Claims
- 1. A method for forming stacked gate dielectrics comprising depositing silica by reacting TEOS with N2O at temperatures less than 600° C.
- 2. A method for performing multiple depositions on a wafer, comprising the steps of:
vaporizing a first precursor in a vaporization chamber; delivering the first vaporized precursor to a process chamber; depositing the first vaporized precursor on a substrate in the process chamber; then vaporizing a second precursor; delivering the second vaporized precursor to the process chamber; and depositing the second vaporized precursor on the substrate in the process chamber.
- 3. The method of claim 2 wherein the second precursor is vaporized in a second vaporization chamber.
- 4. The method of claim 3 wherein the first precursor and the second precursor are vaporized by delivering the first precursor and the second precursor to respective vaporizers in each vaporization chamber.
- 5. The method of claim 2 wherein each precursor is delivered onto a heated, sloped vaporizer surface across which the precursor spreads, the precursor vaporizing as it spreads.
- 6. The method of claim 2 wherein the substrate remains stationary throughout the method.
- 7. The method of claim 2 wherein the first precursor is a copper source and the second precursor is an aluminum source.
- 8. The method of claim 2 wherein the first precursor is a silicon source and the second precursor is a tantalum source.
RELATED APPLICATIONS
[0001] This application is a divisional application of U.S. application Ser. No. 09/421,823, filed Oct. 20, 1999 which is a continuation-in-part application of U.S. application Ser. No. 09/291,871, filed Apr. 14, 1999, which is a continuation-in-part application of U.S. application Ser. No. 09/060,007 filed on Apr. 14, 1998, the entire contents of both applications are incorporated herein by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09421823 |
Oct 1999 |
US |
Child |
09850454 |
May 2001 |
US |
Continuation in Parts (2)
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Number |
Date |
Country |
Parent |
09291871 |
Apr 1999 |
US |
Child |
09421823 |
Oct 1999 |
US |
Parent |
09060007 |
Apr 1998 |
US |
Child |
09291871 |
Apr 1999 |
US |