The technical field relates to a high power module, in particular to a high power module capable of achieving low stray inductance and uniform current density.
In general, a currently available high power module is integrated with multiple power chips so as to achieve high-current output, such that the high power module can satisfy the requirements of various vehicles and other relevant equipment, such as electric vehicles, motorcycles, buses, trucks, charging stations, etc. However, when the high power module is applied to a power inverter, the stray inductance of the switching circuits will result in overshoot during the switching period. Besides, the oscillation thereof will also incur electromagnetic interference (EMI) and serious switching loss.
Further, the stray inductance of currently available high power modules is very hard to be less than 10 nH (nano henry).
Moreover, currently available high power modules are likely to suffer the problem of non-uniform current density.
An embodiment of the disclosure relates to a high power module, which includes a substrate, a plurality of first power chips, a plurality of second power chips, a positive electrode plate, a negative electrode plate and an output electrode plate. The substrate includes a first metal area, a second metal area, and a third metal area disposed between the first metal area and the second metal area. The first power chips are disposed on the third metal area and the first power chips are connected to the first metal area via a plurality of first connection elements. The second power chips are disposed on the second metal area and the second power chips are connected to the third metal area via a plurality of second connection elements. The positive electrode plate is C-shaped and the positive electrode plate is connected to the first metal area. The negative electrode plate is C-shaped and the negative electrode is connected to the second metal area. The direction of the opening of the negative electrode plate is contrary to the direction of the opening of the positive electrode plate. The output electrode plate is connected to one end of the third metal area.
Further scope of applicability of the present application will become more apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the disclosure, are given by way of illustration only, since various changes and modifications within the spirit and scope of the disclosure will become apparent to those skilled in the art from this detailed description.
The disclosure will become more fully understood from the detailed description given herein below and the accompanying drawings which are given by way of illustration only, and thus are not limitative of the disclosure and wherein:
In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are schematically shown in order to simplify the drawing. It should be understood that, when it is described that an element is “coupled” or “connected” to another element, the element may be “directly coupled” or “directly connected” to the other element or “coupled” or “connected” to the other element through a third element. In contrast, it should be understood that, when it is described that an element is “directly coupled” or “directly connected” to another element, there are no intervening elements.
Please refer to
The substrate 10 includes a first metal area 101, a second metal area 102, a third metal area 103, a fourth metal area 104, a fifth metal area 105, a first upper isolation area 106-1, a first lower isolation area 106-2, a second upper isolation area 107-1 and a second lower isolation area 107-2. The first metal area 101, the second metal area 102 and the third metal area 103 are rectangular blocks. The third metal area 103 is disposed between the first metal area 101 and the second metal area 102. The fourth metal area 104 is disposed between the first metal area 101 and the third metal area 103, and the fourth metal area 104 is connected to the gates of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6. The first upper isolation area 106-1 and the first lower isolation area 106-2 are disposed at the two sides of the fourth metal area 104 respectively in order to isolate the fourth metal area 104 from the first metal area 101 and the third metal area 103. The fifth metal area 105 is disposed between the second metal area 102 and the third metal area 103, and the fifth metal area 105 is connected to the gates of the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6. The second upper isolation area 107-1 and the second lower isolation area 107-2 are disposed at the two sides of the fifth metal area 105 respectively in order to isolate the fifth metal area 105 from the third metal area 103 and the second metal area 102.
The fourth metal area 104 and the fifth metal area 105 are connected to an external gate driving circuit (not shown in the drawings). Thus, the gates of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6 can connect to the external gate driving circuit via the fourth metal area 104. Likewise, the gates of the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6 can also connect to the external gate driving circuit via the fifth metal area 105.
