Patent Grant
8227771
The present invention relates to a debris prevention system, and lithographic apparatus that includes a debris prevention system. More specifically, the present invention relates to a debris intercepting system for intercepting contaminant material coming from a debris generating foil trap.
A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g. comprising part of, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.
In addition to EUV radiation, radiation sources used in EUV lithography generate contaminant material that may be harmful for the optics and the working environment in which the lithographic process is carried out. Hence, in EUV lithography, a desire exists to limit the contamination of the optical system that is arranged to condition the beams of radiation coming from an EUV source. To this end, it is known to use a so-called rotating foil trap, for example, as disclosed in U.S. Pat. No. 6,838,684. A foil trap uses a high number of closely packed foils aligned generally parallel to the direction of the radiation generated by the EUV source. Contaminant debris, such as micro-particles, nano-particles and ions may be intercepted by the rotating foil plates. Thus, the foil trap functions as a contamination barrier intercepting contaminant material from the source. However, the rotating foil trap may introduce a risk of secondary contamination of the system.
It is desirable to reduce the risk of secondary contamination in the presence of a rotating foil trap.
According to an aspect of the invention, there is provided a debris prevention system that is constructed and arranged to prevent debris emanating from a radiation source from propagating with radiation from the radiation source into or within a lithographic apparatus. The debris prevention system includes a first foil trap that is rotatable around an axis of rotation, and a second foil trap that at least partly encloses the first foil trap. The second foil trap includes a plurality of foils optically open respective to a central location for placement of a radiation source and optically closed respective to directions perpendicular to the axis of rotation.
According to an aspect of the invention, there is provided a lithographic apparatus that includes an illumination system configured to condition a radiation beam, and a support constructed to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The apparatus also includes a substrate table constructed to hold a substrate, a projection system configured to project the patterned radiation beam onto a target portion of the substrate, and a debris prevention system configured to provide the radiation beam. The debris prevention system is constructed and arranged to prevent debris emanating from a radiation source from propagating with radiation from the radiation source into or within the lithographic apparatus. The debris prevention system includes a first foil trap rotatable around an axis of rotation, and a second foil trap that at least partly encloses the first foil trap. The second foil trap includes a plurality of foils optically open respective to a central location for placement of a radiation source and optically closed respective to directions perpendicular to the axis of rotation.
Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
The support structure supports, i.e. bears the weight of, the patterning device. It holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The support structure may be a frame or a table, for example, which may be fixed or movable as desired. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”
The term “patterning device” used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam, which is reflected by the mirror matrix.
The term “projection system” used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system.”
As here depicted, the apparatus is of a reflective type (e.g. employing a reflective mask). Alternatively, the apparatus may be of a transmissive type (e.g. employing a transmissive mask).
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
Referring to
In some instances, in accordance with embodiments of the invention, the source may comprise a discharge produced or laser produced plasma source. In particular, the source may comprise a discharge source for generating extreme ultraviolet radiation. In some instances, the discharge source may comprise a pair of electrodes to be provided with a voltage difference and a system for producing a discharge between the pair of electrodes. That is, circuitry may be provided to generate a discharge for providing a pinched plasma in a central area between the electrodes. In accordance with these embodiments, the plasma source may comprise tin, lithium or xenon.
The illuminator IL may comprise an adjuster for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may comprise various other components, such as an integrator and a collector. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
The radiation beam B is incident on the patterning device (e.g., mask MA), which is held on the support structure (e.g., mask table MT), and is patterned by the patterning device. Having traversed the mask MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and position sensor IF2 (e.g. an interferometric device, linear encoder or capacitive sensor), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor IF1 can be used to accurately position the mask MA with respect to the path of the radiation beam B, e.g. after mechanical retrieval from a mask library, or during a scan. In general, movement of the mask table MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM. Similarly, movement of the substrate table WT may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the mask table MT may be connected to a short-stroke actuator only, or may be fixed. Mask MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks). Similarly, in situations in which more than one die is provided on the mask MA, the mask alignment marks may be located between the dies.
The depicted apparatus could be used in at least one of the following modes:
1. In step mode, the mask table MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e. a single static exposure). The substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
2. In scan mode, the mask table MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the mask table MT may be determined by the (de-) magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
3. In another mode, the mask table MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as desired after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
Turning to
The rotatable foil trap 2 can be further of a conventional type for example as disclosed in U.S. Pat. No. 6,838,684 incorporated herein by reference. Further away from the source 7, a collector 11 is schematically illustrated. The collector 11 receives extreme ultraviolet radiation radiated from the source 7. The collector can be of a conventional type for example a grazing incidence type or a normal incidence type. In one aspect of the embodiment a second foil trap 4 is arranged in an optical path between the rotating foil trap 2 and the collector 11. The second foil trap 4 or barrier is defined by a plurality of static foils 6, which are preferably aligned in a generally radial direction respective to the central source location 7 of the radiation source 1.
