3769109

Information

• Patent Grant
• 3769109

• References
• Source

• Patent Number

  3,769,109

• Date Filed

  Not available

• Date Issued

  Tuesday, October 30, 1973
  51 years ago

• CPC

  • H01L21/31155 - by ion implantation
  • H01L23/291 - Oxides or nitrides or carbides
  • H01L21/266 - using masks
  • H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
  • Y10S148/02 - Contacts, special
  • Y10S148/041 - Doping control in crystal growth
  • Y10S148/042 - Doping, graded, for tapered etching
  • Y10S148/053 - Field effect transistors fets
  • Y10S148/106 - Masks, special
  • Y10S438/924 - To facilitate selective etching
  • Y10S438/978 - forming tapered edges on substrate or adjacent layers

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 216 - Etching a substrate: processes