Please refer to
As shown in
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As shown in
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As described above, the positive electrode plate 13 and the negative electrode plate 14 of the high power module 1 do not directly in a flat manner contact the first metal area 101 and the second metal area 102. That is to say, the positive electrode plate 13 and the negative electrode plate 14 contact the first metal area 101 and the second metal area 102 via the fingerlike positive pins 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 and fingerlike negative pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6 respectively. Moreover, the quantities of the fingerlike positive pins 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 and negative pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6 are also corresponding to the quantities of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6 and the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6 respectively. The above design can effectively reduce the stray inductance of the high power module 1. In one embodiment, all pins are aligned with all power chips respectively.
Please refer to
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F<Y<2F (1)
Further, as shown in
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As shown in
As shown in
Accordingly, the positive electrode plate 13 and the negative electrode plate 14 can achieve back coupling or antiphase coupling in both AC phase and DC phase, such that the stray inductance of the high power module 1 can be effectively diminished.
As shown in
The high power module 1 of the embodiment has special structure design and conforms to some size requirements. As shown in
F≤X<F+B (2)
In Equation (2), X stands for the width of each of the positive pins 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 and the negative pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6. F stands for the width of each of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6 and the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6. B stands for the interval between any two adjacent ones of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6 or the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6.
In addition, the width P of the positive electrode plate 13 is greater than the sum of the total of the widths F of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6, the width M of the central recess of the positive electrode plate 13 and the total of intervals B between the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6. And the width P of the positive electrode plate 13 is less than the width W of the first metal area 101, as shown in Equation (3) given below:
W>P>(N*F+M+(N−2)*B) (3)
In Equation (3), P stands for the width of the positive electrode plate 13. W stands for the width of the first metal area 101. N stands for the quantity of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6. F stands for the width of each of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6. M stands for the width of the central recess of the positive electrode plate 13. B stands for the interval between any two adjacent ones of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6.
The structures of the negative electrode plate 14 and the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6 is identical the structures of the positive electrode plate 13 and the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6, so will not be further described herein.
Besides, the stray inductance of the high power module 1 of the embodiment can also be further reduced via the widened positive terminal 131, negative terminal 141 and output electrode plate 15. The structure of the negative terminal 141 is similar to that of the positive terminal 131, so will not be further described herein.
Further, the width Pt1 of the connection end, the positive terminal 131 connected to the connection portion 132, is equal to the width P of the positive electrode plate 14. The width Pt2 of the other end of the positive terminal 131 is less than the width Pt1. And the width Pt2 is greater than or equal to a value of the width Pt1 subtracted by two of the widths F, as shown in Equation (4) given below:
Pt1(=W)>Pt2≥(Pt1−2F) (4)
In Equation (4), Pt2 stands for the width of the other end of the positive terminal 131. Pt1 stands for the width of the connection end, the positive terminal 131 connecting to the connection portion 132. F stands for the width of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6. The structure of the negative terminal 141 is similar to that of the positive terminal 131, so will not be further described herein.
The width J of the output electrode plate 15 is greater than the width F of one first power chip (or one second power chip), but less than the width 2F of two first power chips (or two second power chips), as shown in Equation (5) given below:
F<J<2F (5)
Via the above circuit design and structure design, the high power module 1 can effectively reduce the stray inductance thereof to be less than 10 nH (nano henry) when the switching frequency is at about 10 MHz. Thus, the high power module 1 can effectively prevent from overshoot and EMI, and the high power module 1 can effectively decrease the switching loss. Therefore, the service life of the high power module 1 can be extended and the performance thereof can be enhanced.
Accordingly, the high power module 1 can be effectively applied to various vehicle and other relevant equipment. A simulation experiment is performed for the embodiment by Q3D software (stray inductance extractor software) and the experimental data of the simulation experiment are as shown in Table 1 given below:
According to the above experimental data, the structure and the circuit design of the high power module 1 of the embodiment can actually reduce the stray inductance. The stray inductance of the high power module 1 can be lower than 10 nH (nano henry).