Here “generally” radial means that from a geometric center formed by the source location the foil planes are coincident with any of radial lines. However, “generally radial” may also be understood as an alignment wherein the foils are placed under a very small angle, for instance to provide a grazing incidence type of foil trap. This latter embodiment may provide a benefit of focusing extreme ultraviolet radiation.
Without intercepting, particles caught by the rotating foil trap 2, due to centrifugal action on these particles may be re-emitted and may contaminate the collector 11. The second foil trap 4 according to this invention functions to intercept debris emitted from the rotating foil trap 2, which allows the collector 11 (or any other component to be kept free from micro particles) to be placed much closer to the source and still be protected against particles emitted by the rotating foil trap.
In
A construction of the second foil trap 4 can be described as follows. From an outer most point of the collector 11, a line (L1 in
An optical axis 5 of a collector 11 is, according to this embodiment, generally arranged in a plane parallel to centrifugal directions of debris emitted from the foil trap 20.
Accordingly, debris that is re-emitted from the foil trap 20 may contaminate the system in down stream direction.
Although other types of interceptive arrangements can be provided, typically, according to an embodiment of the invention, here, also a second generally stationary foil trap can be provided that is aligned in a radial direction respective to a central location 7 of the radiation source. In particular this second foil trap 40 also comprises a plurality of foils 60. The orientation of the foils can be generally the same as in the
In an embodiment, both the
Accordingly, the embodiment of
For instance, the collector may be physically separated by a separation wall from the foil trap 2 during cleaning. The cleaning system 9 preferably comprises an outlet channel 8 arranged near the lowest point of the second foil trap in the direction of gravity. In this way, during use, collected debris may flow to a lowest point and leak out of the foil trap into the outlet channel 8. The cleaning system can be comprised of a wiper 10 or a nozzle, arranged to direct a cleaning substance such as halogens, hydrogen or hydrogen radicals referenced above. The rotation frequency is preferably kept relatively low, for instance in a range between about 0.1 Hz and about 10 Hz.
For a typical configurations having a half-angle of α=85°, the foil trap radius r1=60 mm, the radius of the second foil trap 4=20 mm, and a thickness of foils 6=0.1 mm, nearly 8 foils are used, barely influencing an optical transmittance.
In comparison with the
Although in the
Although specific reference may have been made above to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, for example imprint lithography, and where the context allows, is not limited to optical lithography. In imprint lithography a topography in a patterning device defines the pattern created on a substrate. The topography of the patterning device may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. The patterning device is moved out of the resist leaving a pattern in it after the resist is cured.
Further although the invention has been primarily explained with reference to a radiation system as a separate embodiment, it may be integral to the lithographic apparatus. The lithographic apparatus further typically and preferably comprises a collector element discussed here above for receiving and collecting extreme ultraviolet radiation generating from the radiation system. Thus, the collector element will define a collection angle. The debris intercepting system according to the invention is typically arranged between the rotating foil trap and the collector element. Further typically the collector element may be cylindrically symmetric and be comprised of concentrically curved reflecting surfaces, which provide a grazing incidence reflection for extreme ultraviolet radiation. These surfaces may be stacked at distances ranging substantially between about 2 and about 7 centimeters in alternative embodiments the collector element can be of a normal incidence type known in the art.
Further it has been shown that the debris prevention system according to the invention can be used as a separate system but also can be used as an element in a lithographic apparatus. Accordingly a lithographic apparatus has been demonstrated comprising illumination system configured to condition a radiation beam.
A support may be constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. In addition, a substrate table may be constructed to hold a substrate and a projection system may be configured to project the patterned radiation beam onto a target portion of the substrate. In this lithographic apparatus, preferably, the debris prevention system according to the above described embodiment is provided.
The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of or about 365, 355, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
The term “lens”, where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.
While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. For example, the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (e.g. semiconductor memory, magnetic or optical disk) having such a computer program stored therein.
