Claims
- 1. A crystal growth method for growing a nitride semiconductor crystal on a sapphire substrate in a vapor phase, the method comprising the steps of:providing a sapphire substrate having a substrate orientation inclined by about 0.05° to about 0.2° from a <0001> orientation; and allowing a nitride semiconductor crystal to grow on the surface of the sapphire substrate.
- 2. A method according to claim 1, wherein the substrate orientation is inclined from the <0001>orientation toward a <11-20>orientation or a <1-100>orientation.
- 3. A method according to claim 1, wherein an average surface roughness of the grown nitride semiconductor crystal layer is less than about 1.8 mm.
- 4. A method according to claim 3, wherein a quantum well layer is formed on the surface of nitride semiconductor crystal layer.
- 5. A method for producing a nitride semiconductor light emitting device, the method comprising the steps of:providing a sapphire substrate having a substrate orientation inclined by about 0.05° to about 0.2° from a <0001>orientation; and providing a layered structure on the sapphire substrate, the layered structure including a quantum well active layer interposed between layers which have conductivity types different from each other.
- 6. A method according to claim 5 wherein an average surface roughness of the lower surface of the quantum well active layer is less than about 1.8 mm.
- 7. A method according to claim 5, wherein an average surface roughness of the lower surface of the quantum well active layer is less than a thickness of the quantum well active layer.
- 8. A method according to claim 5, wherein the quantum well active layer comprises InGaN.
- 9. A method according to claim 5, wherein the substrate orientation is inclined from the <001> orientation toward a <11-20> orientation or a <1-100> orientation.
- 10. A crystal growth method for growing a nitride semiconductor crystal on a sapphire substrate in a vapor phase, the method comprising the steps of:providing the sapphire substrate having a substrate orientation inclined by about 0.05° to about 0.2° from a <0001> orientation, and formed on its surface a construction of steps-type each step having a size of several tens A order; and allowing multiple-layers of i-type, n-type or p-type nitride semiconductor crystal to grow integratedly on the surface of the sapphire substrate.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-179899 |
Jun 1998 |
JP |
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CROSS-REFERENCE TO RELATED APPLICATION
This application is a divisional of patent application Ser. No. 09/344,218, filed Jun. 25, 1999, now U.S. Pat. No. 6,252,255.
US Referenced Citations (5)
Foreign Referenced Citations (2)
Number |
Date |
Country |
57-27999 |
Feb 1982 |
JP |
09023026 |
Jan 1997 |
JP |