Please refer to
As set forth above, the current density, from the positive terminal 13 to the negative terminal 141, of the high power module 1 can be surely less than 20A/mm2 (when the high power module 1 operates at the power below 10 kw). Thus, the temperature of the third metal area 103 can be kept within an acceptable range (100° C.). Accordingly, the high power module 1 will not malfunction as a result of excessively high temperature. In general, when the high power module 1 operates at the power below 10 kw, the current densities of the positive terminal 131, the negative terminal 141 and the output electrode plate 15 of the high power module 1 can be less than 20A/mm2.
The embodiment just exemplifies the disclosure and is not intended to limit the scope of the disclosure. Any equivalent modification and variation according to the spirit of the disclosure is to be also included within the scope of the following claims and their equivalents.
Please refer to
The substrate 20 includes a first metal area 201, a second metal area 202, a third metal area 203, a fourth metal area 204, a fifth metal area 205, a first upper isolation area 206-1, a first lower isolation area 206-2, a second upper isolation area 207-1 and a second lower isolation area 207-2. The third metal area 203 is disposed between the first metal area 201 and the second metal area 202. The fourth metal area 204 is disposed between the first metal area 201 and the third metal area 203, and the fourth metal area 204 is connected to the gates of the first power chips 21-1, 21-2, 21-3, 21-4, 21-5, 21-6. The first upper isolation area 206-1 and the first lower isolation area 206-2 are disposed at the two sides of the fourth metal area 204 respectively in order to isolate the fourth metal area 204 from the first metal area 201 and the third metal area 203. The fifth metal area 205 is disposed between the second metal area 202 and the third metal area 203, and the fifth metal area 205 is connected to the gates of the second power chips 22-1, 22-2, 22-3, 22-4, 22-5, 22-6. The second upper isolation area 207-1 and the second lower isolation area 207-2 are disposed at the two sides of the fifth metal area 205 respectively in order to isolate the fifth metal area 205 from the third metal area 203 and the second metal area 202. Besides, the output electrode plate 25 is connected to one end of the third metal area 103 and has a screw hole 2511.
The fourth metal area 204 and the fifth metal area 205 are connected to an external gate driving circuit (not shown in the drawings). Alternatively, the gate driving circuit can be directly disposed on the first metal area 201, the second metal area 202, the third metal area 203, the fourth metal area 204 and the fifth metal area 205, which is similar to the structure shown in
As shown in
As shown in
The structures of the aforementioned elements of the high power module 2 are similar to those of the first embodiment, so will not be further described herein. The difference between this embodiment and the first embodiment is that the positive pins 233-1, 233-2, 233-3 have different widths and the positive pins 233-4, 233-5, 233-6 also have different widths. Similarly, the negative pins 243-1, 243-2, 243-3 have different widths and the negative pins 243-4, 243-5, 243-6 also have different widths.
Please refer to
The effective channel widths of the positive pins 233-1, 233-2, 233-3 of the first group G1 can be adjusted by different ways. In the embodiment, the effective channel widths of the positive pins 233-1, 233-2, 233-3 of the first group G1 progressively increase based on an arithmetic sequence in the direction away from the central axis PA of the positive electrode plate 23 (i.e. the effective channel widths of the positive pins 233-1, 233-2, 233-3 progressively increase from the positive pin 233-3 to the positive pin 233-1), as shown in Equation (6) given below:
R
1(n1−1)/(n1+1),R1n1/(n1+1),R1 (6)
In Equation (6), the effective channel width R3 of the positive pin 233-3 is R1(n1−1)/(n1+1). The effective channel width R2 of the positive pin 233-2 is R1n1/(n1+1). The effective channel width of the positive pin 233-1 is R1.
