Patent Application
20250234445
The present application claims the benefit of Japanese Patent Application No. 2024-005282, filed on Jan. 17, 2024, the entire contents of which are hereby incorporated by reference.
The present disclosure relates to an extreme ultraviolet light generation apparatus and an electronic device manufacturing method.
Recently, miniaturization of a transfer pattern in optical lithography of a semiconductor process has been rapidly proceeding along with miniaturization of the semiconductor process. In the next generation, microfabrication at 10: nm or less will be required. Therefore, it is expected to develop a semiconductor exposure apparatus that combines an apparatus for generating extreme ultraviolet (EUV) light having a wavelength of about 13 nm with a reduced projection reflection optical system.
As the EUV light generation apparatus, a laser produced plasma (LPP) type apparatus using plasma generated by irradiating a target substance with laser light has been developed.
An extreme ultraviolet light generation apparatus according to an aspect of the present disclosure includes a chamber including a first space in which a target is irradiated with laser light to generate extreme ultraviolet light, and a second space in which an EUV light concentrating mirror that reflects and outputs the extreme ultraviolet light to an external apparatus is arranged; a first partition wall including a first opening through which the extreme ultraviolet light passes and located between the first space and the second space; a connection portion which connects the chamber and the external apparatus; a second partition wall including a second opening through which the extreme ultraviolet light passes and located inside the connection portion; a gas supply port which allows a gas, to be supplied to the second space, to pass therethrough; a first exhaust port which opens to the first space; a second exhaust port which opens to a third space located inside the connection portion and between the second partition wall and the external apparatus; a first sensor arranged in the third space; and a processor configured to calculate a first passage flow rate of a gas passing through the first opening based on a measurement result of the first sensor and adjust a supply flow rate of the gas to be supplied through the gas supply port based on the first passage flow rate.
An electronic device manufacturing method according to an aspect of the present disclosure includes generating extreme ultraviolet light using an extreme ultraviolet light generation apparatus, outputting the extreme ultraviolet light to an exposure apparatus, and exposing a photosensitive substrate to the extreme ultraviolet light in the exposure apparatus to manufacture an electronic device. Here, the extreme ultraviolet light generation apparatus includes a chamber including a first space in which a target is irradiated with laser light to generate the extreme ultraviolet light, and a second space in which an EUV light concentrating mirror that reflects and outputs the extreme ultraviolet light to the exposure apparatus is arranged; a first partition wall including a first opening through which the extreme ultraviolet light passes and located between the first space and the second space; a connection portion which connects the chamber and the exposure apparatus; a second partition wall including a second opening through which the extreme ultraviolet light passes and located inside the connection portion; a gas supply port which allows a gas, to be supplied to the second space, to pass therethrough; a first exhaust port which opens to the first space; a second exhaust port which opens to a third space located inside the connection portion and between the second partition wall and the exposure apparatus; a sensor arranged in the third space; and a processor configured to calculate a first passage flow rate of a gas passing through the first opening based on a measurement result of the sensor and adjust a supply flow rate of the gas to be supplied through the gas supply port based on the first passage flow rate.
An electronic device manufacturing method according to an aspect of the present disclosure includes inspecting a defect of a mask by irradiating the mask in an inspection apparatus with extreme ultraviolet light generated by an extreme ultraviolet light generation apparatus, selecting a mask using a result of the inspection, and exposing and transferring a pattern formed on the selected mask onto a photosensitive substrate. Here, the extreme ultraviolet generation apparatus includes a chamber including a first space in which a target is irradiated with laser light to generate the extreme ultraviolet light, and a second space in which an EUV light concentrating mirror that reflects and outputs the extreme ultraviolet light to the inspection apparatus is arranged; a first partition wall including a first opening through which the extreme ultraviolet light passes and located between the first space and the second space; a connection portion which connects the chamber and the inspection apparatus; a second partition wall including a second opening through which the extreme ultraviolet light passes and located inside the connection portion; a gas supply port which allows a gas, to be supplied to the second space, to pass therethrough; a first exhaust port which opens to the first space; a second exhaust port which opens to a third space located inside the connection portion and between the second partition wall and the inspection apparatus; a sensor arranged in the third space; and a processor configured to calculate a first passage flow rate of a gas passing through the first opening based on a measurement result of the sensor and adjust a supply flow rate of the gas to be supplied through the gas supply port based on the first passage flow rate.
