Patent Application
20240030102
The present disclosure relates to a cooling mechanism having a nanocapillary structure constituted by graphene or the like, a semiconductor device including the cooling mechanism, a method for manufacturing the same, and an electronic device.
Conventionally, with the progress of miniaturization of semiconductor processes and an increase in speed of semiconductor chips, power consumption of semiconductor chips has increased, resulting in an increase in the amount of heat generated. The increase in the amount of heat generated in semiconductor chips causes problems such as characteristic fluctuation and reliability deterioration. For this reason, semiconductor packages have been required to efficiently cool chips.
As a cooling mechanism of a semiconductor package that meets such needs, a technique of mounting a heat dissipation fin and a heat pipe is known.
According to the configuration disclosed in Patent Document 1, a technique of mixing graphene particles in a sealing resin covering a semiconductor chip is disclosed.
The semiconductor chip is molded with a resin to prevent entry of moisture and the like and to prevent deterioration of characteristics of the semiconductor chip, but the semiconductor chip has low heat dissipation to heat generated by an operating current and the like, and is likely to have a high temperature. Graphene is suitable for use as a heat transfer filler because of its good thermal conductivity and light mass. Therefore, by mixing the graphene particles in the sealing resin, the thermal conductivity of the sealing resin is improved, and the heat dissipation of the semiconductor device can be improved.
According to the configuration disclosed in Patent Document 2, a technique for efficiently cooling a semiconductor light-emitting element and suppressing adhesion of dust to the vicinity of a lead terminal connection portion on the substrate is disclosed.
Specifically, a light source unit including a plurality of semiconductor light-emitting elements arranged in a matrix includes a heat dissipation member that sandwiches an element connection substrate together with an element holding member, and a plurality of heat pipes provided in contact with the element holding member, in order to cool heat generated by the semiconductor light-emitting elements.
Here, the heat generated in the semiconductor light-emitting elements is dissipated through either of a first or second heat conduction path. That is, in the first heat conduction path, heat is sequentially conducted through the element holding member, the element connection substrate, and the heat dissipation member, and is dissipated by the heat dissipation fin.
On the other hand, in the second heat conduction path, heat is conducted from the element holding member to the heat pipe, is transmitted to the heat dissipation fin via the liquid in the heat pipe, and is dissipated at the heat dissipation fin. The semiconductor light-emitting element can be efficiently cooled by heat dissipation using the first and second heat conduction paths.
However, although the technique disclosed in Patent Document 1 can improve the heat dissipation of the semiconductor device by its excellent thermal conductivity by mixing graphene particles in the sealing resin covering the semiconductor chip, graphene particles having excellent thermal conductivity are also excellent in electrical conductivity at the same time, and therefore when the mixing amount is increased, the problem arises that the insulation properties cannot be maintained. Therefore, in a high-integration semiconductor device that operates at a high frequency with a large amount of heat generation, its effect is limited, and it must be said that its heat dissipation performance is inferior to heat dissipation fins, heat pipes, and the like, and it cannot become the mainstream of heat dissipation devices of semiconductor devices.
In addition, the technique disclosed in Patent Document 2 has a first heat conduction path through which heat is sequentially conducted through the element holding member, the element connection substrate, and the heat dissipation member and is dissipated at the heat dissipation fin, and a second heat conduction path through which heat is transferred from the element holding member to the heat dissipation fin through the heat pipe and is dissipated at the heat dissipation fin, and the semiconductor light-emitting element can be efficiently cooled by heat dissipation using these first and second heat conduction paths.
However, in order to realize high cooling capacity, it is necessary to increase the surface area of the heat dissipation fin because the heat resistance of the heat dissipation fin needs to be reduced. For this reason, it is necessary to increase the height of the fin or increase the number of fins, resulting in a larger size than the main body portion of the semiconductor device.
In addition, it is necessary to increase a pipe diameter of the heat pipe in order to improve circulation of the cooling fluid moving in the heat pipe. Both of the cooling mechanisms need to be increased in size in order to realize high cooling capacity, and there is a problem that it is against miniaturization or height reduction of the semiconductor package.
The present disclosure has been made in view of the above-described problems, and an object of the present disclosure is to provide a cooling mechanism having a nanocapillary structure, a semiconductor device including the cooling mechanism, a method for manufacturing the same, and an electronic device, in which the conventional problems are solved by using a nanocapillary channel structure constituted by graphene for a cooling mechanism of a semiconductor chip.
