Claims
- 1. A fine pattern forming apparatus, comprising:
- a vacuum chamber;
- reactive gas supplying means for supplying a reactive gas into said vacuum chamber;
- a stage disposed within said vacuum chamber for supporting a sample and serving as an electrode, at least part of said stage being made of a magnetic material;
- an opposed electrode disposed in opposed relation to said stage;
- magnetic field generating means for magnetically levitating said stage to provide a predetermined gap between said stage and said opposed electrode; and
- evacuation means for evacuating said vacuum chamber.
- 2. A fine pattern forming apparatus according to claim 1 wherein said sample is a semiconductor substrate.
- 3. A fine pattern forming apparatus according to claim 1 wherein said sample is a magnetic tape.
- 4. A fine pattern forming apparatus according to claim 1 wherein said sample is a magnetic disk.
- 5. A fine pattern forming apparatus according to claim 1 wherein said sample is an optical disk.
- 6. A fine pattern forming apparatus according to claim 1 wherein said sample is a metal shaped substance.
- 7. A fine pattern forming apparatus according to claim 1 wherein said sample is a machine component.
- 8. A fine pattern forming apparatus according to claim 1 wherein said sample includes a substrate and a film disposed on said substrate in which a fine pattern is to be formed.
- 9. A fine pattern forming apparatus according to claim 8 wherein said film in which a fine pattern is to be formed is selected from the group consisting of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film.
- 10. A fine pattern forming apparatus according to claim 8 wherein said film in which a fine pattern is to be formed is selected from the group consisting of a polycrystalline and a single crystal silicon film.
- 11. A fine pattern forming apparatus according to claim 8 wherein said film in which a fine pattern is to be formed is selected from the group consisting of tungsten, tantalum, molybdenum, zirconium, titanium, hafnium, chromium, platinum, iron, zinc, tin, a silicide of any of the foregoing elements, a nitride of any of the foregoing elements, and a carbide of any of the foregoing elements.
- 12. A fine pattern forming apparatus according to claim 8 wherein said film in which a fine pattern is to be formed is selected from the group consisting of aluminum copper, gold, silver, and alloys mainly composed of any of these metals.
- 13. A fine pattern forming apparatus according to claim 8 wherein said film in which a fine pattern is to be formed is an organic polymer such as a novolak resin and polyimide.
- 14. A fine pattern forming apparatus according to claim 8 wherein said film in which a fine pattern is to be formed is a ferroelectric substance such as PZT (lead, zinc, tin).
- 15. The fine pattern forming apparatus according to claim 1 wherein said magnetic field generating means comprises an external magnetic field coil.
- 16. A fine pattern forming apparatus comprising:
- a vacuum chamber;
- reactive gas supplying means for supplying a reactive gas into said vacuum chamber;
- a stage disposed within said vacuum chamber for supporting a sample and serving as an electrode;
- an opposed electrode disposed in opposed relation to said stage, at least part of said opposed electrode being made of a magnetic material;
- magnetic field generating means for levitating said opposed electrode magnetically to provide a predetermined gap between said stage and said opposed electrode; and
- evacuation means for evacuating said vacuum chamber.
- 17. The fine pattern forming apparatus according to claim 16 wherein said magnetic field generating means comprises an external magnetic field coil.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2-263872 |
Oct 1990 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 07/644,574, filed Jan. 23, 1991, now abandoned.
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Continuations (1)
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Number |
Date |
Country |
Parent |
644574 |
Jan 1991 |
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