Embodiments of the present disclosure will be described below merely as examples with reference to the accompanying drawings.
Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments described below show some examples of the present disclosure and do not limit the contents of the present disclosure. Also, all configurations and operation described in the embodiments are not necessarily essential as configurations and operation of the present disclosure. Here, the same components are denoted by the same reference numeral, and duplicate description thereof is omitted.
The EUV light generation apparatus 1 is used together with a laser device 3. In the present disclosure, a system including the EUV light generation apparatus 1 and the laser device 3 is referred to as the EUV light generation system 11. The EUV light generation apparatus 1 includes a chamber 2, an inner wall 37, and a first partition wall 38.
The chamber 2 is a sealable container and has a substantially cylindrical shape. The center axis of the cylindrical shape is parallel to the Y direction, and a target supply unit 26 and a target collection unit 28 are arranged at positions on the center axis. A plasma generation region 25 is located between the target supply unit 26 and the target collection unit 28. The internal space of the chamber 2 includes a first space 20a, a second space 20b, and a peripheral space 20c. The inner wall 37 and the first partition wall 38 are located between the first space 20a and the second space 20b.
The inner wall 37 has a cylindrical shape and penetrates the side surface of the chamber 2. The center axis of the cylindrical shape is parallel to the X direction. A part of the inner wall 37 is located inside the chamber 2 and is arranged to cover the plasma generation region 25. Another part of the inner wall 37 is located outside the chamber 2 and is connected to an exhaust device 30. The space inside the inner wall 37 and inside the chamber 2 is defined as the first space 20a. The first space 20a has a first exhaust port 36 inside the inner wall 37 and at a boundary with respect to the space outside the chamber 2. An exhaust valve 39 capable of adjusting the opening degree thereof is arranged between the first exhaust port 36 and the exhaust device 30.
The first partition wall 38 separates the space inside the chamber 2 and outside the inner wall 37 into the second space 20b and the peripheral space 20c surrounding the inner wall 37. The first partition wall 38 has a first opening 371.
Inside the chamber 2, the inner wall 37 has the first opening 371, a laser passage port 372, and target passage ports 373, 374. The first opening 371 of the inner wall 37 is identical to the first opening 371 of the first partition wall and is 38 configured to provide communication between the second space 20b and the first space 20a. The laser passage port 372 and the target passage ports 373, 374 are configured to provide communication between the peripheral space 20c and the first space 20a.
The target supply unit 26 supplies the target 27 containing a target substance into the chamber 2. The material of the target substance may include tin, terbium, gadolinium, lithium, xenon, or a combination of any two or more thereof.
A window 21 is arranged in the wall of the chamber 2. Pulse laser light 33 output from the laser device 3 passes through the window 21. The chamber 2 is connected to a first gas supply device 41 that supplies a gas at a flow rate F1 to the peripheral space 20c. The gas to be supplied is, for example, a hydrogen gas.
An EUV light concentrating mirror 23 having a spheroidal reflection surface is arranged in the second space 20b. A multilayer reflective film in which molybdenum and silicon are alternately laminated is formed on the reflection surface. The EUV light concentrating mirror 23 has first and second focal points. The EUV light concentrating mirror 23 is arranged such that the first focal point is located in a plasma generation region 25 and the second focal point is located at an intermediate focal point 292. A pressure P1 in the second space 20b is measured by a pressure sensor 71 arranged in the chamber 2. The pressure sensor 71 corresponds to the second sensor in the present disclosure. The exhaust device 30 is controlled so that the pressure P1 in the second space 20b falls within a target range. In the present disclosure, the target range of the pressure P1 may be referred to as a first target range.
The first opening 371 is located on the optical path of radiation light 251 including the EUV light generated at the plasma generation region 25 and directed toward the EUV light concentrating mirror 23. An EUV passage port 50 is located on the optical path of reflection light 252 directed toward the intermediate focal point 292 from the EUV light concentrating 23. The mirror EUV light concentrating mirror 23 is arranged such that the center axis of the optical path of the reflection light 252 is inclined with respect to the center axis of the optical path of the radiation light 251, and is configured to output the reflection light 252 to the external apparatus 6 via an optical path outside the first opening 371. The optical path outside the first opening 371 means an optical path that does not pass through the first opening 371.