The present disclosure has been made to solve the above-described problems, and a first aspect thereof is a cooling mechanism including: a first metal layer; a first graphene layer formed on the first metal layer and having a nanocapillary channel; a second graphene layer joined to an upper surface of the nanocapillary channel to form an opening of a passage for a refrigerant; and a second metal layer covering the second graphene layer.
In addition, a second aspect is a cooling mechanism including: a first metal layer; a first graphene layer formed on the first metal layer and having a nanocapillary channel; a second graphene layer bonded to an upper surface of the nanocapillary channel; and a second metal layer covering the second graphene layer having an opening penetrating both ends of the second graphene layer in a vertical direction and communicating with the nanocapillary channel.
In addition, in the first or second aspect, a plurality of the first graphene layer and the second graphene layer having the nanocapillary channel may be laminated between the first metal layer and the second metal layer.
In addition, in the first to third aspects, the second graphene layer and the second metal layer may have an air vent hole penetrating therethrough.
In addition, in the first to fourth aspects, the opening may have an inlet through which the refrigerant is sucked on one side and an outlet through which the refrigerant is discharged on another side, the inlet and the outlet protruding in a horizontal direction or erected upward.
In addition, a sixth aspect is a semiconductor device including a cooling mechanism including: a first metal layer; a first graphene layer formed on the first metal layer and having a nanocapillary channel; a second graphene layer joined to an upper surface of the nanocapillary channel to form an opening of a passage for a refrigerant; and a second metal layer covering the second graphene layer.
In addition, a seventh aspect is a semiconductor device including a cooling mechanism including: a first metal layer; a first graphene layer formed on the first metal layer and having a nanocapillary channel; a second graphene layer bonded to an upper surface of the nanocapillary channel; and a second metal layer covering the second graphene layer having an opening penetrating both ends of the second graphene layer in a vertical direction and communicating with the nanocapillary channel.
In addition, an eighth aspect is a semiconductor device including a cooling mechanism including: a first metal layer; a first graphene layer formed on the first metal layer and having a nanocapillary channel; a second graphene layer joined to an upper surface of the nanocapillary channel to form an opening of a passage for a refrigerant; and a second metal layer covering the second graphene layer, in which a plurality of the first graphene layer and the second graphene layer having the nanocapillary channel is laminated between the first metal layer and the second metal layer.
In addition, a ninth aspect is a semiconductor device including a cooling mechanism including: a first metal layer; a first graphene layer formed on the first metal layer and having a nanocapillary channel; a second graphene layer bonded to an upper surface of the nanocapillary channel; and a second metal layer covering the second graphene layer having an opening penetrating both ends of the second graphene layer in a vertical direction and communicating with the nanocapillary channel, in which a plurality of the first graphene layer and the second graphene layer having the nanocapillary channel is laminated between the first metal layer and the second metal layer.
In addition, in the sixth to ninth aspects, the opening of the cooling mechanism may have an inlet through which the refrigerant is sucked on one side and an outlet through which the refrigerant is discharged on another side, the inlet and the outlet protruding in a horizontal direction or erected upward.
In addition, an 11th aspect is a semiconductor device including: a cooling mechanism including: a first metal layer; a first graphene layer formed on the first metal layer and having a nanocapillary channel; a second graphene layer joined to an upper surface of the nanocapillary channel to form an opening of a passage for a refrigerant; and a second metal layer covering the second graphene layer; and a semiconductor chip surrounded by a partition wall and disposed in a hollow cavity formed by covering an upper surface of the cooling mechanism with a cover glass on the upper surface of the cooling mechanism.
In addition, in this 11th aspect, the partition wall may be configured to be air-permeable to an external space by the nanocapillary channel.
In addition, in the 11th or 12th aspect, the second graphene layer and the second metal layer covering the second graphene layer may have an air vent hole penetrating therethrough.
It is a method for manufacturing a cooling mechanism, the method including: forming a first graphene layer on a first copper plate; forming a nanocapillary channel in the first graphene layer; forming a second graphene layer on a second copper plate; and bonding a surface of the second graphene layer formed on the second copper plate to the nanocapillary channel formed in the first graphene layer.