The common difference of the arithmetic sequence is the effective channel width R1 of the positive pin 233-1, which is most away from the central axis PA of the positive electrode plate 23, divided by the total quantity (n1+1) of the positive pins 233-1, 233-2, 233-3 of the first group G1 and the gate driving circuit (counted as one), as shown in Equation (7):
(1/n1+1)*R1 (7)
In Equation (7), n1 stands for the quantity of the positive pins 233-1, 233-2, 233-3 of the first group G1. R1 stands for the effective channel width of the positive pin 233-1 which is most away from the central axis PA of the positive electrode plate 23. In the embodiment, the effective channel width R3 of the positive pin 233-3 is R1/2. The effective channel width R2 of the positive pin 233-2 is 3R1/4. The effective channel width of the positive pin 233-1 is R1.
In a similar way, the effective channel widths of the positive pins 233-4, 233-5, 233-6 of the second group G2 progressively increase in the direction away from the central axis PA of the positive electrode plate 23.
In the embodiment, the effective channel widths of the positive pins 233-4, 233-5, 233-6 of the second group G2 progressively increase based on an arithmetic sequence in the direction away from the central axis PA of the positive electrode plate 23 (i.e. the effective channel widths of the positive pins 233-4, 233-5, 233-6 progressively increase from the positive pin 233-4 to the positive pin 233-6), as shown in Equation (8) given below:
R
6(n2−1)/(n2+1),R6n2/(n2+1),R6 (8)
In Equation (8), the effective channel width R4 of the positive pin 233-4 is R6(n2−1)/(n2+1). The effective channel width R5 of the positive pin 233-5 is R6n2/(n2+1). The effective channel width of the positive pin 233-6 is R6.
The common difference of the arithmetic sequence is the effective channel width R6, of the positive pin 233-6 which is most away from the central axis PA of the positive electrode plate 23, divided by the total quantity (n2+1) of the positive pins 233-4, 233-5, 233-6 of the second group G2 and the gate driving circuit, as shown in Equation (9):
(1/n2+1)*R6 (9)
In Equation (9), n2 stands for the quantity of the positive pins 233-4, 233-5, 233-6 of the second group G2. R6 stands for the effective channel width of the positive pin 233-6 which is most away from the central axis PA of the positive electrode plate 23. In the embodiment, the effective channel width R4 of the positive pin 233-4 is R6/2. The effective channel width R5 of the positive pin 233-5 is 3R6/4. The effective channel width of the positive pin 233-6 is R6.
Alternatively, the effective channel widths of the positive pins 233-1, 233-2, 233-3, 233-4, 233-5, 233-6 can progressively increase based on other arithmetic sequences, which can also realize similar technical effect.
Please refer to
The effective channel widths of the negative pins 243-1, 243-2, 243-3 of the third group G3 can be adjusted by different ways. In the embodiment, as shown in
R
1′(n3−1)/(n3+1),R1′n3/(n3+1),R1′ (10)
The common difference of the arithmetic sequence is as shown in Equation (11):
(1/n3+1)*R1′ (11)
In Equation (11), n3 stands for the quantity of the negative pins 243-1, 243-2, 243-3 of the third group G3. R1′ stands for the effective channel width of the negative pin 243-1, which is most away from the central axis NA of the negative electrode plate 24. In the embodiment, the effective channel width R3′ of the negative pin 243-3 is R1′/2. The effective channel width R2′ of the negative pin 243-2 is 3R1′/4. The effective channel width of the negative pin 243-1 is R1.
Likewise, the effective channel widths of the negative pins 243-4, 243-5, 243-6 of the fourth group G4 also progressively increase in the direction away from the central axis NA of the negative electrode plate 24.