The EUV light generation apparatus 1 includes a connection pipe 29 connecting the chamber 2 and a chamber of the external apparatus 6. The external apparatus 6 is an apparatus that performs a function by using the EUV light, and may be an exposure apparatus 6a shown in
The gas supply pipe 54 is not limited to being connected to the connection pipe 29, and may be connected to the chamber 2 to supply the gas to the second space 20b.
The EUV light generation apparatus 1 includes a target sensor (not shown) and a laser light transmission device (not shown). The target sensor detects at least one of the presence, trajectory, position, and velocity of the target 27. The target sensor may have an imaging function. The laser light transmission device is arranged between the laser device 3 and the chamber 2 and includes optical elements for defining a transmission state of the laser light 33, and an actuator for adjusting the position, posture, and the like of the optical elements.
The EUV light generation apparatus 1 further includes a processor 5. The processor 5 is a processing device including a memory 501 in which a control program is stored, and a central processing unit (CPU) 502 which executes the control program. The processor 5 is specifically configured or programmed to perform various processes included in the present disclosure. The processor 5 controls the entire EUV light generation system 11. The processor 5 processes the detection result of the target sensor, and controls timing at which the target 27 is output, an output direction of the target 27, and the like based on the detection result of the target sensor. Further, the processor 5 controls oscillation timing of the laser device 3, a travel direction of the laser light 33, a concentration position of the laser light 33, and the like.
The laser light 33 output from the laser device 3 enters the chamber 2 through the window 21. The laser light 33 passes through the laser passage port 372 and is guided to the plasma generation region 25.
The target 27 output from the target supply unit 26 passes through the target passage port 373 and reaches the plasma generation region 25. The target 27 is irradiated with the laser light 33. Among the plurality of targets 27, the targets 27 without being irradiated with the laser light 33 and without being turned into plasma pass through the plasma generation region 25, further pass through the target passage port 374, and reach the target collection unit 28.
The target 27 irradiated with the laser light 33 is turned into plasma, and the radiation light 251 is radiated from the plasma. The radiation light 251 passes through the first opening 371 and is incident on the EUV light concentrating mirror 23. The EUV light contained in the radiation light 251 is reflected by the EUV light concentrating mirror 23 with higher reflectance than light in other wavelength ranges. The reflection light 252 including the EUV light reflected by the EUV light concentrating mirror 23 is concentrated on the intermediate focal point 292 and output to the external apparatus 6. Here, one target 27 may be irradiated with a plurality of pulses included in the laser light 33. The plurality of pulses includes, for example, a prepulse and a main pulse.
The exhaust device 30 exhausts the gas in the first space 20a to the outside of the inner wall 37 and the outside of the chamber 2 via the exhaust valve 39. As a result, the pressure in the first space 20a is maintained lower than both the pressure in the peripheral space 20c and the pressure P1 in the second space 20b. Consequently, the gas flows from the second space 20b toward the first space 20a through the first opening 371, and the gas flows from the peripheral space 20c toward the first space 20a through each of the laser passage port 372 and the target passage ports 373, 374. Therefore, debris of the target substance generated at the vicinity of the plasma generation region 25 is suppressed from moving from the first space 20a to the peripheral space 20c and the second space 20b. Further, debris of the target substance is suppressed from being deposited on optical components such as the EUV light concentrating mirror 23 and the window 21.
The pressure P1 in the second space 20b of the chamber 2 is, for example, around 100 Pa, and the pressure in the chamber of the external apparatus 6 is 10 Pa or less, for example, around 1 Pa. Therefore, in the comparative example, a part of the gas in the chamber 2 may flow into the chamber of the external apparatus 6. As an improvement of the comparative example, in order to reduce inflow of the gas into the chamber of the external apparatus 6, it is conceivable to arrange a differential evacuation device including a second exhaust port 61, which will be described later, in the connection pipe 29. In this improvement, a part of the gas in the chamber 2 is exhausted from the second exhaust port 61.
As described above, the gas supplied from the second gas supply device 42 not only flows out through the first opening 371 but also flows out to the external apparatus 6 in the comparative example, and flows out from the second exhaust port 61 in the improvement. Therefore, even when the supply flow rate F2 of the gas supplied from the second gas supply device 42 is known, it is difficult to know a first passage flow rate M1 of the gas passing through the first opening 371.