In addition, a 15th aspect is a method for manufacturing a semiconductor device including a cooling mechanism, the method including: forming a first insulating layer on a first silicon or glass substrate; forming a first copper layer on the first insulating layer; forming a first graphene layer on the first copper layer to form a nanocapillary channel; forming an insulating layer on a second silicon or glass substrate; forming a second copper layer on the insulating layer; forming a second graphene layer on the second copper layer; bonding the nanocapillary channel formed on the first silicon or glass substrate and the second graphene layer formed on the second silicon or glass substrate; removing the first silicon or glass substrate; forming a first adhesive layer on a third glass substrate; rearranging a plurality of known good die (KGD) semiconductor chips on the first adhesive layer; filling the KGD semiconductor chips rearranged on the third glass substrate with a mold, flattening a surface of the semiconductor chips, and forming a second adhesive layer on the surface of the semiconductor chips; bonding a surface from which the first silicon or glass substrate has been removed to the second adhesive layer, and mounting the nanocapillary channel on the semiconductor chips filled with the mold; debonding and removing the third glass substrate; removing the second silicon or glass substrate; and dicing the semiconductor chips filled with the mold and the nanocapillary channel mounted on the semiconductor chips.
In addition, a 16th aspect is an electronic device including a semiconductor device using a cooling mechanism including: a first metal layer; a first graphene layer formed on the first metal layer and having a nanocapillary channel; a second graphene layer joined to an upper surface of the nanocapillary channel to form an opening of a passage for a refrigerant; and a second metal layer covering the second graphene layer.
By adopting the above aspects, it is possible to provide a cooling mechanism having cooling capability without violating miniaturization or height reduction of a semiconductor package, a semiconductor device including the cooling mechanism, a method for manufacturing the same, and an electronic device.
Next, modes for carrying out the technology according to the present disclosure (hereinafter, referred to as “embodiments”) will be described in the following order with reference to the drawings. Note that, in the following drawings, the same or similar parts are denoted by the same or similar reference numerals. In addition, since the drawings are schematic, some descriptions are omitted, and dimensional ratios and the like of respective parts do not necessarily coincide with actual ones. In addition, it is needless to say that the drawings include parts having different dimensional relationships and ratios.
Therefore, as illustrated in
Since the cooling mechanism 1 according to the present disclosure is configured as described above, for example, the cooling mechanism 1 can be used as a cooler of the semiconductor device 10 by being mounted on the semiconductor device 10 and connected to a cooling device 20 that performs cooling by circulating the refrigerant 21 or the like. The configuration of the cooling method is roughly classified into natural cooling and forced cooling, and liquid cooling type and air cooling type are considered as the forced cooling.
In the natural cooling, as illustrated in
In the case of forced cooling, the cooling mechanism 1 in which substantially cylindrical joints 7a and 8a are provided to protrude from the inlet 7 and the outlet 8 is used (see
For example, as illustrated in
Specifically, the refrigerant tank 22 that stores the refrigerant 21 is connected to the pump 23, and the pump 23 is connected to the inlet 7 of the cooling mechanism 1 by the joint 7a via a feed pipe 24. The outlet 8 of the cooling mechanism 1 is connected to the refrigerant tank 22 via the joint 8a and a return pipe 27. Note that the refrigerant 21 in the refrigerant tank 22 is cooled by a heat sink, a cooling fan, a radiator, or the like (not illustrated) and supplied to the cooling mechanism 1 by the pump 23. In addition, meters such as a filter, a flow meter, a thermometer, and a liquid level meter may be provided.
With the above configuration, the refrigerant 21 is supplied to the inlet 7 of the cooling mechanism 1 via the refrigerant tank 22, the pump 23, the feed pipe 24, and the joint 7a. The supplied refrigerant 21 is supplied from the inlet 7 to each nanocapillary channel 6 and moves in each nanocapillary channel 6. Here, since the graphene forming the nanocapillary channel 6 has a thermal conductivity about 10 times that of copper (details will be described later), heat generated by the semiconductor device 10 is accurately transferred to the refrigerant 21 and transferred to the refrigerant tank 22.
In addition, since the nanocapillary channel 6 is excellent in suction force of air, liquid, or the like due to a capillary phenomenon unique to graphene (see
For example, as illustrated in
Specifically, the blower 28 sucks air in the atmosphere and supplies the air to the inlet 7 of the cooling mechanism 1 via the feed pipe 24 and the joint 7a. The air which is the supplied refrigerant 21 is supplied from the inlet 7 to each nanocapillary channel 6 and passes through each nanocapillary channel 6. Here, since the graphene forming the nanocapillary channel 6 has excellent thermal conductivity, the graphene accurately transmits the heat generated by the semiconductor device 10 to the air, which is the refrigerant 21, and releases the heat to the atmosphere.
In addition, since the nanocapillary channel 6 is excellent in suction force of air, liquid, or the like due to a capillary phenomenon unique to graphene, the air as the refrigerant 21 moves through each nanocapillary channel 6 at a high speed. The air which is the refrigerant 21 having passed through each nanocapillary channel 6 is discharged to the atmosphere via the joint 8a of the outlet 8 of the cooling mechanism 1 and the return pipe 27. Hereinafter, similarly, the blower 28 continuously sends air to the nanocapillary channel 6 of the cooling mechanism 1.
