Stefan Hien et al. “Dual-Wavelength Photoresist for Sub-200 nm Lithography”, Proc. SPIE 1998, vol. 3333, pp. 154-164. |
G.L. Harris et al.: “Ohmic contacts to SiC”, in “Properties of Silicone Carbide”, 1995, Inspec, London, Great Britain, pp. 231-234. |
J. Crofton et al.: “The Physics of Ohmic Contacts SiC”, Phys. Stat. Sol. (b) 202 (1997), pp. 581-603. |
Lisa M. Porter et al.: “A critical review of ohmic and rectifying contacts for silicon carbide”, Materials Science and Engineering, vol. B34, 1995, pp. 83-105. |
J. Crofton et al.: High-temperature ohmic contact to n-type 6H-SiC using nickel, J. Appl. Phys. vol. 77 No. 3, Feb. 1, 1995, pp. 1317-1319. |
C. Hallin et al.: “Interface chemistry and electrical properties of annealed Ni and Ni/Al-6H SiC structures”, Inst. Phys. Conf. Ser. No. 142, Chapter 3, paper presented at Silicon Carbide and Related Materials 1995 Conf., Kyoto, Japan. |
“Advances in Chemical Amplification Resist Systems” (Ito), dated Dec. 1992, Jpn. J. Appl. Phy. vol. 31, pp. 4273-4282, as mentioned on p. 1 of the specification. |
“Deep-UV photoresists for sub 0.25 μm processing” (Krisa et al.), dated May-Jun. 1997, Advanced Lithography, pp. 17-24, as mentioned on p. 1 of the specification. |