3773553

Information

• Patent Grant
• 3773553

• References
• Source

• Patent Number

  3,773,553

• Date Filed

  Not available

• Date Issued

  Tuesday, November 20, 1973
  51 years ago

• CPC

  • H01L29/1608 - Silicon carbide
  • C30B13/02 - Zone-melting with a solvent
  • C30B19/04 - the solvent being a component of the crystal composition
  • C30B29/36 - Carbides
  • H01L33/0054 - for devices with an active region comprising only group IV elements
  • Y10S117/90 - Apparatus characterized by composition or treatment thereof
  • Y10S148/015 - Capping layer
  • Y10S148/016 - Catalyst
  • Y10S148/017 - Clean surfaces
  • Y10S148/025 - Deposition multi-step
  • Y10S148/097 - Lattice strain and defects
  • Y10S148/107 - Melt
  • Y10S148/148 - Silicon carbide
  • Y10S148/166 - Traveling solvent method

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 423 - Chemistry of inorganic compounds