Claims
- 1. A process of manufacturing a circuit substrate, comprising the steps of:
- preparing a slurry by mixing glass, filler, organic binder, and solvent,
- forming a green sheet from said slurry,
- forming a conductor by forming via holes and wiring using conducting material on said green sheet, and
- heating said green sheet at 700.degree. to 880.degree. C. to remove the binder, followed by heating at 900.degree. to 1,050.degree. C. to sinter,
- wherein said glass contains SiO.sub.2, B.sub.2 O.sub.3, and R.sub.2 O (R represents alkali metal), and has a composition included in an area, in a triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, defined with five lines comprising a line connecting a point of first composition and a point of third composition, a line connecting the point of third composition and a point of tenth composition, a line connecting the point of tenth composition and a point of eleventh composition, a line connecting the point of eleventh composition and a point of fourth composition, and a line connecting the point of fourth composition and the point of first composition (the area includes the lines),
- wherein a total weight of SiO.sub.2, B.sub.2 O.sub.3, and R.sub.2 O is 100%,
- the first composition consists of 88% by weight of SiO.sub.2 and 12% by weight of B.sub.2 O.sub.3,
- the third composition consists of 82% by weight of SiO.sub.2 and 18% by weight of B.sub.2 O.sub.3,
- the tenth composition consists of 84% by weight of SiO.sub.2, 10% by weight of B.sub.2 O.sub.3, and 6% by weight of R.sub.2 O,
- the eleventh composition consists of 90% by weight of SiO.sub.2, 5% by weight of B.sub.2 O.sub.3, and 5% by weight of R.sub.2 O, and
- the fourth composition consists of 89% by weight of SiO.sub.2, 10% by weight of B.sub.2 O.sub.3, and 1% by weight of R.sub.2 O.
- 2. A process of manufacturing a circuit substrate as claimed in claim 1, wherein said glass is a glass having the softening point of 850.degree. to 1,1000.degree. C.
- 3. A process of manufacturing a circuit substrate as claimed in claim 1, wherein said glass contains additionally Al.sub.2 O.sub.3 in an amount of 90% or less to molar amount of said R.sub.2 O component.
- 4. A process for manufacturing a circuit substrate as claimed in claim 1, wherein said glass contains additionally ZnO component in an amount of 1 to 4% by weight to the total weight of glass.
- 5. A process for manufacturing a circuit substrate as claimed in claim 1, further comprising a step of laminating a plurality of green sheets, on which at least one of said via holes and said wiring is provided, to form a green sheet laminate, the laminating being performed between said conductor forming step and the heating steps, the green sheet heated in said heating steps being said green sheet laminate.
- 6. A process for manufacturing a circuit substrate as claimed in claim 1, wherein said conductor is copper.
- 7. Glass having a composition included in an area, in a triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, defined with five lines comprising a line connecting a point of first composition and a point of third composition, a line connecting the point of third composition and a point of tenth composition, a line connecting the point of tenth composition and a point of eleventh composition, a line connecting the point of eleventh composition and a point of fourth composition, and a line connecting the point of fourth composition and the point of first composition (the area includes the lines),
- wherein a total weight of SiO.sub.2, B.sub.2 O.sub.3, and R.sub.2 O is 100%,
- the first composition consists of 88% by weight of SiO.sub.2 and 12% by weight of B.sub.2 O.sub.3,
- the third composition consists of 82% by weight of SiO.sub.2 and 18% by weight of B.sub.2 O.sub.3,
- the tenth composition consists of 84% by weight of SiO.sub.2, 10% by weight of B.sub.2 O.sub.3, and 6% by weight of R.sub.2 O,
- the eleventh composition consists of 90% by weight of SiO.sub.2, 5% by weight of B.sub.2 O.sub.3, and 5% by weight of R.sub.2 O, and
- the fourth composition consists of 89% by weight of SiO.sub.2, 10% by weight of B.sub.2 O.sub.3, and 1% by weight of R.sub.2 O.