If the flow rate at the first exhaust port 36 is measured, it is possible to know the first passage flow rate M1 as well. However, since the gas passing through the first exhaust port 36 contains a large amount of debris of the target substance, the accuracy of the flow sensor is likely to be lowered, and accurate measurement is difficult.
Since the gas flowing from the second space 20b to the first space 20a through the first opening 371 suppresses debris of the target substance from moving from the first space 20a to the second space 20b, it is not preferable that the first passage flow rate M1 is too small. On the other hand, if the first passage flow rate M1 is too large, the trajectory of the target 27 becomes unstable because the flow rate of the gases in and around the plasma generation region 25 increases, and then generation of the EUV light may become unstable.
The embodiments described below relate to controlling the supply flow rate F2 of the gas to be supplied from the second gas supply device 42 so that the first passage flow rate M1 of the gas from the second space 20b to the first space 20a falls within an appropriate range.
3. EUV Light Generation System 11a which Controls Supply Flow Rate F2 Based on Exhaust Flow Rate E1
The second partition wall 92 includes a second opening 921 through which the reflection light 252 passes and a partition plate 922 surrounding the second opening 921. The third partition wall 93 includes a third opening 931 smaller than the second opening 921 and a partition plate 932 surrounding the third opening 931, and is arranged such that the reflection light 252 having passed through the second opening 921 is output to the external apparatus 6 after passing through the third opening 931. An exhaust device 31 is connected to the exhaust pipe 64 via the second exhaust port 61. A flow rate sensor 62 and a valve 63 are arranged at the exhaust pipe 64 between the second exhaust port 61 and a portion connected to the connection pipe 29. The flow rate sensor 62 is an example of the first sensor in the present disclosure, and is configured to measure an exhaust flow rate E1 of the gas passing through the second exhaust port 61.
A space between the second partition wall 92 and the third partition wall 93 is defined as a third space 910, and a space between the EUV passage port 50 and the second partition wall 92 is defined as a fourth space 900. The third space 910 includes not only the inside of the connection pipe 29 but also the inside of the exhaust pipe 64 to which the second exhaust port 61 opens. By exhausting the gas in the third space 910 through the second exhaust port 61, the gas in the chamber 2 is suppressed from flowing into the chamber of the external apparatus 6. Although the third partition wall 93 is not an essential configuration in the present disclosure, the presence of the third partition wall 93 further suppresses the gas in the chamber 2 from flowing into the chamber of the external apparatus 6. The fourth space 900 includes not only the inside of the connection pipe 29 but also the inside of the gas supply pipe 54 to which the gas supply port 52 opens.
In S1, the processor 5 fully opens the exhaust valve 39 and causes the following exhaust devices to operate at maximum power.
The exhaust device of the external apparatus 6 may be controlled not by the processor 5 but by a processor (not shown) of the external apparatus 6.
In S2, the processor 5 controls the first gas supply device 41 so that the first gas supply device 41 starts supplying the gas at the flow rate F1.
In S3, the processor 5 calculates the initial setting value of the supply flow rate F2 of the gas by the second gas supply device 42 by the following expression.
F2=M1t+M2p
M1t is a target value of the first passage flow rate M1 of the gas at the first opening 371, and is set to a value that can suppress debris of the target substance from moving from the first space 20a to the second space 20b and the trajectory of the target 27 from becoming unstable. M2p is an assumed value of a second passage flow rate M2 of the gas at the second opening 921, and is calculated from the assumed value of the pressure difference between the second space 20b and the third space 910 and the size of the second opening 921.
In S4, the processor 5 controls the second gas supply device 42 so that the second gas supply device 42 starts supplying the gas at the supply flow rate F2.
In S5, the processor 5 adjusts the opening degree of the exhaust valve 39 and the power of the exhaust device 30 to bring the pressure P1 measured by the pressure sensor 71 into the target range. Alternatively, only one of the exhaust valve 39 and the exhaust device 30 may be adjusted. In the present disclosure, the process of S5 may be referred to as a first process.
