Heat-radiating tape carrier package and method for manufacturing the same

Abstract

A tape carrier package may include an interposer having a first surface and a second surface. The first surface of the interposer may be attached to an exposed active surface of a semiconductor chip. A heat sink may be attached to the second surface of the interposer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

Example, non-limiting embodiments of the present invention will be readily understood with reference to the following detailed description thereof provided in conjunction with the accompanying drawings, wherein like reference numerals designate like structural elements.

FIG. 1 is a cross-sectional view of a conventional tape carrier package.

FIG. 2 is a cross-sectional view of a tape carrier package in accordance with an example embodiment of the present invention.

FIGS. 3A to 3C are schematic views of a method that may be implemented to manufacture the tape carrier package of FIG. 2 in accordance with an example embodiment of the present invention.

FIGS. 4A to 4C are schematic views of a method that may be implemented to manufacture the tape carrier package of FIG. 2 in accordance with another example embodiment of the present invention.

FIGS. 5A to 5C are schematic views of a method that may be implemented to manufacture the tape carrier package of FIG. 2 in accordance with another example embodiment of the present invention.

FIG. 6 is a cross-sectional view of a tape carrier package in accordance with another example embodiment of the present invention.

Claims

1. A tape carrier package comprising: a semiconductor chip having an active surface and a back surface, the semiconductor chip having a plurality of chip pads provided on the active surface and a plurality of chip bumps formed on the chip pads; anda tape wiring substrate including a base film having a window, through which the active surface of the semiconductor chip is exposed, and wiring patterns formed on the base film, the wiring patterns including inner leads bonded to the chip bumps;an interposer having a first surface attached to the active surface of the semiconductor chip and a second surface opposite to the first surface; anda heat sink attached to the second surface of the interposer.

2. The tape carrier package of claim 1, wherein the interposer is formed from one of Si and a phase change material.

3. The tape carrier package of claim 1, wherein the interposer is formed of at least one bar.

4. The tape carrier package of claim 1, further comprising an encapsulant sealing the bonded portions between the semiconductor chip and the tape carrier package.

5. The tape carrier package of claim 4, wherein the height of the encapsulant above the active surface of the semiconductor chip is equal to or smaller than the height of the interposer.

6. The tape carrier package of claim 1, further comprising a housing attached to the back surface of the semiconductor chip.

7. A method for manufacturing a tape carrier package comprising: inner lead bonding a semiconductor element having an active surface to a tape wiring substrate having a window;attaching a first surface of an interposer to the active surface of the semiconductor element through the window; andattaching a heat sink to a second surface of the interposer.

8. The method of claim 7, wherein the semiconductor element is a semiconductor chip.

9. The method of claim 8, wherein the interposer is formed from one of Si and a phase change material.

10. The method of claim 8, wherein the interposer is formed of at least one bar.

11. The method of claim 8, further comprising forming an encapsulant sealing the bonded portions between the semiconductor chip and the tape wiring substrate.

12. The method of claim 11, wherein the height of the encapsulant above the active surface of the semiconductor chip is equal to or smaller than the height of the interposer.

13. The method of claim 8, further comprising applying an epoxy molding compound to the bonded portions between the semiconductor chip and the tape wiring substrate.

14. The method of claim 13, wherein the interposer is attached to a central region of the active surface of the semiconductor chip through the epoxy molding compound.

15. The method of claim 13, further comprising forming an encapsulant using the epoxy molding compound for sealing the bonded portions between the semiconductor chip and the tape wiring substrate.

16. The method of claim 15, wherein the height of the encapsulant above the active surface of the semiconductor chip is equal to or smaller than the height of the interposer.

17. The method of claim 8, further comprising attaching a housing to a back surface of the semiconductor chip.

18. The method of claim 7, wherein the semiconductor element is a wafer including a plurality of semiconductor chips, further comprising: separating the semiconductor chips from the wafer.

19. The method of claim 18, wherein the interposer is formed from one of Si and a phase change material.

20. The method of claim 18, wherein the interposer is formed of at least one bar.

21. The method of claim 18, further comprising forming an encapsulant sealing the bonded portions between the semiconductor chip and the tape wiring substrate.

22. The method of claim 21, wherein the height of the encapsulant above the active surface of the semiconductor chip is equal to or smaller than the height of the interposer.

23. The method of claim 18, further comprising attaching a housing to a back surface of the semiconductor chip.