In the case of the air cooling type, since air can be used as the refrigerant 21, there is an advantage that a particularly complicated device or special management is not required. Note that it is desirable to provide an air filter, a silencer in some cases, and the like in the air intake port and the air exhaust port. In addition, as the refrigerant 21, a helium-based rare gas can be used in addition to air. In this case, it is desirable to recover and circulate the gas.
With the above configuration, in the case of liquid cooling type, the refrigerant 21 is supplied to the inlet 7 of the cooling mechanism 1 via the refrigerant tank 22, the pump 23, the feed pipe 24, and the joint 7a. The supplied refrigerant 21 is supplied from the inlet 7 to each nanocapillary channel 6 and passes through each nanocapillary channel 6. Here, since the graphene forming the nanocapillary channel 6 has a thermal conductivity about 10 times that of copper, heat generated by the semiconductor device 10 can be accurately transferred to the refrigerant 21, and a temperature rise of the semiconductor device 10 can be suppressed.
In addition, in the case of air cooling type, for example, air is used as the refrigerant 21, so that the graphene forming the nanocapillary channel 6 accurately transmits the heat generated by the semiconductor device 10 to the air, and the temperature rise of the semiconductor device can be suppressed.
With such a configuration, the semiconductor device 10 can be cooled.
The graphene in the graphene layers 4 and 5 is a sheet-shaped substance of carbon atoms that forms hybrid orbitals in three directions of 120 degrees each called an sp2 bond having a thickness of one atom. Therefore, the graphene has a hexagonal lattice structure like a honeycomb constituted by carbon atoms and bonds thereof as illustrated in
When the thickness of the nanocapillary channel 6 formed between the graphene layers 4 and 5 is less than 2 nm, the velocity of water moving in the channel rapidly increases due to the capillary phenomenon unique to graphene. For example, in the case of a channel thickness of 1 nm and a width infinite (a width sufficiently large with respect to the channel thickness), the velocity of water moving in the channel is about 100 m/s as illustrated in
As described above, it can be seen that the nanocapillary channel 6 sucks water at a rapid speed when the thickness is 2 nm and the width is about the same.
Next, the opening diameter of the nanocapillary channel 6 will be described.
The fine particle “PM 2.5”, which has become a hot topic, has a diameter of 2.5 μm or less. The unit is “μ” (micro). On the other hand, since the opening diameter of the nanocapillary channel 6 is, for example, 2 nm×2 nm in the above example, it is about 1/1000 of the PM 2.5. Therefore, the PM 2.5 cannot pass through the opening of the nanocapillary channel 6 at all.
In addition, in a clean room for manufacturing a semiconductor, in the case of Class 1, fine particles of 0.1 μm or more contained in 30 liters of air are 1 or less. Since 0.1 μm is 100 nm, it is about 50 times the opening diameter of the nanocapillary channel 6. Therefore, it is considered that the fine particles that can pass through the opening of the nanocapillary channel 6 do not significantly affect the characteristics of the semiconductor and the like.
As described above, the nanocapillary channel 6 formed in the graphene layer is excellent in the following points in application to the semiconductor device 10.
(1) The thermal conductivity is about 10 times that of copper, and the thermal conductive performance is extremely excellent.
(2) An excellent suction force of air, liquid, and the like is obtained by a capillary phenomenon unique to graphene.
(3) The extremely fine opening diameter prevents passage of fine particles.
The cooling mechanism 1 of the embodiment according to the present disclosure has been made focusing on such excellent characteristics. According to the present disclosure, as described above, the refrigerant 21 moves at a high speed in each nanocapillary channel 6, and the graphene forming the nanocapillary channel 6 has a thermal conductivity about 10 times that of copper, and thus, heat can be accurately transferred to the refrigerant 21, and a temperature rise of the semiconductor device 10 can be suppressed. Hereinafter, each embodiment will be described.
Next, a method for manufacturing the cooling mechanism 1 according to the first embodiment will be described.
First, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the front external view of
In addition, as illustrated in the front external view of
By having the above steps, the cooling mechanism 1 according to the first embodiment can be manufactured.
