Classification apparatus for semiconductor substrate, classification method of semiconductor substrate, and manufacturing method of semiconductor device

Abstract

A classification apparatus for the semiconductor substrate is provided with a bow measuring section which accepts silicon substrates and measures respective bows thereof. The classification apparatus is also provided with a bow judging section which, based on one or more standard value(s) set in advance, checks a measurement result by the bow measuring section against the standard value(s). The bow judging section judges to which of ranges defined based on the standard value(s) of the bow the measurement result by the bow measuring section belongs. Further, the classification apparatus is provided with a sorting section which accepts the silicon substrate having been measured by the bow measuring section and sorts the accepted silicon substrates based on the judgment results by the bow judging section. In other words, silicon substrates are grouped according to the bows by the sorting section. Then, respective silicon substrates are discharged in a grouped state.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a graph showing a measurement result of a threshold voltage of a transistor;

FIG. 2 is a view showing regions in which defects occur;

FIG. 3 is a block diagram showing a classification apparatus for a semiconductor substrate according to a first embodiment of the present invention;

FIG. 4 is a flowchart showing a manufacturing method of a semiconductor device according to a second embodiment of the present invention;

FIG. 5 is a view showing an example of a dry etching apparatus; and

FIG. 6A to FIG. 6E are cross-sectional views showing, step by step, processes to which the second embodiment of the present invention is applied.

Claims

1. A classification apparatus for a semiconductor substrate, comprising: a bow measurer measuring bows of semiconductor substrates; anda sorter sorting the semiconductor substrates by checking the bows of the semiconductor substrates against a standard set in advance.

2. The classification apparatus for the semiconductor substrate according to claim 1, wherein said sorter sorts the semiconductor substrates into ones whose bows are “0” or more and into the other ones whose bows are less than “0”.

3. A classification method of a semiconductor substrate, comprising the steps of: measuring bows of semiconductor substrates; andsorting the semiconductor substrates by checking the bows of the semiconductor substrates against a standard set in advance.

4. The classification method of the semiconductor substrate according to claim 3, wherein the semiconductor substrates are sorted into ones whose bows are “0” or more and into the other ones whose bows are less than “0”.

5. A manufacturing method of a semiconductor device, comprising the steps of: recognizing a bow of a semiconductor substrate;acquiring an etching condition corresponding to the bow of the semiconductor device from etching conditions set in advance according to each bow; andperforming dry-etching of the semiconductor substrate under the etching condition acquired in said step of acquiring the etching condition.

6. The manufacturing method of a semiconductor device according to claim 5, wherein said step of recognizing the bow comprises the step of acquiring information of the bow attached to the semiconductor substrate as shape information of the semiconductor substrate.

7. The manufacturing method of a semiconductor device according to clam 6, further comprising the step of, before said step of recognizing the bow, accepting semiconductor substrates whose bows are in a predetermined range, wherein, in said step of recognizing the bow, the range of the bow is recognized.

8. The manufacturing method of a semiconductor device according to claim 6, wherein said step of recognizing the bow comprises the step of measuring the bow of the semiconductor substrate.

9. The manufacturing method of a semiconductor device according to claim 5, wherein the etching condition is set separately for the condition for the bow of “0” or more and for the condition for the bow of less than “0”.

10. The manufacturing method of a semiconductor device according to claim 5, comprising the steps of, before said step of recognizing the bow: accepting semiconductor substrates;measuring the bows of the semiconductor substrates; andsorting the semiconductor substrates by checking the bows of the semiconductor substrates against a standard set in advance.

11. The manufacturing method of a semiconductor device according to claim 5, wherein the etching conditions are ones different in pressure of cooling gas supplied into a chamber based on the bow.

12. The manufacturing method of a semiconductor device according to claim 5, wherein the etching condition includes a condition in which a gas cooling pressure of a center portion of the semiconductor substrate is higher than a gas cooling pressure of an outer peripheral portion, as a condition for a semiconductor substrate whose bow is “0” or more.

13. The manufacturing method of a semiconductor device according to claim 5, wherein the etching conditions include a condition in which a gas cooling pressure of an outer peripheral portion of the semiconductor substrate is higher than a gas cooling pressure of a center portion, as a condition for a semiconductor substrate whose bow is less than “0”.