1. Field of the Invention
The present invention relates to packaging processes, and more particularly, to a chip scale package and a fabrication method thereof.
2. Description of Related Art
Chip scale packages have been developed to meet the miniaturization requirement of semiconductor packages and electronic products. The size of a chip scale package is substantially 1.2 times the size of a chip.
In addition to small size, a chip scale package needs high integration and high I/O count for electrically connecting with an external device such as a circuit board so as to meet the demands of electronic products for high performance and high processing speed. To increase the I/O count, as many electrode pads as possible are formed on an active surface of a chip. However, the number of the electrode pads is limited by the area of the active surface of the chip and the pitch between the electrode pads. To form as many I/O contacts as possible on a limited area, wafer-level chip scale packages are developed.
Generally, an RDL (Redistribution Layer) process is performed on a wafer-level chip scale package. The RDL process includes forming a plurality of conductive traces on an active surface of a wafer having a plurality of chips. One ends of the conductive traces are electrically connected to electrode pads of the chips and the other ends of the conductive traces serve as electrical contacts for mounting solder balls. Then, a singulating process is performed. As such, the wafer is cut into a plurality of chips each having a plurality of solder balls formed on the active surface thereof.
In the above-described singulating process, a diamond cutter is generally used to cut the wafer from the active surface thereof. However, during this process, the side and active surfaces of the chips are easily damaged by the diamond cutter due to such as stresses or sideway impacts. Further, since the side and inactive surfaces of the chips are exposed to external environment after the singulating process, the chips easily crack during picking and placing operations.
Therefore, there is a need to provide an electronic package and a fabrication method thereof so as to overcome the above-described drawbacks.
In view of the above-described drawbacks, the present invention provides a method for fabricating an electronic package, which comprises the steps of: providing a substrate having a plurality of electronic elements and a plurality of separation portions formed between the electronic elements, wherein each of the electronic elements has an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; forming at least an opening in each of the separation portions from a side corresponding to the inactive surfaces of the electronic elements, wherein the opening does not penetrate the separation portion; forming an encapsulant in the openings; and singulating the electronic elements along the openings from a side corresponding to the active surfaces of the electronic elements so as to allow each of the electronic elements to have a side surface adjacent to and connecting the active and inactive surfaces of the electronic element and partially covered by the encapsulant.
In the above-described method, the singulating process can comprise laser cutting the separation portions first and then cutting the encapsulant in the openings with a diamond cutter.
In the above-described method, each of the singulating paths of the singulating process can be less in width than each of the separation portions.
In the above-described method, if each of the separation portions has a plurality of openings formed therein, the singulating path can be positioned between the openings.
In the above-described method, if each of the separation portions has a single opening formed therein, the singulating path can correspond in position to the opening.
In the above-described method, the portion of the electronic package covered by the encapsulant can have a thickness of at least 20 um.
The present invention further provides an electronic package, which comprises: an electronic element having an active surface with a plurality of electrode pads, an inactive surface opposite to the active surface, and a side surface adjacent to and connecting the active and inactive surfaces; and an encapsulant covering the side surface of the electronic element, wherein the portion of the electronic package covered by the encapsulant has a thickness of at least 20 um.
In the above-described package and method, the electronic package can have a thickness of 45 to 787 um.
In the above-described package and method, the encapsulant can further be formed on the inactive surface of the electronic element.
In the above-described package and method, an RDL structure can be formed on the active surface of the electronic element and electrically connected to the electrode pads of the electronic element.
In the above-described package and method, a plurality of electronic elements can be formed on the active surface of the electronic element and electrically connected to the electrode pads of the electronic element.
In the above-described package and method, the singulated electronic element can be bonded to a packaging substrate via the active surface thereof.
Therefore, the present invention mainly involves forming openings in the separation portions from a side corresponding to the inactive surfaces of the electronic elements and then singulating the electronic elements along the openings from a side corresponding to the active surfaces of the electronic elements. As such, the side and inactive surfaces of the singulated electronic elements can be covered by the encapsulant so as to prevent the electronic elements from being damaged in subsequent processes such as picking and placing operations, thereby improving the product yield.
The following illustrative embodiments are provided to illustrate the disclosure of the present invention, these and other advantages and effects can be apparent to those in the art after reading this specification.