The internal configuration of the cooling mechanism 1 in the width direction is similar to the case of
As a result, liquid cooling or air cooling by the refrigerant 21 can be performed. That is, when the refrigerant 21 is sucked from the joint 7a of the inlet 7, the refrigerant 21 passes through the nanocapillary channel 6 and is discharged from the joint 8a of the outlet 8. Configurations other than the above are the same as those of the basic configuration example of the cooling mechanism 1 illustrated in
As illustrated in
In addition, as illustrated in
In the present embodiment, since the joint 7a and the joint 8a are erected on the upper surface of the cooling mechanism 1, the feed pipe 24 and the return pipe 27 connected to the refrigerant tank 22, the pump 23, or the blower 28 can be pulled out upward. Therefore, since it is not necessary to perform piping in the lateral direction, it is not necessary to take a space for piping on the printed circuit board in the case of being mounted on the semiconductor device 10 mounted on the printed circuit board (not illustrated), and downsizing of the printed circuit board can be realized.
Next, a method for manufacturing the cooling mechanism 1 according to the second embodiment will be described.
First, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, the copper plate 3 on which the graphene layer 5 is separately formed in
Next, as illustrated in the X cross-sectional view of
In addition, as illustrated in
By having the above steps, the cooling mechanism 1 according to the second embodiment can be manufactured. In the manufacturing method according to the present embodiment, the components of the inlet 7 and the outlet 8 are only required to be stacked in order on the upper surface of the copper plate 3 with the protective film 9 interposed therebetween to be assembled, so that there is an advantage that the operation content is clear and the operation is easy.
Since the cooling mechanism 1 according to the present disclosure is configured as described above, natural cooling by natural ventilation can be performed.
In addition, as illustrated in
In addition, in the case of forced cooling, the joints 7a and 8a may be protruded or erected on the inlet 7 and the outlet 8 (see
In the case of the liquid cooling type of forced cooling, for example, it is preferable to connect to the cooling device 20 as illustrated in
Since the cooling mechanism 1 according to the present disclosure is configured as described above, the cooling mechanism 1 can cool the semiconductor device 10 by being mounted on the semiconductor device 10 and connecting to the cooling device 20 to circulate the refrigerant 21 as described above. This point is similar to that of the first embodiment and the second embodiment, and thus the description thereof will be omitted.
As described above, in the present embodiment, the circulation amount of the refrigerant 21 can be increased by forming the wide nanocapillary channels 6 in multiple layers. As a result, it is possible to more accurately transmit a large amount of heat to the refrigerant 21 and suppress a temperature rise of the semiconductor device 10.
Next, a method for manufacturing the cooling mechanism 1 according to the third embodiment will be described.
First, the copper plate 2 is prepared as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Hereinafter, by repeating similar steps, the wide nanocapillary channels 6 are sequentially layered on the wide nanocapillary channels 6 formed on the graphene sheet 4S on the copper plate 2.
As a result, as illustrated in the X cross-sectional view of
In addition, the graphene sheet 5S is bonded onto the copper plate 3 by the steps illustrated in
By the manufacturing process as described above, four main body portions of the cooling mechanism 1 are formed. Therefore, as illustrated in the plan view of
Next, as illustrated in
In addition, similarly to the second embodiment, the inlet 7 and the outlet 8 may be formed by providing the vent holes 7d and 8d in the wide nanocapillary channels 6 formed in multiple layers and mounting and fixing the lids 7b and 8b provided with the openings 7c and 8c in the horizontal direction on the respective upper surfaces of the vent holes 7d and 8d in the front surface direction and the back surface direction.
In addition, a step of attaching the inlet 7 and the outlet 8 (see
By having the above steps, the cooling mechanism 1 according to the third embodiment can be manufactured. In the manufacturing method according to the present embodiment, since the multilayer nanocapillary channel 6 having a wide width is formed and laminated, it is not necessary to form the nanocapillary channel 6 having a narrow width. The process can be simplified.
The difference in configuration between a cooling mechanism 1 according to a fourth embodiment and the first embodiment and the second embodiment is that, as illustrated in the plan view of
As illustrated in the external perspective views of
Alternatively, similarly to
The flow of the refrigerant 21 by providing the air vent hole 33 as illustrated in
The refrigerant 21 entering from the inlet 7 moves in the nanocapillary channel 6 and is discharged from the outlet 8 similarly to the case of the first embodiment. However, since the air vent hole 33 is provided in the copper plate 3 and the graphene layer 5 on the upper surface, in a case where a space such as a hollow cabin is formed on the copper plate 3, the space and the path of the refrigerant 21 communicate with each other. Then, the space such as a hollow cabin communicates with an external space via the nanocapillary channel 6, so that so-called “breathing” is possible.
Hereinafter, a specific configuration example will be described.