In S6, the processor 5 calculates the second passage flow rate M2 at the second opening 921 based on the measurement result of the flow rate sensor 62. For example, assuming that the outflow of the gas from the third space 910 to the external apparatus 6 is negligibly small, the exhaust flow rate E1 measured by the flow rate sensor 62 can be set to the second passage flow rate M2 as it is. Alternatively, the outflow rate of the gas from the third space 910 to the external apparatus 6 may be calculated from the assumed pressure difference between the third space 910 and the external apparatus 6 and the size of the third opening 931, and the second passage flow rate M2 may be calculated by adding the outflow rate to the exhaust flow rate E1.
In S7, the processor 5 determines whether or not the value obtained by subtracting the second passage flow rate M2 from the supply flow rate F2, that is, the first passage flow rate M1 is within a target range. The upper limit of the target range of the first passage flow rate M1 is, for example, a value obtained by adding a positive number AM to the target value M1t, and the lower limit of the target range of the first passage flow rate M1 is, for example, a value obtained by subtracting the positive number AM from the target value M1t. In the present disclosure, the target range of the first passage flow rate M1 may be referred to as a second target range. When the first passage flow rate M1 is not within the target range (S7:NO), the processor 5 advances processing to S8. When the first passage flow rate M1 is within the target range (S7:YES), the processor 5 advances processing to S9.
In S8, the processor 5 increases the supply flow rate F2 when the first passage flow rate M1 is smaller than the lower limit of the target range, and decreases the supply flow rate F2 when the first passage flow rate M1 is larger than the upper limit of the target range. In the present disclosure, the processes of S6 to S8 may be referred to as a second process.
After S8, the processor 5 returns processing to S4 and continues adjustment using the new value of the supply flow rate F2 until the first passage flow rate M1 falls within the target range.
In S9, the processor 5 determines that the setting of the supply flow rate F2 has been completed, and ends processing of the present flowchart. Thereafter, output of the target 27 and output of the laser light 33 are started, and output of the EUV light is started.
Accordingly, since the first passage flow rate M1 of the gas passing through the first opening 371 can be calculated based on the measurement result of the first sensor arranged in the third space 910, the supply flow rate F2 can be adjusted so that the first passage flow rate M1 falls within an appropriate range. Therefore, it is possible to suppress debris of the target substance from moving to the second space 20b through the first opening 371 and the trajectory of the target 27 from becoming unstable.
Accordingly, by using the exhaust flow rate E1 of the gas passing through the second exhaust port 61, the first passage flow rate M1 can be accurately calculated, and the supply flow rate F2 can be accurately adjusted.
Accordingly, since the second passage flow rate M2 of the gas passing through the second opening 921 is calculated, the first passage flow rate M1 can be calculated more accurately.
Accordingly, assuming that the amount of the gas flowing from the third space 910 to the external apparatus 6 is sufficiently small, the first passage flow rate M1 can be easily calculated assuming that the exhaust flow rate E1 is equal to the second passage flow rate M2.
Accordingly, by configuring the differential evacuation device including the third partition wall 93, the amount of the gas flowing from the third space 910 to the external apparatus 6 can be limited, and the first passage flow rate M1 can be accurately calculated. Further, since the gas pressure in the third space 910 is maintained at a low pressure, loss due to absorption of the EUV light in the third space 910 can be suppressed.
Accordingly, since the exhaust flow rate E1 is measured at the exhaust pipe 64 branched from the connection pipe 29, the exhaust flow rate E1 can be accurately measured.
Accordingly, since the first space 20a in which debris of the target substance is generated is separated from the second, third, and fourth spaces 20b, 910, 900 including the optical path of the EUV light from the EUV light concentrating mirror 23 to the external apparatus 6, it is possible to suppress debris of the target substance from entering the second, third, and fourth spaces 20b, 910, 900.
Accordingly, the supply flow rate F2 can be adjusted so that the first passage flow rate M1 falls within the target range.
When the pressure P1 in the second space 20b changes, the first passage flow rate M1 of the gas passing through the first opening 371 may change. Both the pressure P1 in the second space 20b and the first passage flow rate M1 may be controlled within the target ranges respectively by adjusting the supply flow rate F2 based on the first passage flow rate M1 calculated after the pressure P1 in the second space 20b is brought into the target range.
When the supply flow rate F2 changes, the pressure P1 in the second space 20b may change. By alternately performing the process of S5 and the processes of S6 to S8, both the pressure P1 in the second space 20b and the first passage flow rate M1 can be controlled within the target ranges respectively.
