The invention relates to a gun chamber, a charged particle beam apparatus utilizing said gun chamber and a method of operating the charged particle beam apparatus.
Technologies like microelectronics, micromechanics and biotechnology have created a high demand in industry for structuring and probing specimens within the nanometer scale. On such a small scale, probing or structuring, e.g. of photomasks, is often done with electron beams which are generated and focused in electron beam devices like electron microscopes or electron beam pattern generators. Electrons beams offer superior spatial resolution compared to e.g. photon beams due to their short wave lengths at a comparable particle energy.
The first step in the process of creating images in any electron microscope is the production of an electron beam. The electron beam is generated in a device often called an electron gun. Three major types of electron guns are used in electron microscopes: tungsten-hairpin filament guns, lanthanum-hexaboride guns, and field-emission guns. Field-emission guns offer several advantages over tungsten-hairpin filament guns or lanthanum-hexaboride guns: First, the brightness may be up to a thousand times greater than that of a tungsten gun. Second, the electrons are emitted from a point more narrow than that in the other sources. Thus, superior resolution is achieved by field-emission guns compared to tungsten or LaB6 guns. Furthermore, the energy spread of the emitted electrons is only about one-tenth that of the tungsten-hairpin gun and one-fifth that of the LaB6 gun. Finally, the field-emission gun has a very long life, up to a hundred times that of a tungsten gun. For these reasons, the field-emission gun is the preferred choice for a number of applications.
There exist three major types of field emission guns: cold field emission guns, thermal field emission guns and Schottky emitters. While cold field emission guns rely on the pure field emission effect, thermal field emission guns enhance the pure field emission effect by giving some thermal energy to the electrons in the metal, so that the required tunneling distance is shorter for successful escape from the surface. A Schottky emitter is a thermal field emitter that has been further enhanced by doping the surface of the emitter to reduce the work function.
The cold field emitter tip has the highest brightness of presently known emitters and is therefore the preferred choice for obtaining highest possible electron density in the smallest spot. Thus, electron microscopes equipped with cold cathode emitters are superbly suited to obtain high resolution, high quality images—especially at very low acceleration voltages. Extra advantages of cold emitters are their long lifetime and ease of use, which reduces the cost of ownership.
However, during operation continual adsorption and occasional desorption of residual gas molecules occurs on the emitting surface of cold field electron emitters. These adsorptions and desorptions lead to continuously degraded and momentarily instable emission current, respectively, so that the emitting surface has to be cleaned in regular intervals. Conventionally, this is done by a so-called “flashing” method. According to the flashing method, a heating current is supplied to the emitter so that the emitting surface heats up and the debris is removed from the surface. Heating the tip momentarily (flashing) can clean it, but new atoms and molecules quickly readsorb even in the best of vacuums. In addition, atoms may be ionized by the electron beam and subsequently accelerated back into the tip, causing physical sputtering of the tip itself. To minimize the current fluctuations, the electron source must be operated in a high vacuum environment.
Typically, the emitter chamber is pumped by an ion getter pump or a passive getter pump attached through the vacuum tubing. This configuration provides a sufficient pumping speed to achieve good average vacuum level in the emitter chamber. However, the relatively complicated configuration of the various internal parts within the emitter chamber may result in partially enclosed volumes which are only pumped at a considerably lower pumping speed. In addition, the dominant gas load in the emitter chamber is usually caused by electron stimulated desorption at internal parts. In particular, the extractor electrode or anode are illuminated by the electron beam and, therefore, are subject to electron stimulated desorption. As a result, the vacuum level near the emitter tip is considerably lower than the average vacuum level in the vacuum chamber. Therefore, the stability of the emission current is suboptimal.
It is therefore an object of the present invention to overcome at least partially the disadvantages associated with the prior art as they have been explained above.
This object is solved by a gun chamber according to claim 1, a charged particle apparatus according to claim 16, the use of a non-evaporable getter coating material according to claim 19, and an operating method according to claim 24.
Further advantages, features, aspects and details of the invention are evident from the dependent claims, the description and the accompanying drawings.
According to a first aspect of the present invention a gun chamber for a charged particle emitter is provided. The gun chamber includes at least one electrode coated with a non-evaporable getter (NEG) material.
Due to the NEG coating near the emitter, the volume close to the emitter is directly pumped by the NEG coating. Thus, the pumping speed near the emitter is considerably increased. For example, typical pumping speeds of such NEG coatings are up to 10 l/s per square centimeter of the coating. In addition, the NEG coating blocks the diffusion of gas from the bulk of the electrode material. Thus, extreme ultra-high vacuum levels of 10−13 Torr or better can be achieved near the emitter. As a result, the contamination of the emitter tip is significantly reduced and the stability and quality of the emission current is improved.
According to an embodiment of the present invention, the NEG coating is applied to a surface of a suppressor electrode. According to another embodiment of the present invention, the NEG coating is applied to a surface of an extractor electrode. According to still another embodiment of the present invention, the NEG coating is applied to a surface of an on anode. Typically, the NEG coating is applied to a surface facing the emitter.
Especially the extractor electrode and the second anode, which is typically used in modern electron guns, are illuminated by the electron beam produced at the emitter tip. For example, up to 90% of the beam current is absorbed by the extractor electrode and about 99% of the beam current passing the extractor electrode is subsequently absorbed by the anode. Therefore, electron-stimulated desorption is very high at the electrode surfaces facing the emitter. Due to the NEG coating, the electron-stimulated desorption can be significantly reduced so that stability and quality of the emission current is further improved.
According to an exemplary embodiment of the present invention, the NEG coating has a thickness in the range from 1 μm to 20 μm. According to another exemplary embodiment of the present invention, the NEG coating includes at least one of the materials selected from the group consisting of Ti, V, Zr, Hf, Fe or any mixture thereof. According to one typical embodiment of the present invention, the NEG coating includes TiZrV or TiV alloy.
