Claims
- 1. A plasma immersion ion implantation (PIII) treatment system for implantation, said system comprising:a chamber in which a plasma is generated in said chamber, said chamber having a bottom region exposed to the plasma and lined with silicon; and a silicon coated susceptor disposed in said chamber to support a silicon substrate, said silicon coated susceptor providing fewer non-silicon bearing impurities that can be sputtered off of the susceptor during an implantation process.
- 2. The system of claim 1 wherein said chamber comprises a plurality of substantially planar rf transparent windows on a surface of said chamber.
- 3. The system of claim 1 further comprising:an rf generator; and at least two rf sources, each external to said vacuum chamber and each said rf source electrically connected to said rf generator and juxtaposed to a respective one of said plurality rf transparent windows, and operative to generate said plasma in the vacuum chamber; said rf sources operative to produce a local, substantially uniform plasma proximate said substrate.
- 4. The system of claim 3 further comprising at least one tuning circuit, each said at least one tuning circuit electrically connected to one of said at least two rf sources.
- 5. The system of claim 1 wherein said silicon coated susceptor has a coating selected from polysilicon, amorphous silicon, or crystalline silicon.
- 6. The system of claim 5 wherein said silicon coated susceptor has a base metal selected from stainless steel or aluminum.
- 7. The system of claim 1 wherein said silicon substrate is a silicon bearing wafer.
- 8. The system of claim 1 wherein said chamber comprises a silicon coating defined on an interior region of said chamber, said silicon coating providing fewer non-silicon impurities onto said silicon substrate, said non-silicon impurities can be sputtered off of said chamber.
- 9. The system of claim 8 wherein said silicon coating is selected from amorphous silicon, polysilicon, or crystalline silicon.
- 10. The system of claim 8 wherein said chamber comprises an aluminum bearing material underlying said silicon coating.
- 11. The system of claim 1 wherein said system is provided in a cluster tool.
- 12. A method for forming a substrate, said method comprising steps of:providing a substrate onto a silicon coated susceptor within a plasma immersion ion implantation chamber, said substrate comprising a silicon wafer with a surface, and said chamber having a bottom surface exposed to a plasma and lined with silicon; introducing particles in a directional manner toward and through said surface of said substrate to uniformly place said ions into a selected depth across a plane of said substrate; and sputtering silicon bearing material off of said silicon coated susceptor, said silicon bearing material being attached to said surface of said substrate.
- 13. The method of claim 12 wherein said silicon coated susceptor comprises a material selected from an amorphous silicon, polysilicon, or crystalline silicon.
- 14. The method of claim 12 wherein said silicon coated susceptor comprises a base material selected from aluminum or stainless steel.
- 15. The method of claim 12 wherein said substrate comprises silicon wafer.
- 16. The method of claim 12 wherein said chamber comprises a silicon coating defined on interior surfaces of said chamber.
- 17. The method of claim 16 wherein said silicon coating is selected from amorphous silicon, polysilicon, or crystalline silicon.
- 18. The method of claim 12 wherein said method occurs in a cluster tool.
CROSS REFERENCES TO RELATED APPLICATIONS
The present patent application claims priority to U.S. Provisional Patent Application Ser. No. 60/074,397 filed Feb. 11, 1998, which is hereby incorporated by reference for all purposes.
The following two commonly-owned copending applications, including this one, are being filed concurrently and the other one is hereby incorporated by reference in its entirety for all purposes:
1. U.S. patent application Ser. No. 09/215,094, allowed Chu et al., entitled, “Coated Platen Design For Plasma Immersion Ion Implantation,”; and
2. U.S. patent application Ser. No. 09/216,035, now U.S. Pat. No. 6,120,660 Chu et al., entitled, “Removable Liner Design For Plasma Immersion Ion Implantation”.
US Referenced Citations (7)
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/074397 |
Feb 1998 |
US |