- 8. Glass ceramic composition for circuit substrates, comprising 60 to 95% by volume of glass and 40 to 5% by volume of filler,
- said glass containing SiO.sub.2, B.sub.2 O.sub.3, and R.sub.2 O (R represents an alkali metal) and
- having a composition included in an area, in a triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, defined with five lines comprising a line connecting a point of first composition and a point of third composition, a line connecting the point of third composition and a point of tenth composition, a line connecting the point of tenth composition and a point of eleventh composition, a line connecting the point of eleventh composition and a point of fourth composition, and a line connecting the point of fourth composition and the point of first composition (the area includes the lines),
- wherein a total weight of SiO.sub.2, B.sub.2 O.sub.3, and R.sub.2 O is 100%,
- the first composition consists of 88% by weight of SiO.sub.2 and 12% by weight of B.sub.2 O.sub.3,
- the third composition consists of 82% by weight of SiO.sub.2 and 18% by weight of B.sub.2 O.sub.3,
- the tenth composition consists of 84% by weight of SiO.sub.2, 10% by weight of B.sub.2 O.sub.3, and 6% by weight of R.sub.2 O, and
- the eleventh composition consists of 90% by weight of SiO.sub.2, 5% by weight of B.sub.2 O.sub.3, and 5% by weight of R.sub.2 O,
- the fourth composition consists of 89% by weight of SiO.sub.2, 10% by weight of B.sub.2 O.sub.3, and 1% by weight of R.sub.2 O.
- 9. An electronic circuit module comprising:
- a multilayered circuit substrate with circuit substrates containing amorphous glass with a softening point in a range of 850.degree. to 1100.degree. C., so as to facilitate removal of binder from green sheets used in forming the multilayered circuit substrate, and Cu wiring formed on said circuit substrates; and
- LSIs and I/O pins mounted on the multilayered circuit substrate and connected to the Cu wiring.
- 10. An electronic circuit module as claimed in claim 9, wherein said amorphous glass has a thermal expansion coefficient of 2.5.times.10.sup.-6 to 3.5.times.10.sup.-6 and B.sub.2 O.sub.3 elution of 0 to 2.0 mg/m.sup.2.
- 11. An electronic circuit module as claimed in claim 9, wherein said circuit substrate contains 60 to 95% by volume of amorphous glass and 5 to 40% by volume of filler.
- 12. An electronic circuit module as claimed in claim 11, wherein said filler is at least one of alumina, mullite, cordierite and quartz.
- 13. An electronic circuit module as claimed in claim 9, wherein said glass has a glass softening point in a range of 900.degree. to 1100.degree. C.
- 14. An electronic circuit module as claimed in claim 9, wherein the circuit substrates are substrates formed by removing the binder at a temperature of more than 850.degree. C.
- 15. An electronic circuit module for an instruction processor, comprising:
- a multilayered circuit substrate containing an amorphous glass with softening point in a range of 850.degree. to 1100.degree. C., so as to facilitate removal of binder from green sheets used in forming the multilayered circuit substrate, and Cu wiring formed on said circuit substrate;
- LSIs mounted on the multilayered circuit substrate; and
- I/O pins and cooling parts connected to the multilayer circuit substrate.
- 16. An electronic circuit module as claimed in claim 15, wherein said amorphous glass has a thermal expansion coefficient of 2.5.times.10.sup.-6 to 3.5.times.10.sup.-6 and B.sub.2 O.sub.3 elution of 0 to 2.0 mg/m.sup.2.
- 17. An electronic circuit module as claimed in claim 16, wherein said multilayer circuit substrate contains said amorphous glass and filler which is at least one of alumina, mullite, cordierite and quartz.
- 18. An electronic circuit module as claimed in claim 15, wherein said glass has a glass softening point in a range of 900.degree. to 1100.degree. C.
- 19. An electronic circuit module as claimed in claim 15, wherein the circuit substrate is a substrate formed by removing the binder at a temperature of more than 850.degree. C.
- 20. A multilayered circuit substrate comprising:
- circuit substrates with relative dielectric constant of 4.3 to 5.6, said substrates containing amorphous glass with a softening point in a range of 850.degree. to 1100.degree. C., so as to facilitate removal of binder from green sheets used in forming the multilayered circuit substrate; and
- Cu wiring formed on said circuit substrates.
- 21. A multilayered circuit substrate as claimed in claim 20, wherein the glass has a glass softening point in a range of 900.degree. to 1100.degree. C.
- 22. A multilayered circuit substrate as claimed in claim 20, wherein the circuit substrates are substrates formed by removing the binder at a temperature of more than 850.degree. C.
- 23. An electronic computer comprising:
- an electronic circuit module for an instruction processor having a multilayered circuit substrate with circuit substrates containing amorphous glass with a softening point in a range of 850.degree. to 1100.degree. C., so as to facilitate removal of binder from green sheets used in forming the multilayered circuit substrate, and Cu wiring formed on said circuit substrates, and LSIs mounted on the multilayered circuit substrate, and I/O pins and cooling parts connected to the multilayered circuit substrate;
- a system controlled connected to said electronic circuit module;
- a memory connected to said system controller; and
- an I/O processor connected to said system controller.
