Apparatus and method for controlling ion beam

Abstract

An apparatus and/or method for controlling an ion beam may be provided, and/or a method for preparing an extraction electrode for the same may be provided. In the apparatus, a plurality of extraction electrodes may be disposed in a path of an ion beam. At least one extraction electrode may include a plurality of sub-grids.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and/or other aspects and advantages will become more apparent and more readily appreciated from the following detailed description of example embodiments taken in conjunction with the accompanying drawings of which:

FIG. 1 is an ion beam apparatus according to the conventional art;

FIG. 2A is an apparatus for controlling an ion beam according to an example embodiment;

FIG. 2B is an example potential diagram according to a position of extraction electrodes of an apparatus for controlling an ion beam according to an example embodiment;

FIG. 3 is a view of an ion beam controlling extraction electrode according to an example embodiment;

FIG. 4 is a view of an ion beam controlling extraction electrode according to another example embodiment;

FIG. 5 illustrates ion beam distribution according to an example embodiment measured on a semiconductor substrate; and

FIG. 6 is a flow chart for illustrating a method for preparing a beam controlling extraction electrode according to an example embodiment.

Claims

1. An apparatus for controlling an ion beam, comprising: at least one extraction electrode disposed in a path of an ion beam,wherein the at least one extraction electrode includes a plurality of sub-grids.

2. The apparatus of claim 1, wherein the at least one extraction electrode includes a plurality of extraction electrodes.

3. The apparatus of claim 2, wherein the remainder of the plurality of extraction electrodes are extraction electrodes including a plurality of sub-grids.

4. The apparatus of claim 2, wherein the remainder of the plurality of extraction electrodes are extraction electrodes without a plurality of sub-grids.

5. The apparatus of claim 2, wherein some of the remainder of the plurality of extraction electrodes include a plurality of sub-grids and some of the remainder of the plurality of extraction electrodes do not include a plurality of sub-grids.

6. The apparatus of claim 1, wherein potentials are applied to the plurality of sub-grids to control the ion beam.

7. The apparatus of claim 1, further comprising: an ion source for generating the ion beam,wherein the at least one extraction electrode includes a plurality of extraction holes through which the ion beam passes.

8. The apparatus of claim 1, wherein the plurality of sub-grids include a first sub-grid in the at least one extraction electrode; anda second sub-grid outside the first sub-grid and having a potential difference with respect to the first sub-grid.

9. The apparatus of claim 8, further comprising: an insulating material between the first sub-grid and the second sub-grid.

10. The apparatus of claim 8, wherein the first sub-grid is a circular plate at the center of the at least one extraction electrode, and the second sub-grid is a plate having an inside diameter equal to or greater than an external diameter of the first sub-grid.

11. The apparatus of claim 2, wherein the at least one extraction electrode is most adjacent to the ion source among the plurality of extraction electrodes.

12. The apparatus of claim 2, wherein a ground potential is applied to a final extraction electrode spaced farthest from the ion source among the plurality of extraction electrodes.

13. The apparatus of claim 12, wherein the at least one extraction electrode is spaced from a first extraction electrode most adjacent to the ion source and is located between the first extraction electrode and the final extraction electrode.

14. The apparatus of claim 13, wherein the at least one extraction electrode has a different potential from the first extraction electrode.

15. The apparatus of claim 14, wherein a positive potential is applied to the first extraction electrode and a negative potential is applied to the at least one extraction electrode.

16. The apparatus of claim 1, wherein the plurality of sub-grids have a configuration reflecting an actual ion beam distribution.

17. A method for controlling an ion beam, the method comprising: applying a potential to at least one extraction electrode disposed in a path of an ion beam, wherein the at least one extraction electrode includes a plurality of sub-grids.

18. The method of claim 17, wherein the at least one extraction electrode includes a plurality of extraction electrodes.

19. The method of claim 18, wherein the remainder of the plurality of extraction electrodes are extraction electrodes including a plurality of sub-grids.

20. The method of claim 18, wherein the remainder of the plurality of extraction electrodes are extraction electrodes without a plurality of sub-grids.

21. The method of claim 18, wherein some of the remainder of the plurality of extraction electrodes include a plurality of sub-grids and some of the remainder of the plurality of extraction electrodes do not include a plurality of sub-grids.

22. The method of claim 17, further comprising: independently controlling potentials of the plurality of sub-grids.

23. The method of claim 22, wherein the potentials of the plurality of sub-grids are independently controlled to control energy, a flux, or an irradiation angle of the ion beam.

24. The method of claim 17, wherein the plurality of sub-grids are electrically insulated from one another.

25. The method of claim 18, wherein the at least one extraction electrode is most adjacent to an ion source for generating the ion beam among the plurality of extraction electrodes.

26. The method of claim 18, wherein a ground potential is applied to a final extraction electrode spaced farthest from the ion source among the plurality of extraction electrodes.

27. The method of claim 26, wherein the at least one extraction electrode is spaced from a first extraction electrode most adjacent to the ion source and is located between the first extraction electrode and the final extraction electrode.

28. The method of claim 27, wherein a positive potential is applied to the first extraction electrode and a negative potential is applied to the at least one extraction electrode.

29. The method of claim 17, wherein the plurality of sub-grids have a configuration reflecting an actual ion beam distribution.

30. A method for preparing an extraction electrode, the method comprising: measuring a distribution of an ion beam,forming an extraction electrode having a plurality of sub-grids having a configuration reflecting the distribution of the ion beam.

31. The method of claim 30, wherein measuring the distribution of the ion beam measures a two-dimensional distribution of the ion beam on a semiconductor substrate, and wherein forming the extraction electrode further includes dividing the semiconductor substrate into a plurality of regions having a two-dimensional configuration reflecting the two-dimensional distribution of the ion beam, andforming the plurality of sub-grids to correspond to the plurality of regions.

32. The method of claim 30, wherein forming the extraction electrode further includes interposing insulating material between the plurality of sub-grids.

33. The method of claim 30, wherein measuring the distribution of the ion beam measures energy, a flux, or an irradiation angle of the ion beam.

34. The method of claim 30, wherein the number of sub-grids formed is a function of a degree of uniformity of the distribution of the ion beam.