In the drawing, a wiring layer 42 is disposed on the cooling mechanism 1 with a protective film 9 interposed therebetween, and a semiconductor chip 11 is bonded to a substantially central portion of the wiring layer 42. The BGA disposed on the lower surface of the semiconductor chip 11 is electrically connected to a predetermined pad of the wiring layer 42. In addition, a rewiring layer 43 is disposed on the peripheral surface of the semiconductor chip 11, and a predetermined pad of the semiconductor chip 11 and a predetermined pad of the rewiring layer 43 are wire-bonded by, for example, a gold wire 11a to form a circuit.
A frame 44 is bonded to the upper surface of the rewiring layer 43 with a frame mount sealing resin 45, and surrounds the rewiring layer 43 as illustrated in the plan view of
As described above, the package of the semiconductor device 10 has a hollow cavity structure. That is, the hollow cavity 48 has an airtight structure so that dust, moisture, and the like do not enter the hollow cavity. However, when such an airtight structure is configured, there is a concern that the air in the hollow cavity 48 expands and the internal pressure rises at a high temperature, and a stress is applied to each bonding portion to cause a problem such as peeling. For example, when the substrate is mounted on a printed circuit board, if the substrate is passed through a reflow furnace for reflow soldering, the substrate may be temporarily exposed to a high temperature of 260° C. for a short time. In such a case, since the internal pressure in the hollow cavity 48 rapidly increases, the sealing material needs to withstand this. In addition, there is a concern that moisture accumulates (hardly escapes) and dew condensation or fogging occurs in a high-humidity environment, and the function of the solid-state imaging device is lost.
The present embodiment has been made by particularly focusing on the point that “(3) it prevents passage of fine particles since it has an extremely fine opening diameter”, which is a feature of the nanocapillary channel constituted by the graphene. Specifically, as illustrated in
In addition, by forming the air vent hole 33 as a breathing hole between the hollow cavity 48 and the external space via the nanocapillary channel 6, the following innovative effect is obtained.
(1) Since breathing is possible between the hollow cavity 48 and the external space, air and moisture inside the hollow cavity 48 can be directly discharged to the outside, and peeling, warpage, and the like due to condensation prevention and internal pressure expansion are suppressed.
(2) Since the nanocapillary channel 6 has an extremely fine opening diameter, there is no concern about dust having a size that causes a defect in a solid-state imaging device.
(3) Since it is not necessary to consider moisture permeability, the degree of freedom in selecting characteristics, sizes, shapes, and the like of the frame mount sealing resin 45, the sealing glass resin 47, and the like increases.
That is, conventionally, there are various restrictions on the selection of the sealing resin, but since it is not necessary to consider moisture permeability, these restrictions are removed. In addition, conventionally, when the cover glass 46 is bonded and sealed, it has been necessary to tune temperature, humidity, atmospheric pressure, and the like, but such restrictions on quality control can also be relaxed. Further, the frame 44 can be downsized, and the spreading effect is extremely remarkable. Note that, in a case where the air vent hole 33 is used as a breathing hole, the air vent hole is only required to be disposed anywhere and it is only required to be determined from the entire layout.
Next, a method for manufacturing the cooling mechanism 1 according to the fourth embodiment will be described.
The method for manufacturing the cooling mechanism 1 according to the present embodiment is different from the method for manufacturing the cooling mechanism 1 according to the first embodiment and the second embodiment in that, as illustrated in the plan view of
That is, in the steps illustrated in
Alternatively, in the steps illustrated in
Since the manufacturing process other than the above is similar to the method for manufacturing the cooling mechanism 1 according to the first embodiment or the second embodiment, the description thereof will be omitted.
Next, a method for manufacturing the semiconductor device 10 on which the cooling mechanism 1 according to the first embodiment is mounted will be described.
First, a first insulating layer 15 is formed on silicon or a first glass substrate 14 as illustrated in an X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as separately illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, in
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
Next, as illustrated in the X cross-sectional view of
In addition, as illustrated in
Through the above steps, the semiconductor device 10 on which the cooling mechanism 1 according to the first embodiment is mounted can be manufactured.
Next, a method for manufacturing the semiconductor device 10 on which the cooling mechanism 1 according to the second embodiment is mounted will be described. The method for manufacturing the cooling mechanism 1 according to the present embodiment is different from the method for manufacturing the cooling mechanism 1 according to the first embodiment in that, as illustrated in
Next, a method for manufacturing the semiconductor device 10 on which the cooling mechanism 1 according to the third embodiment is mounted will be described. First, the method for manufacturing the cooling mechanism 1 used in the present embodiment is as described above with reference to
Since the points other than the above are similar to the method for manufacturing the semiconductor device 10 on which the cooling mechanism 1 according to the first embodiment is mounted, the description thereof will be omitted.