In the embodiment, the effective channel widths of the negative pins 243-4, 243-5, 243-6 of the fourth group G4 progressively increase based on an arithmetic sequence in the direction away from the central axis NA of the negative electrode plate 24 (i.e. the effective channel widths of the negative pins 243-4, 243-5, 243-6 progressively increase from the negative pin 243-4 to the negative pin 243-6, as shown in Equation (12) given below:
R
6′(n4−1)/(n4+1),R6′n4/(n4+1),R6′ (12)
The common difference of the arithmetic sequence is as shown in Equation (13):
(1/n4+1)*R6′. (13)
In Equation (13), n4 stands for the quantity of the negative pins 243-4, 243-5, 243-6 of the fourth group G4. R6′ stands for the effective channel width of the negative pin 243-6, which is most away from the central axis NA of the negative electrode plate 24. In the embodiment, the effective channel width R4′ of the negative pin 243-4 is R6′/2. The effective channel width R5′ of the negative pin 243-5 is 3R6′/4. The effective channel width of the negative pin 243-6 is R6′. The structure of the negative electrode plate 24 is analogous to that of the positive electrode plate 24, so will not be further described herein.
Alternatively, the effective channel widths of the negative pins 243-1, 243-2, 243-3, 243-4, 243-5, 243-6 can progressively increase based on other arithmetic sequences, which can also attain similar technical effect.
The distances between of the positive pins 233-1, 233-2, 233-3, 233-4, 233-5, 233-6 and the screw hole 2311 of the positive terminal 231 (the input point of current) are different to each other. Also, the distances between of the negative pins 243-1, 243-2, 243-3, 243-4, 243-5, 243-6 and the screw hole 2411 (the input point of current) of the negative terminal 241 are different to each other. For the reason, the high power module 2 may have non-uniform current density, which influences the performance of the high power module 2. However, the above special structure design of the embodiment can allow the positive pins 233-1, 233-2, 233-3, 233-4, 233-5, 233-6 and the negative pins 243-1, 243-2, 243-3, 243-4, 243-5, 243-6 have different effective channel widths in order to compensate for the above problem of non-uniform current density. Accordingly, the performance of the high power module 2 can be improved.
The embodiment just exemplifies the disclosure and is not intended to limit the scope of the disclosure. Any equivalent modification and variation according to the spirit of the disclosure is to be also included within the scope of the following claims and their equivalents.
It is worthy to point out that the stray inductance of currently available high power modules is very hard to be less than 10 nH (nano henry) because of the defective circuit design thereof. Thus, the currently available high power modules cannot be effectively applied to various vehicles or other relevant equipment. However, according to one embodiment of the disclosure, as shown in
Besides, according to one embodiment of the disclosure, as there is a distance between the positive electrode plate 23 and the negative electrode plate 24 of the high power module 2, the positive terminal 231 does not overlap the negative terminal 241 in the vertical direction (the normal vector of the substrate 20). In addition, both of the positive electrode plate 23 and the negative electrode plate 24 can achieve back coupling or antiphase coupling. Accordingly, the stray inductance of the high power module 2 can be further decreased.
Moreover, according to one embodiment of the disclosure, the high power module 2 have the widened positive terminal 231, negative terminal 241 and output terminal 251 because of the special structure design thereof, which can increase the sectional areas of these terminals. Hence, the stray inductance of the high power module 2 can be further reduced.
Furthermore, currently available high power modules are likely to suffer the problem of non-uniform current density due to the defective circuit design and structure design, which further deteriorates the performance thereof. However, according to one embodiment of the disclosure, as shown in
Please refer to
The substrate 30 includes a first metal area 301, a second metal area 302, a third metal area 303, a fourth metal area 304, a fifth metal area 305, a first upper isolation area 306-1, a first lower isolation area 306-2, a second upper isolation area 307-1 and a second lower isolation area 307-2. The output electrode plate 35 has a screw hole 3511.
The fourth metal area 304 and the fifth metal area 305 are connected to an external gate driving circuit (not shown in the drawings). Alternatively, the gate driving circuit can be directly disposed on the first metal area 301, the second metal area 302, the third metal area 303, the fourth metal area 304 and the fifth metal area 305, which is similar to the structure shown in
As shown in
As shown in
The structures of the aforementioned elements of the high power module 3 are similar to those of the first embodiment, so will not be further described herein. The difference between this embodiment and the first embodiment is that the positive pins 333-1, 333-2, 333-3 have through holes H1-1, H2-1, H3-1 respectively and the positive pins 333-4, 333-5, 333-6 have through holes H4-1, H5-1, H6-1 respectively. In a similar way, the negative pins 343-1, 343-2, 343-3, 343-4, 343-5, 343-6 also have through holes H1-2, H2-2, H3-2, H4-2, H5-2, H6-2 respectively.
