Claims
- 1. A contact comprising, in order:a) a silicon substrate; b) a highly disordered silicide layer comprising titanium, silicon, and the element selected from the group consisting of tungsten, tantalum, and molybdenum; and c) a titanium oxynitride layer; in which the interface between the silicon substrate and the highly disordered silicide layer is atomically flat.
- 2. The contact of claim 1 in which the titanium oxynitride layer is uniformly thick.
- 3. The contact of claim 1 in which the highly disordered silicide layer is nano-crystalline and consists essentially of titanium, silicon, and the element selected from the group consisting of tungsten, tantalum, and molybdenum.
- 4. The contact of claim 1 in which the highly disordered silicide layer is amorphous and consists essentially of titanium, silicon, and the element selected from the group consisting of tungsten, tantalum, and molybdenum.
- 5. The contact of claim 1 in which the highly disordered silicide layer comprises about 2 to about 15 atomic percent of the element selected from the group consisting of tungsten, tantalum, and molybdenum, based on the total amount of the element and titanium present in the silicide layer.
- 6. The contact of claim 1 in which:the highly disordered silicide layer consists essentially of titanium, silicon, and the element selected from the group consisting of tungsten, tantalum, and molybdenum; the highly disordered silicide layer is about 3 nm to 20 nm thick; and the titanium oxynitride layer is about 2 nm to about 15 nm thick.
- 7. The contact of claim 6 in which the highly disordered silicide layer contains about 5 to about 10 atomic percent of the element selected from the group consisting of tungsten, tantalum, and molybdenum, based on the total amount of the element and titanium present in the silicide layer.
- 8. The contact of claim 7 in which the element is tantalum.
- 9. The contact of claim 7 in which the element is molybdenum.
- 10. The contact of claim 1 additionally comprising (d) a layer of conductive material disposed adjacent to the titanium oxynitride layer and opposite the highly disordered silicide layer.
- 11. The contact of claim 10 in which the conductive material is selected from the group consisting of tungsten, aluminum, copper, gold, tantalum, aluminum-copper alloy, and aluminum-silicon-copper alloy.
- 12. The contact of claim 11 in which the conductive material is tungsten.
- 13. The contact of claim 12 in which the titanium oxynitride layer is uniformly thick.
- 14. The contact of claim 13 in which the highly disordered silicide layer is nano-crystalline and consists essentially of titanium, silicon, and the element selected from the group consisting of tungsten, tantalum, and molybdenum.
- 15. The contact of claim 13 in which the highly disordered silicide layer is amorphous and consists essentially of titanium, silicon, and the element selected from the group consisting of tungsten, tantalum, and molybdenum.
- 16. The contact of claim 13 in which:the silicide layer consists essentially of titanium, silicon, and the element selected from the group consisting of tungsten, tantalum, and molybdenum; the highly disordered silicide layer contains about 2 to about 15 atomic percent of the element selected from the group consisting of tungsten, tantalum, and molybdenum, based on the total amount of the element and titanium present in the silicide layer; the highly disordered silicide layer is about 3 nm to 20 nm thick; and the titanium oxynitride layer is about 2 nm to about 15 nm thick.
- 17. The contact of claim 16 in which the element is tungsten.
- 18. The contact of claim 17 additionally comprising a tungsten silicide layer forming the interface between the silicon substrate and the highly disordered silicide layer, in which the tungsten silicide layer is about a monolayer thick and is atomically flat.
- 19. The contact of claim 16 in which the element is tantalum.
- 20. The contact of claim 16 in which the element is molybdenum.
CROSS-REFERENCE TO A RELATED APPLICATION
This application is a continuation-in-part of parent application Ser. No. 09/025,718, filed on Feb. 18, 1998, now U.S. Pat. No. 6,022,801, issued on Feb. 8, 2000.
US Referenced Citations (14)
Foreign Referenced Citations (1)
Number |
Date |
Country |
7-321069 |
Dec 1995 |
JP |
Non-Patent Literature Citations (1)
Entry |
IBM Docket No. BU9-93-016V entitled Low Temperature Formation of Low Resistivity Titanium Silicide, now USPTO S/N 08/586,046, filed Jan. 16, 1996. See application as filed, pp. 1-26, with disclosure BU8-95-0143, pp. 1-18, w/Figures 1-7 on 5 pages of drawings. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09/025718 |
Feb 1998 |
US |
Child |
09/482547 |
|
US |