- 24. An electronic computer as claimed in claim 23, wherein said amorphous glass has a thermal expansion coefficient of 2.5.times.10.sup.-6 to 3.5.times.10.sup.-6 and B.sub.2 O.sub.3 elution of 0 to 2.0 mg/m.sup.2.
- 25. An electronic computer as claimed in claim 24, wherein said multilayer circuit substrate contains an amorphous glass and filler which is at least one of alumina, mullite, cordierite and quartz.
- 26. An electronic computer as claimed in claim 23, wherein the glass has a glass softening point in a range of 900.degree. to 1100.degree. C.
- 27. An electronic computer as claimed in claim 23, wherein the circuit substrates are substrates formed by removing the binder at a temperature of more than 850.degree. C.
- 28. An electronic circuit module comprising:
- a multilayered circuit substrate with circuit substrates containing amorphous glass with a glass softening point of 900.degree. to 1100.degree. C. and Cu wiring formed on said circuit substrates; and
- LSIs and I/O pins mounted on the multilayered circuit substrate and connecting to the Cu wiring.
- 29. An electronic circuit module as claimed in claim 28, wherein the multilayered circuit substrate is a substrate formed by processing including removing binder from green sheets for forming the circuit substrate, at a temperature of more than 850.degree. C.
- 30. An electronic circuit module for an instruction processor, comprising:
- a multilayered circuit substrate with circuit substrates containing amorphous glass with a glass softening point of 900.degree. to 1100.degree. C. and Cu wiring formed on said circuit substrates;
- LSIs mounted on the multilayered circuit substrate; and
- I/O pins and cooling parts connected to the multilayered circuit substrate.
- 31. An electronic circuit module as claimed in claim 30, wherein the multilayered circuit substrate is a substrate formed by processing including removing binder from green sheets for forming the circuit substrate, at a temperature of more than 850.degree. C.
- 32. A multilayered circuit substrate comprising:
- circuit substrates with relative dielectric constant of 4.3 to 5.6 and containing amorphous glass with a glass softening point of 900.degree. to 1100.degree. C.; and
- Cu wiring formed on said circuit substrates.
- 33. A multilayered circuit substrate as claimed in claim 32, wherein the circuit substrates are substrates formed by processing including removing binder from green sheets for forming the circuit substrates, at a temperature of more than 850.degree. C.
- 34. An electronic computer comprising:
- an electronic circuit module for an instruction processor having a multilayered circuit substrate with circuit substrates containing amorphous glass with a glass softening point of 900.degree. to 1100.degree. C. and Cu wiring formed on said circuit substrates, LSIs mounted on the multilayered circuit substrate, and I/O pins and cooling parts connected to the multilayered circuit substrate;
- a system controller connected to said electronic circuit module;
- a memory connected to said system controller; and
- an I/O processor connected to said system controller.
- 35. An electronic computer as claimed in claim 34, wherein the multilayered circuit substrate is a substrate formed by processing including removing binder from green sheets for forming the multilayered circuit substrate, at a temperature of more than 850.degree. C.
- 36. A multilayered circuit substrate comprising:
- circuit substrates with relative dielectric constant of 4.3 to 5.6, said substrates containing amorphous glass with a softening point in a range of 850.degree. to 1100.degree. C., so as to facilitate removal of binder from green sheets used in forming the multilayered circuit substrate, wherein said amorphous glass has a thermal expansion coefficient of 2.5.times.10.sup.-6 to 3.5.times.10.sup.-6 ; and
- Cu wiring formed on said circuit substrates.
- 37. A electronic circuit module comprising:
- a multilayered circuit substrate with circuit substrates having a relative dielectric constant of 4.3 to 5.6, said substrates containing amorphous glass with a softening point in a range of 850.degree. to 1100.degree. C., so as to facilitate removal of binder from green sheets used in formed the multilayered circuit substrate, wherein said amorphous glass has a thermal expansion coefficient of 2.5.times.10.sup.-6 to 3.5.times.10.sup.-6, and Cu wiring formed on said circuit substrates; and
- LSIs and I/O pins mounted on the multilayered circuit substrate and connected to the Cu wiring.
- 38. An electronic computer comprising:
- an electronic circuit module including a multilayered circuit substrate with circuit substrates and Cu wiring formed on said circuit substrates, and LSIs and I/O pins mounted on the multilayered circuit substrate and connected to the Cu wiring, said circuit substrates having a relative dielectric constant of 4.3 to 5.6 and containing amorphous glass with a softening point in a range of 850.degree. to 1100.degree. C., so as to facilitate removal of binder from green sheets used in forming the multilayered circuit substrate, wherein said amorphous glass has a thermal expansion coefficient of 2.5.times.10.sup.-6 to 3.5.times.10.sup.-6 ;
- a system controller connected to said electronic circuit module;
- a memory connected to said system controller; and
- an I/O processor connected to said system controller.