Please refer to
The effective channel widths of the positive pins 333-1, 333-2, 333-3 of the first group G1 can be adjusted by different ways. In the embodiment, the positive pins 333-1, 333-2, 333-3 have the same width, but the sizes/areas of the through holes H1-1, H2-1, H3-1 in descending order is H3-1>H2-1>H1-1. Therefore, the effective channel width of the positive pin 333-1 is calculated by deducting the diameter Dm1 of the through hole H1-1 from the width X of the positive pin 333-1, as shown in Equation (14) given below:
X-Dm1=Z1 (14)
In Equation (14), X stands for the width of the positive pin 333-1 (since the positive pins 333-1, 333-2, 333-3, 333-4, 333-5, 333-6 have the same width, all of which are marked as X). Dm1 stands for the diameter of the through hole H1-1. Z1 stands for the effective channel width of the positive pin 333-1 (Z1=Z1a+Z1b).
The effective channel width Z2 of the positive pin 333-2 is calculated by deducting the diameter Dm2 of the through hole H2-1 from the width X of the positive pin 333-2, as shown in Equation (15) given below:
X−D
m2
=Z
2 (15)
In Equation (15), X stands for the width of the positive pin 333-2. Dm2 stands for the diameter of the through hole H2-1. Z2 stands for the effective channel width of the positive pin 333-2 (Z2=Z2a+Z2b).
The effective channel width Z3 of the positive pin 333-3 is calculated by deducting the diameter Dm3 of the through hole H3-1 from the width X of the positive pin 333-3, as shown in Equation (16) given below:
X-Dm3=Z3 (16)
In Equation (16), X stands for the width of the positive pin 333-3. Dm3 stands for the diameter of the through hole H3-1. Z3 stands for the effective channel width of the positive pin 333-3 (Z3=Z3a+Z3b).
The effective channel widths of the positive pins 333-1, 333-2, 333-3 of the first group G1 can be adjusted by different ways. In the embodiment, the effective channel widths of the positive pins 333-1, 333-2, 333-3 are the widths of the positive pins 333-1, 333-2, 333-3 minus the diameters of the corresponding through holes H1-1, H2-1, H3-1 respectively. Thus, the effective channel widths of the positive pins 333-1, 333-2, 333-3 progressively increase based on an arithmetic sequence in the direction away from the central axis PA of the positive electrode plate 33 (i.e. the effective channel widths of the positive pins 333-1, 333-2, 333-3 progressively increase from the positive pin 333-3 to the positive pin 333-1), as shown in Equation (17) given below:
Z
1(n1−1)/(m+1),Z1n1/(m+1),Z1 (17)
In Equation (17), the effective channel width of the positive pin 333-3 is Z1(n1−1)/(n1+1). The effective channel width of the positive pin 333-2 is Z1n1/(n1+1). The effective channel width of the positive pin 333-1 is Z1.
The common difference of the arithmetic sequence is the effective channel width Z1 of the positive pin 333-1, which is most away from the central axis PA of the positive electrode plate 33, divided by the total quantity (n1+1) of the positive pins 333-1. 333-2. 333-3 of the first group G1 and the gate driving circuit (counted as one), as shown in Equation (18) given below:
(1/n1+1)*Z1 (18)
In Equation (18), n1 stands for the quantity of the positive pins 333-1, 333-2, 333-3 of the first group G1. Z1 stands for the effective channel width of the positive pin 333-1 which is most away from the central axis PA of the positive electrode plate 33. As described above, the effective channel width Z1 is calculated by deducting the diameter of the corresponding through hole H1-1 from the width of the positive pin 333-1. In the embodiment, the effective channel width Z3 of the positive pin 333-3 is Z1/2. The effective channel width Z2 of the positive pin 333-2 is 3Z1/4. The effective channel width of the positive pin 333-1 is Z1.
