Vig, John R., "UV/Ozone Cleaning of Surfaces," J. Vac. Sci Tehcnol. A3, May/Jun. (1985) pp. 1027-1034. |
Vig, John R., "UV/Ozone Cleaning of Surfaces", Treatise On Clean Surface Technology, K.L. MIttal, editor, vol. 1, pp. 1-26, Plenum Press (1987). |
T. Aoyama, et al. "Removing native oxide from Si(001) surfaces using photoexcited fluorine gas"; J. Electrochem. Soc., 140, Feb. 1993, pp. 1704-1708. |
T. Aoyama et al, "Surface Cleaning for Si Epitaxy Using Photoexcited Gas"; Appl. Phys. Lett., 59, Nov. 1991, pp. 2576-2578. |
"Plasmaless dry etching of silicon with fluorine-containing compounds", J. Appl. Phys. 56(10), Nov. 15, 1984, pg. 2939-2942. |
"CDE Patent Search--Technical Summary, Chemical Down Stream Etch Tools, Process, and Chemistry", Paul K. Aum, Jan. 7, 1994. |
"Mechanisms of the HF/H.sub.2 O Vapor Phase Etching of Si0.sub.2 ", C.R.Helms and B.E. Deal, Journal of the IES May/Jun. 1992, pg. 21-26. |
"Native oxide removal on Si surface by NF, added hydrogen plasma downstream", Jun Kikuchi, Masao Iga, Shuzo Fujimura and Hiroshi Yano, SPIE vol. 2091, pg. 154-159. |
"Silicon Surface Cleaning Using Photoexcited Flouirne Gas Diluted with Hydrogen", Takayuki Aoyama, Tatsuya Yamazaki, and Tokashi Ito, J. Electrochem. Soc., vol. 140. No. 6, Jun. 1993, pg. 1704-1708. |
"A Dry Etching Technology Using Long-Lived Active Species Excited by Microwave", Y. Heriike and M. Shibagaki, Toshiba Research and Development Center, Tokoyo Shibata Electric Co Ltd. Kawasaki, Japan. |
"Highly Selective Etching of Si.sub.2 N.sub.4 to S .sub.1 O.sub.2 Employing Fluorine and Chlorine Atoms Generated by Microwave Discharge", S. Sutoj N. Hayasaka, H. Okano, and Y. Henike. J. Electrochem. Soc. vol. 136, No. 7, Jul. 1989, pg. 2032-2034. |
"Directonal Dry Etching of Silicon by a Reactive Nomle-Jet", Hideo Akiya, Prec. of DPS. pg. 119-126, Oct. 1981, Tokyo, Japan. |
"Pad Oxide Roughing in a Remote Plasma High Process for Silicon Nitride Using an In Sita Spectral Ellipsometer", Lee M. Lowenstein, Red K. Pehlmeier, Stephen A. Henck and Walter M. Duncan, PRCC. of ECS, vol. 93(21), pg. 373, 1993. |
"Selective Etching of silicon nitride using plasmas of CF.sub.4 and SF.sub.4 ", Lee M. Loewenstein, J. Vac. S.I. Technol. A. vol. 17, No. 3 May/Jun. 1989, pg. 636-1394. |
Selective Isotropic Dry Etching of Si.sub.2 N.sub.4 of S.O: F.H.M. Sundras, J. Dieleman, B.J.B. Peters, and J. A.M. Sanders, J. Electrochemical Soc. vol. 129, No. 11. pg. 2559-2600. |
"Highly Selective Etching off Si.sub.2 N.sub.4 Over S.O.sub.2 Employing a Downstream Type Reactor", N. Hayasaka, H. Chamo, Y. Henile, Solid State Technology, Apr. 1988, pg. 127-139. |
"Highly Selective Etching of Si.sub.2 N.sub.4 Over SO.sub.2 Employing a Downstream Type Reactor", N. Hayasaka, H. Chano, Y. Henike, Solid State Technology, Apr. 1988, pg. 127-130. |