The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.
| Number | Name | Date | Kind |
|---|---|---|---|
| 6064072 | Partlo et al. | May 2000 | A |
| 6172324 | Birx | Jan 2001 | B1 |
| 6389106 | Neff et al. | May 2002 | B1 |
| 6414438 | Borisov et al. | Jul 2002 | B1 |
| 6452199 | Partlo et al. | Sep 2002 | B1 |
| 6541786 | Partlo et al. | Apr 2003 | B1 |
| 6566667 | Partlo et al. | May 2003 | B1 |
| 6566668 | Rauch et al. | May 2003 | B2 |
| 6586757 | Melnychuk et al. | Jul 2003 | B2 |
| 6788763 | Neff et al. | Sep 2004 | B1 |
| 6815700 | Melnychuk et al. | Nov 2004 | B2 |
| 6815900 | Ahmad et al. | Nov 2004 | B2 |
| 6838684 | Bakker et al. | Jan 2005 | B2 |
| 6885015 | Wester | Apr 2005 | B2 |
| 6972421 | Melnychuk et al. | Dec 2005 | B2 |
| 6998785 | Silfvast et al. | Feb 2006 | B1 |
| 7115887 | Hassanein et al. | Oct 2006 | B1 |
| 7122816 | Algots et al. | Oct 2006 | B2 |
| 7180081 | Walker et al. | Feb 2007 | B2 |
| 7180082 | Hassanein et al. | Feb 2007 | B1 |
| 7230258 | Ruzic et al. | Jun 2007 | B2 |
| 7323701 | Vaudrevange et al. | Jan 2008 | B2 |
| 7365350 | Tran et al. | Apr 2008 | B2 |
| 7368741 | Melnychuk et al. | May 2008 | B2 |
| 7405416 | Algots et al. | Jul 2008 | B2 |
| 7427766 | Jonkers et al. | Sep 2008 | B2 |
| 7442948 | Wassink | Oct 2008 | B2 |
| 7449703 | Bykanov | Nov 2008 | B2 |
| 7485881 | Wassink et al. | Feb 2009 | B2 |
| 7488962 | Korobochko et al. | Feb 2009 | B2 |
| 7518300 | Bosch et al. | Apr 2009 | B2 |
| 7528395 | Koshelev et al. | May 2009 | B2 |
| 7531820 | Hergenhan et al. | May 2009 | B2 |
| 7839482 | Soer et al. | Nov 2010 | B2 |
| 20020014598 | Melnychuk et al. | Feb 2002 | A1 |
| 20020014599 | Rauch et al. | Feb 2002 | A1 |
| 20020100882 | Partlo et al. | Aug 2002 | A1 |
| 20030006383 | Melnychuk et al. | Jan 2003 | A1 |
| 20040105082 | Koshelev et al. | Jun 2004 | A1 |
| 20040108473 | Melnychuk et al. | Jun 2004 | A1 |
| 20040135103 | Wester | Jul 2004 | A1 |
| 20040145292 | Ahmad et al. | Jul 2004 | A1 |
| 20040160155 | Partlo et al. | Aug 2004 | A1 |
| 20050195506 | McGuire, Jr. | Sep 2005 | A1 |
| 20050230645 | Melnychuk et al. | Oct 2005 | A1 |
| 20060113498 | Vaudrevange et al. | Jun 2006 | A1 |
| 20060138362 | Bakker et al. | Jun 2006 | A1 |
| 20060139604 | Wassink et al. | Jun 2006 | A1 |
| 20060186353 | Wassink | Aug 2006 | A1 |
| 20060192154 | Algots et al. | Aug 2006 | A1 |
| 20060192155 | Algots et al. | Aug 2006 | A1 |
| 20060193997 | Bykanov | Aug 2006 | A1 |
| 20060219958 | Wassink | Oct 2006 | A1 |
| 20060243927 | Tran et al. | Nov 2006 | A1 |
| 20060273732 | Korobochko et al. | Dec 2006 | A1 |
| 20070001571 | Bosch et al. | Jan 2007 | A1 |
| 20070023706 | Sjmaenok et al. | Feb 2007 | A1 |
| 20070085044 | Hergenhan et al. | Apr 2007 | A1 |
| 20070090304 | Jonkers et al. | Apr 2007 | A1 |
| 20070125968 | Klunder et al. | Jun 2007 | A1 |
| 20070235666 | Ruzic et al. | Oct 2007 | A1 |
| 20080067454 | Wassink | Mar 2008 | A1 |
| 20080192218 | Krivtsun et al. | Aug 2008 | A1 |
| 20080225245 | Wood et al. | Sep 2008 | A1 |
| 20080291406 | Soer et al. | Nov 2008 | A1 |
| Number | Date | Country | |
|---|---|---|---|
| 20090027637 A1 | Jan 2009 | US |