As shown in
The effective channel widths Z4, Z5, Z6 of the positive pins 333-4, 333-5, 333-6 of the second group G2 can be adjusted by different ways. In the embodiment, the positive pins 333-4, 333-5, 333-6 have the same width, but the sizes of the through holes H4-1, H5-1, H6-1 in descending order is H4-1>H5-1>H6-1. Therefore, the effective channel width of the positive pin 333-4 is calculated by deducting the diameter Dm4 of the through hole H4-1 from the width X of the positive pin 333-4, as shown in Equation (19) given below:
X−D
m4
=Z
4 (19)
In Equation (19), X stands for the width of the positive pin 333-4. Dm4 stands for the diameter of the through hole H4-1. Z4 stands for the effective channel width of the positive pin 333-4 (Z4=Z4a+Z4b).
The effective channel width Z5 of the positive pin 333-5 is calculated by deducting the diameter Dm5 of the through hole H5-1 from the width X of the positive pin 333-5, as shown in Equation (20) given below:
X-Dm5=Z5 (20)
In Equation (20), X stands for the width of the positive pin 333-5. Dm5 stands for the diameter of the through hole H5-1. Z5 stands for the effective channel width of the positive pin 333-5 (Z5=Z5a+Z5b).
The effective channel width Z6 of the positive pin 333-6 is calculated by deducting the diameter Dm6 of the through hole H6-1 from the width X of the positive pin 333-6, as shown in Equation (21) given below:
X-Dm6=Z6 (21)
In Equation (21), X stands for the width of the positive pin 333-6. Dm6 stands for the diameter of the through hole H6-1. Z6 stands for the effective channel width of the positive pin 333-6 (Z6=Z6a+Z6b).
The effective channel widths Z4, Z5, Z6 of the positive pins 333-4, 333-5, 333-6 of the second group G2 can be adjusted by different ways. In the embodiment, the effective channel widths of the positive pins 333-4, 333-5, 333-6 are the widths X of the positive pins 333-4, 333-5, 333-6 minus the diameters Dm4, Dm5, Dm6 of the corresponding through holes H4-1, H5-1, H6-1 respectively. Thus, the effective channel widths Z4, Z5, Z6 of the positive pins 333-4, 333-5, 333-6 progressively increase based on an arithmetic sequence in the direction away from the central axis PA of the positive electrode plate 33 (i.e. the effective channel widths of the positive pins 333-4, 333-5, 333-6 progressively increase from the positive pin 333-4 to the positive pin 333-6), as shown in Equation (22) given below:
Z
6(n2−1)/(n2+1),Z6n2/(n2+1),Z6 (22)
In Equation (23), the effective channel width of the positive pin 333-4 is Z6(n2−1)/(n2+1). The effective channel width of the positive pin 333-5 is Z6n2/(n2+1). The effective channel width of the positive pin 333-6 is Z6.
The common difference of the arithmetic sequence is the effective channel width Z6 of the positive pin 333-6, which is most away from the central axis PA of the positive electrode plate 33, divided by the total quantity (n2+1) of the positive pins 333-4. 333-5. 333-6 of the second group G2 and the gate driving circuit, as shown in Equation (23) given below:
(1/n2+1)*Z6 (23)
In Equation (23), n2 stands for the quantity of the positive pins 333-4, 333-5, 333-6 of the second group G2. Z6 stands for the effective channel width of the positive pin 333-6 which is most away from the central axis PA of the positive electrode plate 33. As described above, the effective channel width Z6 is calculated by deducting the diameter of the corresponding through hole H6-1 from the width of the positive pin 333-6. In the embodiment, the effective channel width Z4 of the positive pin 333-4 is Z6/2. The effective channel width Z5 of the positive pin 333-5 is 3Z6/4. The effective channel width of the positive pin 333-6 is Z6.
