1. Field of the Invention
The present invention is directed to a cylinder-based vacuum processing system and a method of making the same, and, in one embodiment, to a tubing or rolled ring forging-based chamber wall.
2. Discussion of the Background
Known manufacturers have traditionally built process chambers and robotic transfer chambers of plasma processing systems from billets of material, i.e. blocks of aluminum. Those chambers are built at considerable cost due to both the cost of the original material and the cost of machining. In fact, a large portion of the original material often becomes waste in the machining process. For example, the total cost for manufacturing a chamber suitably sized for 200 mm substrate processing can exceed $25K when using the aforementioned fabrication practices.
Accordingly, it is an object of the present invention to provide a method of manufacturing those chambers that reduces their costs. This object and other objects of the present invention are addressed by utilizing separately formed wall and end pieces instead of machining out a solid billet of material. In one such embodiment, the chamber walls are formed from the inner wall of a tubing or forging, and the top of the tubing or forging is smoothed to allow O-ring sealing (e.g., to standard smooth plates that are separately manufactured).
A more complete appreciation of the invention and many of the attendant advantages thereof will be readily obtained as the same becomes better understood by reference to the following detailed description when considered in connection with the accompanying drawings, wherein:
Turning now to
In order to provide a good seal, preferably O-rings 26 are placed between the cylinder and the plates. The components are then held together using a series of fasteners.
As shown in
In light of the fact that the chamber wall 20 is so easily accessible and cost effective, it is possible to build the chamber 10 with a chamber wall 20 comprising a “protective” or “sacrificial” layer 40 as shown in
In an alternate embodiment, the process liner 40 is separate from the chamber wall and comprises a replaceable consumable to be inserted within the inner diameter of chamber wall 20. The process liner 40 can be fabricated from silicon, silicon carbide, carbon, quartz, or any other conventionally employed material.
In an alternate embodiment (not shown), the top plate 22 is not bolted on to the top of the chamber wall 20, but is rather connected by a hinge and a latch. In this configuration, the top of the chamber 10 can be accessed quickly such that components therein (e.g., the chamber liner 40) can be maintained or replaced. In such an embodiment, the bottom plate 24 may be attached to the bottom of the chamber wall using bolts that screw into threads machined into chamber wall 20. Similarly, the hinge may be bolted to the chamber wall using threads formed in the chamber wall 20. Alternatively, like the embodiment of
In an alternate embodiment, grounding components are also placed between the chamber wall 20 and the plates 22, 24 so as to ensure proper grounding. These elements can be added at the same time that the O-rings are added. An exemplary element utilized to improve the electrical connection between chamber components includes Spira-Shield®.
As described above, the fasteners 30 clamping the top 22 and bottom 24 plates to the chamber wall 20 need not be run in channels machined into the chamber wall. It is, however, possible to do so, but would likely require an increased time and/or expense. If machining in the chamber walls 20 is performed, the channels created can be used for any number of functions. One such function is to provide temperature control of the chamber wall 20. Either coolant can be run through the channels or heating coils can be placed therein. In either configuration, the target temperature of the chamber wall 20 is monitored, and the heating and/or cooling is controlled accordingly.
In a preferred embodiment, the vacuum processing system 1 is a plasma processing system for materials processing of a substrate 50 (e.g., a semiconductor wafer or a liquid crystal display panel). As shown in
In light of the relatively fast assembly process, it is possible to quickly change the chamber height when changing between processes or wafer sizes. By replacing a shorter chamber wall 20 with a longer chamber wall 20 (or vice versa), the height-to-diameter ratio is easily changed. In addition, as shown in
Chambers 10 according to the present invention are not limited to the capacitively coupled plasma reactors as shown in
Numerous modifications and variations of the present invention are possible in light of the above teachings. It is therefore to be understood that, within the scope of the appended claims, the invention may be practiced otherwise than as specifically described herein.
Filing Document | Filing Date | Country | Kind | 371c Date |
---|---|---|---|---|
PCT/US02/11875 | 5/7/2002 | WO | 00 | 4/1/2004 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO02/093605 | 11/21/2002 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
3741886 | Urbanek et al. | Jun 1973 | A |
4253417 | Valentijn | Mar 1981 | A |
4512790 | Faure et al. | Apr 1985 | A |
4556471 | Bergman et al. | Dec 1985 | A |
5091208 | Pryor | Feb 1992 | A |
5336324 | Stall et al. | Aug 1994 | A |
5520142 | Ikeda et al. | May 1996 | A |
5544618 | Stall et al. | Aug 1996 | A |
5641358 | Stewart | Jun 1997 | A |
5676757 | Ikeda et al. | Oct 1997 | A |
6055927 | Shang et al. | May 2000 | A |
6073576 | Moslehi et al. | Jun 2000 | A |
6331212 | Mezey, Sr. | Dec 2001 | B1 |
6338872 | Yoshino et al. | Jan 2002 | B1 |
6551406 | Kilpi | Apr 2003 | B2 |
6734947 | Watson et al. | May 2004 | B2 |
20040149210 | Fink | Aug 2004 | A1 |
Number | Date | Country | |
---|---|---|---|
20040149210 A1 | Aug 2004 | US |
Number | Date | Country | |
---|---|---|---|
60291337 | May 2001 | US |