Claims
- 1. In a plating apparatus comprising a container, a cathode electrode, an anode electrode situated at a higher position within said container, and an intermediate electrode situated at an intermediate position within said container below said higher position, a method of plating an article situated at a lower position within said container below said intermediate position and having a metal seed layer in electrical contact with said cathode electrode, comprising:introducing plating fluid into said container to form a plating fluid bath; forming a positive voltage potential from said intermediate electrode to said cathode when said plating fluid bath is in contact with said intermediate electrode but not in contact with said anode electrode, wherein said positive voltage activates said plating fluid bath to reduce acidic etching of said metal seed layer; and forming a second positive voltage potential from said anode electrode to said cathode electrode when said plating fluid bath is in contact with said intermediate and anode electrodes, wherein said second positive voltage causes plating deposition to occur over said metal seed layer.
- 2. The method of claim 1, wherein said article comprises a wafer.
- 3. The method of claim 1, wherein said metal seed layer comprises copper.
- 4. The method of claim 1, wherein said intermediate electrode is configured into an annular ring.
- 5. The method of claim 1, wherein said cathode electrode is situated within said container.
- 6. In a plating apparatus comprising a container, a cathode electrode, an anode electrode situated at a higher position within said container, and an intermediate electrode situated at an intermediate position within said container below said higher position, a method of plating an article situated at a lower position within said container below said intermediate position and having a metal seed layer in electrical contact with said cathode electrode, comprising:introducing plating fluid into said container to form a plating fluid bath; forming a positive voltage potential from said intermediate electrode to said cathode when said plating fluid bath is in contact with said intermediate electrode but not in contact with said anode electrode, wherein said positive voltage activates said plating fluid bath to reduce acidic etching of said metal seed layer; removing said positive voltage potential; and forming a second positive voltage potential from said anode electrode to said cathode electrode when said plating fluid bath is in contact with said intermediate and anode electrodes, wherein said second positive voltage causes plating deposition to occur over said metal seed layer.
- 7. The method of claim 6, wherein said article comprises a wafer.
- 8. The method of claim 6, wherein said metal seed layer comprises copper.
- 9. The method of claim 6, wherein said intermediate electrode is configured into an annular ring.
- 10. The method of claim 6, wherein said cathode electrode is situated within said container.
CROSS-REFERENCES TO RELATED APPLICATIONS
This application is a Divisional Application of application Ser. No. 09/348,768, filed Jul. 7, 1999, now U.S. Pat. No. 6,197,182 which is incorporated herein by reference.
US Referenced Citations (9)