The structure of the negative electrode plate 34 is identical to that of the positive electrode plate 33, so will not be further described herein. In the embodiment, the effective channel width Z3′ of the negative pin 343-3 is Z1′/2. The effective channel width Z2′ of the negative pin 343-2 is 3Z1′/4. The effective channel width of the negative pin 343-1 is Z1′. The effective channel width Z6′ of the negative pin 343-4 is Z6′/2. The effective channel width Z5′ of the negative pin 343-5 is 3Z6′/4. The effective channel width of the negative pin 343-6 is Z6′.
The distances between the positive pins 333-1, 333-2, 333-3, 333-4, 333-5, 333-6 and the screw hole 3311 of the positive terminal 331 (the input point of current) are different to each other. Also, the distances between the negative pins 343-1, 343-2, 343-3, 343-4, 343-5, 343-6 and the screw hole 3411 (the input point of current) of the negative terminal 341 are different to each other. For the reason, the high power module 3 may have non-uniform current density, which influences the performance of the high power module 3. However, the above special structure design of the embodiment allows the positive pins 333-1, 333-2, 333-3, 333-4, 333-5, 333-6 and the negative pins 343-1, 343-2, 343-3, 343-4, 343-5, 343-6 to have different effective channel widths in order to compensate for the above problem of non-uniform current density.
Accordingly, the performance of the high power module 3 can be further enhanced. As shown in
The embodiment just exemplifies the disclosure and is not intended to limit the scope of the disclosure. Any equivalent modification and variation according to the spirit of the disclosure is to be also included within the scope of the following claims and their equivalents.
To sum up, according to one embodiment of the disclosure, the stray inductances of the positive terminal (P terminal/DC+) and the negative terminal (N terminal/DC−) can be less than 10 nH (nano henry) and the current density thereof can be less than 20A/mm2 (when the high power module operates at the power below 10 kw). The other embodiments of the disclose can also realize similar technical effect. The positive electrode plate and the negative electrode plate of each high power module are C-shaped. In addition, the direction of the opening of the positive electrode plate is opposite to the direction of the opening of the negative electrode plate (i.e. the positive electrode plate and the negative electrode plate are disposed back to back). Further, both of the positive electrode plate and the negative electrode plate can achieve back coupling or antiphase coupling. Accordingly, the stray inductance of the high power module can be lowered, so can be comprehensively applied to various vehicles and other relevant equipment, such as electric vehicles, motorcycles, buses, trucks, charging stations, etc.
Besides, according to one embodiment of the disclosure, as there is a distance between the positive electrode plate and the negative electrode plate of the high power module, the positive terminal does not overlap the negative terminal in the vertical direction (the normal vector of the substrate). In addition, both of the positive electrode plate and the negative electrode plate can achieve back coupling or antiphase coupling. Accordingly, the stray inductance of the high power module can be further decreased.
Moreover, according to one embodiment of the disclosure, the high power module have the widened positive terminal, negative terminal and output terminal because of the special structure design thereof, which can increase the sectional areas of these terminals. For the reason, the stray inductance of the high power module can be further decreased.
In one embodiment of the disclosure, the positive electrode plate of the high power module includes several positive pins and the effective channel widths of the positive pins progressively increase based on an arithmetic sequence in the direction away from the central axis of the positive electrode plate. In one embodiment, the negative pins also have the corresponding structures. In one embodiment, the effective channel widths of the positive pins are adjusted by changing the sizes of several holes thereon. Accordingly, the high power module can achieve uniform currently density.
It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed embodiments. It is intended that the specification and examples be considered as exemplary only, with a true scope of the disclosure being indicated by the following claims and their equivalents.