- 39. A multilayered circuit substrate comprising:
- circuit substrates with relative dielectric constant of 4.3 to 5.6, said substrates containing amorphous glass with a softening point in a range of 850.degree. to 1100.degree. C., so as to facilitate removal of binder from green sheets used in forming the multilayered circuit substrate, wherein said amorphous glass has B.sub.2 O.sub.3 elution of 0 to 2.0 mg/m.sup.2 ; and
- Cu wiring formed on said circuit substrates.
- 40. A electronic circuit module comprising:
- a multilayered circuit substrate with circuit substrates having a relative dielectric constant of 4.3 to 5.6, said substrates containing amorphous glass with a softening point in a range of 850.degree. to 1100.degree. C., so as to facilitate removal of binder from green sheets used in formed the multilayered circuit substrate, wherein said amorphous glass has B.sub.2 O.sub.3 elution of 0 to 2.0 mg/m.sup.2, and Cu wiring formed on said circuit substrates; and
- LSIs and I/O pins mounted on the multilayered circuit substrate and connected to the Cu wiring.
- 41. An electronic computer comprising:
- an electronic circuit module including a multilayered circuit substrate with circuit substrates and Cu wiring formed on said circuit substrates, and LSIs and I/O pins mounted on the multilayered circuit substrate and connected to the Cu wiring, said circuit substrates having a relative dielectric constant of 4.3 to 5.6 and containing amorphous glass with a softening point in a range of 850.degree. to 1100.degree. C., so as to facilitate removal of binder from green sheets used in forming the multilayered circuit substrate, wherein said amorphous glass has B.sub.2 O.sub.3 elution of 0 to 2.0 mg/m.sup.2 ;
- a system controller connected to said electronic circuit module;
- a memory connected to said system controller; and
- an I/O processor connected to said system controller.
- 42. A multilayered circuit substrate comprising:
- circuit substrates with relative dielectric constant of 4.3 to 5.6, said substrates containing amorphous glass with a softening point in a range of 850.degree. to 1100.degree. C., wherein said amorphous glass has a thermal expansion coefficient of 2.5.times.10.sup.-6 to 3.5.times.10.sup.-6 and B.sub.2 O.sub.3 elution of 0 to 2.0 mg/m.sup.2 ; and
- Cu wiring formed on said circuit substrates.
- 43. A electronic circuit module comprising:
- a multilayered circuit substrate with circuit substrates having a relative dielectric constant of 4.3 to 5.6, said substrates containing amorphous glass with a softening point in a range of 850.degree. to 1100.degree. C., wherein said amorphous glass has as thermal expansion coefficient of 2.5.times.10.sup.6 to 3.5.times.10.sup.-6 and B.sub.2 O.sub.3 elution of 0 to 2.0 mg/m.sup.2, and Cu wiring formed on said circuit substrates; and
- LSIs and I/O pins mounted on the multilayered circuit substrate and connected to the Cu wiring.
- 44. An electronic computer comprising:
- an electronic circuit module including a multilayered circuit substrate with circuit substrates and Cu wiring formed on said circuit substrates, and LSIs and I/O pins mounted on the multilayered circuit substrate and connected to the Cu wiring, said circuit substrates having a relative dielectric constant of 4.3 to 5.6 and containing amorphous glass with a softening point in a range of 850.degree. to 1100.degree. C., wherein said amorphous glass has a thermal expansion coefficient of 2.5.times.10.sup.-6 to 3.5.times.10.sup.-6 and B.sub.2 O.sub.3 elution of 0 to 2.0 mg/m.sup.2 ;
- a system controller connected to said electronic circuit module;
- a memory connected to said system controller; and
- an I/O processor connected to said system controller.
Priority Claims (1)
| Number |
Date |
Country |
Kind |
| P06-195806 |
Aug 1994 |
JPX |
|
Parent Case Info
This application is a Continuation application of application Ser. No. 08/512,705; filed Aug. 8, 1995, the contents of which are incorporated herein by reference in their entirety.
US Referenced Citations (13)
Foreign Referenced Citations (3)
| Number |
Date |
Country |
| 0445968 |
Sep 1991 |
EPX |
| 4307600 |
Sep 1993 |
DEX |
| 9306053 |
Apr 1993 |
WOX |
Continuations (1)
|
Number |
Date |
Country |
| Parent |
512705 |
Aug 1995 |
|
Patent Grant
6118671