Next, a method for manufacturing the semiconductor device 10 using the cooling mechanism 1 according to the fourth embodiment will be described. First, the method for manufacturing the cooling mechanism 1 used in the present embodiment is as described above in <8. Example of Method for Manufacturing Cooling Mechanism According to Fourth Embodiment>. However, in order to increase the mass production effect, as described above in <9. Example of Method for Manufacturing Semiconductor Device Equipped With Cooling Mechanism According to First Embodiment>, silicon or the first to third glass substrates 14 may be used instead of the copper plates 2 and 3 to form the copper layers 12 and 13. Note that, in a case where the glass substrate 14 is used, all the substrates are removed at the time of dicing as described above.
Next, a method for manufacturing the semiconductor device 10 using the cooling mechanism 1 will be described. The semiconductor device 10 according to the present embodiment is suitable for a solid-state imaging device of an FBGA package adopting wire bonding connection.
First, as illustrated in an X cross-sectional view of
Next, as illustrated in both the drawings, the protective film 9 is formed on the copper plate 3 on the cooling mechanism 1, and the wiring layer 42 is disposed thereon.
Next, as illustrated in an X cross-sectional view of
On the upper surface of the rewiring layer 43, as illustrated in the X cross-sectional view of
By having the above steps, the semiconductor device 10 using the cooling mechanism 1 according to the fourth embodiment can be manufactured. In the semiconductor device 10 using the cooling mechanism 1 manufactured according to the present embodiment, as illustrated in the plan view of
However, in the semiconductor device 10 using the cooling mechanism 1 according to the fourth embodiment, as illustrated in
That is,
(1) since breathing is possible between the hollow cavity 48 and the external space, air and moisture inside the hollow cavity 48 can be directly discharged to the outside, and peeling, warpage, and the like due to condensation prevention and internal pressure expansion are suppressed.
(2) Since the nanocapillary channel 6 has an extremely fine opening diameter, there is no concern about dust having a size that causes a defect in a solid-state imaging device.
(3) Since it is not necessary to consider moisture permeability, the degree of freedom in selecting characteristics, sizes, shapes, and the like of the frame mount sealing resin 45, the sealing glass resin 47, and the like increases.
Specifically, conventionally, there have been various restrictions on the selection of the sealing resin, but since it is not necessary to consider moisture permeability, these restrictions are removed. In addition, when the cover glass 46 is sealed, it has been necessary to tune temperature, humidity, atmospheric pressure, and the like, but such restrictions on quality control can also be relaxed. Furthermore, the frame 44 can be downsized, and the above-described innovative effect is obtained.
Next, another embodiment of the semiconductor device 10 using the cooling mechanism 1 according to the present disclosure will be described. In the present embodiment, in addition to mounting the semiconductor device 10 on the cooling mechanism 1 according to the present disclosure, for example, the nanocapillary channel 6a is further inserted between the rewiring layer 43 and the frame 44 of the semiconductor device 10, or the nanocapillary channel 6a is embedded in the frame 44.
Specifically, as illustrated in the Y cross-sectional view of
In addition, as illustrated in
In addition, the nanocapillary channel 6a may be inserted between the rewiring layer 43 and the frame 44 in a state where the air vent hole 33 in the configuration of
In this case, air is blown from the inlet 7 to the nanocapillary channel 6 disposed below the semiconductor chip 11 by the blower 28, and the heat generated by the semiconductor chip 11 is discharged from the outlet 8 to the outside. In addition, a part of the air passing through the nanocapillary channel 6 is injected into the hollow cavity 48 through the air vent hole 33, and the high-temperature air in the hollow cavity 48 is discharged from the nanocapillary channel 6a to the external space, so that the effect of suppressing the temperature rise of the semiconductor chip 11 is obtained.
Note that, in this case, it is not preferable to use water as the refrigerant 21 because the inside of the hollow cavity 48 is immersed in water.
In addition, in the case of natural cooling, when the temperature in the hollow cavity 48 rises, the warmed air rises and is discharged to the external space via the nanocapillary channel 6a, and instead, low-temperature air enters the hollow cavity 48 from the air vent hole 33. Therefore, an air flow is formed, and an effect of suppressing a temperature rise of the semiconductor chip 11 is obtained.
