3920492

Information

• Patent Grant
• 3920492

• References
• Source

• Patent Number

  3,920,492

• Date Filed

  Not available

• Date Issued

  Tuesday, November 18, 1975
  49 years ago

• CPC

  • H01L29/045 - by their particular orientation of crystalline planes
  • B22F3/24 - After-treatment of workpieces or articles
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02381 - Silicon, silicon germanium, germanium
  • H01L21/02433 - Crystal orientation
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • Y10S117/902 - Specified orientation, shape, crystallography, or size of seed or substrate
  • Y10S148/049 - Equivalence and options
  • Y10S148/097 - Lattice strain and defects
  • Y10S148/115 - Orientation
  • Y10S148/118 - Oxide films
  • Y10S438/973 - Substrate orientation

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices