILINE MIR-IR LASER

OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANS...

MID-IR MICROCHIP LASER: ZNS:CR2+ LASER WITH SATURABLE ABSORBER MATE...

OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANS...

THERMALLY PROGRAMMABLE ANTI-REVERSE ENGINEERING INTERCONNECTS AND M...

Mid-IR Microchip Laser: ZnS:Cr2+ Laser with Saturable Absorber Mate...

THERMALLY PROGRAMMABLE ANTI-REVERSE ENGINEERING INTERCONNECTS AND M...

OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANS...

Silicon Carbide and related wide-bandgap transistors on semi-insula...

Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...

Semiconductor manufacturing apparatus for modifying in-film stress...

Method of production of nano particle dispersed composite material

Semiconductor device and method of manufacturing the same

Semiconductor manufacturing process and apparatus for modifying in-...

Semiconductor device and method of manufacturing the same

Mid-ir microchip laser: ZnS:Cr2+ laser with saturable absorber mate...

Silicon carbide and related wide-bandgap transistors on semi-insula...

Conductive implant structure in a dielectric