With the above configuration, it is possible to simultaneously suppress both the temperature rise of the semiconductor device 10 and the internal pressure rise in the hollow cavity 48. The temperature rise of the semiconductor device 10 and the suppression of the internal pressure rise in the hollow cavity 48 are long-standing concerns in the semiconductor device 10 having the hollow cavity 48 such as a solid-state imaging device. According to the technology of the present disclosure, it is possible to solve each of these problems, and thus, an extremely remarkable effect is obtained.
Note that the cooling mechanism 1 used in the present embodiment may be any one of the first to fourth embodiments described above.
As an example of the semiconductor device 10 including the cooling mechanism 1 having the nanocapillary structure according to the above-described embodiments, an example in which a solid-state imaging device 201 including the cooling mechanism 1 is applied to an electronic device will be described with reference to
The solid-state imaging device 201 is applicable to all electronic devices using an image capturing unit (photoelectric conversion unit), such as an imaging device such as a digital still camera or a video camera, a mobile terminal device having an imaging function, and a copying machine using a solid-state imaging element for an image reading unit. The solid-state imaging device 201 may be formed as one chip, or may be in the form of a module having an imaging function in which an imaging unit and a signal processing unit or an optical system are packaged together.
As illustrated in
The optical unit 202 includes a plurality of lenses, and captures incident light (image light) from a subject to form an image on an imaging surface of the solid-state imaging device 201. The solid-state imaging device 201 converts the light amount of the incident light imaged on the imaging surface by the optical unit 202 into an electrical signal in units of pixels and outputs the electrical signal as a pixel signal.
The display unit 205 includes, for example, a panel type display device such as a liquid crystal panel or an organic electro luminescence (EL) panel, and displays a moving image or a still image captured by the solid-state imaging device 1. The recording unit 206 records the moving image or the still image captured by the solid-state imaging device 201 on a recording medium such as a hard disk or a semiconductor memory.
The operation unit 207 issues operation commands for various functions of the imaging device 200 under operation by the user. The power supply unit 208 appropriately supplies various power sources serving as operation power sources of the DSP circuit 203, the frame memory 204, the display unit 205, the recording unit 206, and the operation unit 207 to these supply targets.
According to the imaging device 200 as described above, in the solid-state imaging device 201, since breathing is possible between the hollow cavity 48 and the external space, it is possible to directly release the air and moisture inside the hollow cavity 48 to the outside, and it is possible to suppress a temperature rise, prevent dew condensation, suppress peeling, warpage, and the like due to internal pressure expansion to improve quality. In addition, since restrictions on manufacturing and quality control are also reduced, manufacturing cost can be reduced, and an inexpensive electronic device can be provided.
The description of the above-described embodiments is an example of the present technology, and the present technology is not limited to the above-described embodiments. For this reason, it is needless to say that various modifications other than the above-described embodiments can be made according to the design and the like without departing from the technical idea according to the present disclosure.
In addition, the effects described in the present specification are merely examples and are not limited, and other effects may be provided. In addition, the configurations of the above-described embodiments can be combined in any manner. Therefore, the configuration examples described in the present specification are merely examples, and are not limited to the configuration example of the present description.
Note that the present technology can have the following configurations.
(1)
A cooling mechanism including:
A cooling mechanism including:
The cooling mechanism according to (1) or (2), in which a plurality of the first graphene layer and the second graphene layer having the nanocapillary channel is laminated between the first metal layer and the second metal layer.
(4)
The cooling mechanism according to any one of (1) to (3), in which the second graphene layer and the second metal layer have an air vent hole penetrating therethrough.
(5)
The cooling mechanism according to any one of (1) to (4), in which the opening has an inlet through which the refrigerant is sucked on one side and an outlet through which the refrigerant is discharged on another side, the inlet and the outlet protruding in a horizontal direction or erected upward.
(6)
A semiconductor device including
A semiconductor device including
A semiconductor device including
A semiconductor device including
The semiconductor device according to any one of (6) to (9), in which the opening of the cooling mechanism has an inlet through which the refrigerant is sucked on one side and an outlet through which the refrigerant is discharged on another side, the inlet and the outlet protruding in a horizontal direction or erected upward.
(11)
A semiconductor device including:
The semiconductor device according to (11), in which the partition wall is configured to be air-permeable to an external space by the nanocapillary channel.
(13)
The semiconductor device according to (11) or (12), in which the second graphene layer and the second metal layer covering the second graphene layer have an air vent hole penetrating therethrough.
(14)
A method for manufacturing a cooling mechanism, the method including:
A method for manufacturing a semiconductor device including a cooling mechanism, the method including:
An electronic device including
| Number | Date | Country | Kind |
|---|---|---|---|
| 2020-208032 | Dec 2020 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2021/044272 | 12/2/2021 | WO |