It should be noted that all the drawings are not intended to limit the present invention. Various modifications and variations can be made without departing from the spirit of the present invention. Further, terms such as “on”, “a” etc. are merely for illustrative purposes and should not be construed to limit the scope of the present invention.
Referring to
In the present embodiment, each of the electronic elements 20 has an active surface 20a with a plurality of electrode pads 200 and an inactive surface 20b opposite to the active surface 20a. Further, a passivation layer 201 is formed on the active surfaces 20a of the electronic elements 20 and exposing the electrode pads 200 of the electronic elements 20.
Each of the electronic elements 20 is an active element such as a semiconductor chip, or a passive element such as a resistor, a capacitor or an inductor. In the present embodiment, the substrate 10 is a silicon wafer, and the electronic elements 20 are chips.
Referring to
Referring to
In the present embodiment, each of the separation portions 21 is partially removed and the remaining portion has a thickness d of about 20 um. The width L of the opening 24, i,e, the width of the separation portion 21, is in a range of 10 um to 3 mm. Further, a thinning process can be selectively performed on the inactive surfaces 20b of the electronic elements 20.
In another embodiment, referring to
Referring to
In the present embodiment, the encapsulant 25 is filled in the openings 24 and hence formed around peripheries of the electronic elements 20. The encapsulant 25 is made of an insulating material, for example, a molding compound material, a dry film material, a photoresist material or a solder mask material.
In another embodiment, referring to
Referring to
Referring to
In the present embodiment, the RDL structure 27 has a circuit layer 271 formed on the passivation layer 201 and electrically connected to the electrode pads 200 of the electronic elements 20, and an insulating layer 273 formed on the circuit layer 271.
Further, portions of the circuit layer 271 are exposed from the insulating layer 273, and the conductive elements 28 are formed on the exposed portions of the circuit layer 271 and electrically connected to the circuit layer 271.
The conductive elements 28 are solder balls, metal bumps or a combination thereof.
In an embodiment, referring to
Referring to
In the present embodiment, the singulating process includes laser cutting the separation portions 21 first and then cutting the encapsulant 25 in the openings 24 with a diamond cutter.
The cutting paths S of the diamond cutter correspond in position to the openings 24 and the width W of the cutting paths S is less than the width L of the openings 24. As such, the encapsulant 25 covers the side surfaces 20c of the electronic elements 20. In another embodiment, both the separation portions 21 and the encapsulant 25 in the openings 24 are cut by using a diamond cutter.
Referring to
Subsequently, referring to
Referring to
The present invention further provides an electronic package 2, 2′, 2″ which has: an electronic element 20 having an active surface 20a with a plurality of electrode pads 200, an inactive surface 20b opposite to the active surface 20a, and a side surface 20c adjacent to and connecting the active and inactive surfaces 20a, 20b; and an encapsulant 25, 25′ covering the side surface 20c of the electronic element 20, wherein the portion of the electronic package covered by the encapsulant has a thickness of at least 20 um.
In an embodiment, an RDL structure 27 is formed on the active surface 20a of the electronic element 20 and electrically connected to the electrode pads 200 of the electronic element 20.
In an embodiment, a plurality of electronic elements 28 are formed on the active surface 20a of the electronic element 20 and electrically connected to the electrode pads 200 of the electronic element 20.
In an embodiment, the encapsulant 25 is further formed on the inactive surface 20b of the electronic element 20.
In an embodiment, the electronic element 20 is bonded to a packaging substrate 8 via the active surface 20a thereof.
Therefore, the present invention mainly involves forming openings in the separation portions from a side corresponding to the inactive surfaces of the electronic elements and then singulating the electronic elements along the openings from a side corresponding to the active surfaces of the electronic elements. As such, the side and inactive surfaces of the singulated electronic elements can be covered by the encapsulant so as to prevent the electronic elements from being damaged in subsequent processes such as picking and placing operations, thereby improving the product yield.
The above-described descriptions of the detailed embodiments are only to illustrate the preferred implementation according to the present invention, and it is not to limit the scope of the present invention. Accordingly, all modifications and variations completed by those with ordinary skill in the art should fall within the scope of present invention defined by the appended claims.
Number | Date | Country | Kind |
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103139709 | Nov 2014 | TW | national |