Initiation Phenomina in Pulled Chemical . . . P. Menan, R. Bruce Doak, Prepared for Naval Research Laboratory, Oct. 1978. |
"Photochemistry of Interhalegon Composites of Interluekens Rocket Propellants", Arthur E. Anworthy, R. D. Wilren, K. H. Mueller, prepared for Air Office of Scientific Research, Sep. 1973. |
"Plasmaless Dry Etching of Silicon Nitride Films with Chlorine Trilucride Gas", Yoji Saito, Masahiro Hirabara, Akira Yoshida, IEICE Trans. Electron, vol. E75 C, No. 7, Jul. 1992, pg. 834-838. |
"Reaction Mechanisms For the Photon-Enhanced Etching of Semiconductors: An Investigation of the UV-Stimulated Interaction of Chlorine With Si(100)", by R. B. Jackman et al, Surface Science 176 (1986) 183-92. |
"Wafer Cleaning With Photo-Excited Halogen Radical", Takashi Ito, Fujitsu Laboratories Ltd., 1991, Proceedings--Institute of Enviromental Sciences. |
"Plasmaless Cleaning Process of Silicon Surface Using Chlorine Trifluoride" by Yoji Saito, Osamu Yamoka et al, Appl. Phys. Lett. 56(12) Mar. 19, 1990, pp. 1119-1121. |
"Selective Etching of Native Oxide by Dry Processing Using Ultra Clean Anhydrous Hydrogen Fluoride" by N. Miki et al, 730 IEDM 88. |
"Selective Interhalogen Etching of Tantalum Compounds and Other Semiconductor Materials" by D. E. Ibbotson et al. Appl. Phys. Lett. 46(8), Apr. 15, 1985. pp. 794-796. |
"Characterization of Wafer Cleaning and Oxide Etching Using Vapor-Phase Hydrogen Fluoride" by M. Wong et al. I. Electrochem. Soc., vol. 138, No. 6, Jun. 1991, pp. 1779-1802. |
"Wafer Temperature Dependence of the Vapor-Phase HF Oxide Etch" by Man Wong et al, J. Electrochem. Soc., vol. 140, No. 1 pp. 205-208. |
"Vapor Phase Cleaning of Submicron Inter-Metal Vias" by Daniel P. Gay et al, FSI Technical Report, TR397, Nov. 5, 1993. |
"A New Cleaning method by Using Anhydrous HF/CH.sub.3 OH Vapor System" by A. Izumi et al, EOS Proceedings, vol. 92-12 (1992), pp. 260-267. |
"Etching of Thermal Oxides in Low Pressure Anhydrous HF/CH3 OH Gas Mixture at Elevated Temperature", by J. Ruzyllo et al. J. Electrochem. Soc., vol. 140, No. 4, Apr. 1993, pp. L64-L66. |
Abstract: Pat. No. 3,511,727 to Hays, issued May 7, 1912. |
Abstract: Pat. No. 5,240,554 to Hayaski Hisataka, issued Aug. 31, 1993. |
Abstract: Pat. No. 5,122,225 to Monte issued Jun. 16, 1992. |
Abstract: Pat. No. 5,094,978 to Miyagaki Shinji et al issued Mar. 10, 1992. |
Abstract: Pat. No. 4,717,447 to Dieleman issued Jan. 5, 1988. |
Abstract: Pat. No. 4,574,177 to Wang issued Mar. 4, 1986. |
Abstract: Pat No. 4,125,672 to Kakushi et al issued Jan. 14, 1978. |
Abstract: Pat. No. 4,440,883 to Pammer Erich issued Apr. 3, 1984. |
Abstract: Pat. No. 4,310,380 to Flamm issued Jan. 12, 1982. |
Abstract: Pat. No. 5,069,724 to Fujii et al issued Dec. 3, 1991. |
Abstract: Pat, No. 4,799,991 to Dockrey issued Jan. 24, 1989. |