Accordingly, since the flow rate of the exhausted gas is adjusted by the opening degree of the exhaust valve 39, the pressure P1 in the second space 20b can be accurately controlled.
Accordingly, by alternately performing the process of S5 and the processes of S6 to S8, both the pressure P1 in the second space 20b and the first passage flow rate M1 can be controlled within the target ranges respectively.
Accordingly, since the gas flow from the fourth space 900 to the second space 20b can be generated, it is possible to suppress debris from reaching the fourth space 900 even when debris of the target substance is mixed into the second space 20b.
In other respects, the first embodiment is similar to the comparative example.
4. EUV Light Generation System 11b which Controls Supply Flow Rate F2 Based on Pressure P2 in Third Space 910
In S6, the processor 5 calculates the second passage flow rate M2 at the second opening 921 based on an absolute value ΔP of the pressure difference between the pressure P1 in the second space 20b measured by the pressure sensor 71 and the pressure P2 in the third space 910 measured by the pressure sensor 72. As a method of calculating the second passage flow rate M2 based on the absolute value ΔP of the pressure difference, there are a first method using a result measured in advance and a second method in which theoretical calculation is performed.
The second passage flow rate M2 is measured as follows. In the EUV light generation system 11b, the supply flow rate F2 of the gas by the second gas supply device 42 is changed under a state in which the exhaust valve 39 is closed, the supply of the gas by the first gas supply device 41 is stopped, the exhaust device (not shown) of the external apparatus 6 is stopped, and the exhaust device 31 is operated. Since the second passage flow rate M2 at this time is equal to the supply flow rate F2, the second passage flow rate M2 is known if the supply flow rate F2 can be known. Alternatively, since the second passage flow rate M2 is equal to the exhaust flow rate E1 described in the first embodiment, the measurement value of the flow rate sensor 62 described in the first embodiment may be set as the second passage flow rate M2.
By measuring the second passage flow rate M2 while changing the supply flow rate F2 in this manner and measuring the absolute value ΔP, it is possible to create the data table as shown in
In the second method of calculating the second passage flow rate M2 based on the absolute value AP of the pressure difference, a value proportional to the positive square root of the absolute value ΔP is calculated. Specifically, the second passage flow rate M2 is calculated as C×A×(2×ΔP/ρ)1/2 using the absolute value ΔP, a flow rate coefficient C, a cross-sectional area A of the second opening 921, and a fluid density ρ of the gas passing through the second opening 921.
In the second method, C×A of the above-described expression may be obtained using the measurement result described with reference to
Accordingly, by using the measurement results of the pressure sensors 71, 72, the first passage flow rate M1 can be accurately calculated. Further, since the flow rate sensor 62 is not required to be provided at the exhaust pipe 64, a decrease in the exhaust capacity can be suppressed.
Accordingly, since the second passage flow rate M2 of the gas passing through the second opening 921 is calculated, the first passage flow rate M1 can be calculated more accurately.
Accordingly, by using the data table, the second passage flow rate M2 can be calculated easily.
Accordingly, by setting the value proportional to the positive square root of the absolute value ΔP of the pressure difference as the second passage flow rate M2, a theoretically accurate second passage flow rate M2 can be calculated.
Accordingly, the second passage flow rate M2 can be calculated by theoretical calculation using the pressure difference.
In other respects, the second embodiment is similar to the first embodiment.
Although
The description above is intended to be illustrative and the present disclosure is not limited thereto. Therefore, it would be obvious to those skilled in the art that various modifications to the embodiments of the present disclosure would be possible without departing from the spirit and the scope of the appended claims. Further, it would be also obvious to those skilled in the art that the embodiments of the present disclosure would be appropriately combined.
The terms used throughout the present specification and the appended claims should be interpreted as non-limiting terms unless clearly described. For example, terms such as “comprise”, “include”, “have”, and “contain” should not be interpreted to be exclusive of other structural elements. Further, indefinite articles “a/an” described in the present specification and the appended claims should be interpreted to mean “at least one” or “one or more.” Further, “at least one of A, B, and C” should be interpreted to mean any of A, B, C, A+B, A+C, B+C, and A+B+C as well as to include combinations of the any thereof and any other than A, B, and C.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2024-005282 | Jan 2024 | JP | national |