NEG coatings of the above-described types may undergo numerous cycles of repeated activation without losing their pumping capability. For example, such NEG coatings may undergo more than 50 activation/pump cycles without any noticeable deterioration of the pumping speed.
According to a further embodiment of the present invention, an overlayer including Pt, Pd or PdAg is disposed on the NEG coating. According to a typical embodiment of the present invention, the overlayer has a thickness in the range from 0.1 μm to 2 μm.
An overlayer of Pt, Pd or a PdAg alloy can improve the pumping speed for H2 molecules. In particular, Pt, Pd or PdAg films have high sticking probabilities for H2 molecules but only relatively low binding energies both for surface adsorption and for solid solution. However, since the overlayer is coated on the NEG film the H2 can migrate through the overlayer to the NEG film where it may be stored with a negligibly low dissociation pressure.
According to still another embodiment of the present invention, an activation temperature of the NEG coating is in the range from 120° C. to 350° C. Typically, the activation temperature is in the range from 180° C. to 250° C.
Such activation temperatures are comparatively low so that the NEG coating can be activated with conventional heaters for UHV apparatus. Furthermore, the lower activation temperature may allow using aluminum alloy for the chamber walls. Aluminum alloy may loose its integrity at higher temperatures but is advantageous in view of manufacturing costs.
According to a typical embodiment of the present invention, a heater is disposed adjacent said NEG coating. According to another typical embodiment of the present invention, the heater is integrally formed with the at least one electrode coated with the NEG coating material. Typically, the heater is adapted to heat the NEG coating to an activation temperature thereof.
According to a typical embodiment of the present invention, the emitter is a cold field emission gun.
According to another aspect of the present invention, a charged particle beam apparatus equipped with a gun chamber of the above described type is provided.
In such a charged particle beam apparatus, the volume close to the emitter is directly pumped by the NEG coating. Thus, the pumping speed near the emitter is considerably increased and the NEG coating blocks the diffusion of gas from the bulk of the electrode material. Thus, extreme ultra-high vacuum levels of 10−13 Torr or better can be achieved near the emitter. As a result, the contamination of the emitter tip is significantly reduced and the stability and quality of the emission current is improved. Accordingly, the imaging quality of the charged particle apparatus can be improved.
According to an embodiment of the present invention, the charged particle beam apparatus further includes an NEG coating applied to an inner wall of a vacuum chamber of the charged particle beam apparatus. Typically, the NEG coating on the inner wall is located in a portion of the vacuum chamber surrounding the gun chamber.
According to still another aspect of the present invention, a non-evaporable getter (NEG) coating material is used for at least partially coating an electrode of a cold field emission electron beam apparatus. According to typical embodiments of the present invention, this electrode may be a suppressor electrode of a cold field emitter and/or an extractor electrode of a cold field emitter and/or an anode of a cold field emitter. Furthermore, in exemplary embodiments of the present invention the thickness of the NEG coating is in the range from 1 μm to 20 μm. According to a further embodiment of the present invention, the NEG coating material comprises at least one of the materials selected from the group consisting of Ti, V, Zr, Hf, Fe or any mixture thereof.
According to a further aspect of the present invention, a method of operating a charged particle beam apparatus is provided. The method includes the steps of heating an NEG coating of at least one electrode comprised in a gun chamber of a charged particle beam apparatus; baking the NEG coating at a temperature greater than or equal to its activation temperature until the NEG coating is activated for pumping; pumping a region adjacent to the emitter of the charged particle beam apparatus utilizing the activated NEG coating. Typically, the baking is performed for 6 hrs to 50 hrs. According to a further embodiment of the present invention, the pumping is carried out until a vacuum level of 10−13 Torr or better is attained.
Some of the above indicated and other more detailed aspects of the invention will be described in the following description and partially illustrated with reference to the figures. Therein:
According to the embodiment shown in
The NEG coating 150 is located near emitter tip 110 so that the pumping capacity of coating 150 is provided adjacent the emitter tip. Accordingly, the volume close to the emitter is directly pumped by NEG coating 110. Thus, the pumping speed near the emitter is considerably increased. For example, typical pumping speeds of such NEG coatings are up to 10 l/s per square centimeter of the coating. In addition, the NEG coating blocks the diffusion of gas from the bulk of the suppressor material. Thus, extreme ultra-high vacuum levels of 10−13 Torr or better can be achieved near emitter tip 110. As a result, the contamination of the emitter tip is significantly reduced and the stability and quality of the emission current is improved.
Next, a method aspect of the present invention is explained. Therefore, one should know that NEG materials have to be activated to exhibit sufficient pumping capacity. In order to activate the NEG material, it must be heated to at least its activation temperature which is typically in the range from 120° C. to 350° C. Therefore, a method of operating a charged particle beam apparatus according to the above-described configuration includes the steps of heating an NEG coating of at least one electrode comprised in a gun chamber of the charged particle beam apparatus; baking the NEG coating at a temperature greater than or equal to its activation temperature until the NEG coating is activated for pumping; and pumping a region adjacent to the emitter of the charged particle beam apparatus with the activated NEG coating. Typically, the baking step is performed for 6 hrs to 50 hrs. For example, sufficient results have been obtained for a Pd70Ag30/NEG system with about 24 hrs baking at 250° C. The pressure measured after the bakeout was 2×10−13 Torr.
Having thus described the invention in detail, it should be apparent for a person skilled in the art that various modifications can be made in the present invention without departing from the spirit and scope of the following claims.
Number | Date | Country | Kind |
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07008106 | Apr 2007 | EP | regional |