Claims
- 1. A process for depositing a layer on a substrate on a heater in a chamber, said process comprising the steps of:
- heating said heater; A
- pressurizing said chamber;
- introducing a reactant gas and a source gas into said chamber, said source gas comprising a metal and a halogen
- applying RF energy to form a plasma adjacent to the substrate; and
- ramping the flow of said reactant gas, said source gas, and a plasma gas, to avoid thermally shocking said heater.
- 2. The process of claim 1 wherein said introducing step comprises providing a reactant-sources gas flow ratio of less than about 100:1.
- 3. The process of claim 1 wherein said metal comprises titanium.
- 4. The process of claim 3 wherein said source gas comprises titanium tetrachloride and helium.
- 5. The process of claim 4 wherein said reactant gas comprises hydrogen.
- 6. The process of claim 1 wherein said metal comprises titanium and said halogen comprises chlorine.
- 7. The process of claim 6 wherein said source gas comprises titanium tetrachloride and helium, said reactant gas comprises hydrogen, and said plasma gas comprises argon.
- 8. The process of claim 1 wherein said chamber is at a pressure of between about 1-10 torr.
- 9. The process of claim 8 wherein said chamber is at a pressure of between about 4.5-5 torr.
- 10. The process of claim 1 wherein said RF energy is applied at a frequency of between about 300-450 kHz and at a power of between about 200-2000 Watts.
- 11. The process of claim 1 further comprising the step of:
- reducing said RF energy from a first power level to a second power level while maintaining said plasma, said reducing step avoiding thermally shocking said heater and reducing particulate contamination within said chamber.
- 12. The process of claim 1 further comprising the steps of heating said heater to a first temperature and then heating said heater to a processing temperature wherein said first temperature is higher than said processing temperature.
- 13. The process of claim 12 wherein said first temperature is higher than said processing temperature by at least about 1%.
- 14. The process of claim 12 wherein said first temperature is about 635.degree. C. and said processing temperature is about 625.degree. C.
- 15. The process of claim 1 further comprising the steps of:
- flowing chlorine gas into said chamber at a selected flow rate and a selected chamber pressure; and
- applying RF energy to form a plasma within said chamber.
- 16. The process of claim 1 wherein said heater is heated to a temperature above about 500.degree. C.
- 17. The process of claim 16 wherein said heater is heated to a temperature above about 600.degree. C.
- 18. The process of claim 17 wherein said heater is heated to a temperature above about 700.degree. C.
- 19. The process of claim 1 wherein said heater is heated to a temperature of between about 550.degree. C. and about 650.degree. C.
- 20. The process of claim 1 wherein said source gas is liquid titanium tetrachloride heated to about 60.degree. C. and bubbled with helium gas flowing at about 400 sccm into said liquid titanium tetrachloride.
- 21. The process of claim 1 wherein said introducing step comprises providing a reactant:source gas flow ratio of less than about 250:1.
- 22. The process of claim 1 wherein said introducing step comprises providing a reactant:source gas flow ratio of between about 20:1 and about 50:1.
- 23. A computer-readable medium having a computer-readable program embodied therein for directing operation of a deposition apparatus of the type having a heater pedestal disposed within a chamber and a gas delivery system coupled to the chamber, the apparatus being operable under the direction of a controller, the computer-readable program directing operation of the apparatus in accordance with the following:
- (a) heating a substrate with the heater;
- (b) pressurizing the chamber;
- (c) introducing a reactant gas and a source gas into said chamber, said source gas comprising a metal and a halogen;
- (d) applying RF energy to form a plasma adjacent to the substrate; and
- (e) ramping the flow of the reactant gas, the source gas, and a plasma gas, to avoid.sub.-- thermally shocking the heater.
- 24. A substrate processing apparatus, comprising:
- a chamber;
- a heater disposed within the chamber;
- a gas distribution system fluidly coupled to the chamber;
- pressure control system coupled to the chamber;
- a plasma generation system coupled to the chamber; and
- a controller coupled to the heater, the gas distribution system, the plasma generation system, the controller including a computer-readable medium having a computer-readable program embodied therein for directing operation of the apparatus in accordance with the following:
- (a) heating a substrate with the heater;
- (b) pressurizing the chamber;
- (c) introducing a reactant gas and a source gas into said chamber, said source gas comprising a metal and a halogen;
- (d) applying RF energy to form a plasma adjacent to the substrate; and
- (e) ramping the flow of the reactant gas, the source gas, and a plasma gas, to avoid.sub.-- thermally shocking the heater.
- 25. The apparatus of claim 24 wherein said heater comprises a pedestal having a surface capable of supporting a substrate, said pedestal comprising a heater assembly capable of resistively heating to a first temperature of at least about 400.degree. C. and said plasma generation system comprises an RF generator and an RF plane, said RF plane being disposed in said pedestal a distance less than about 200 mil below said surface.
- 26. The apparatus of claim 25 wherein said distance is less than about 60 mil.
- 27. The apparatus of claim 25 wherein said first temperature is at least 500.degree. C.
- 28. The apparatus of claim 25 wherein said first temperature is at least 600.degree. C.
- 29. The apparatus of claim 24 wherein said gas distribution system includes a liquid delivery system with a pressure-based control inlet for introducing said source gas, said source gas comprising a vaporized liquid source, into said chamber.
- 30. The apparatus of claim 29, wherein said pressure-based control inlet has an orifice aperture size ranging between about 25-40 mil, and said source gas comprises titanium tetrachloride vaporized with helium gas.
CROSS REFERENCE TO RELATED APPLICATIONS
This application is a continuation of commonly assigned patent application Ser. No. 08/800,098 entitled "A HIGH TEMPERATURE, HIGH DEPOSITION RATE PROCESS AND APPARATUS FOR DEPOSITING TITANIUM LAYERS" and filed on Feb. 12, 1997, now abandoned, which claims the benefit of commonly assigned provisional patent Application Ser. No. 60/037,659 filed on Jan. 24, 1997. This application is related to commonly assigned patent application No. 08/799,415 entitled "A HIGH TEMPERATURE, HIGH FLOW RATE CHEMICAL VAPOR DEPOSITION APPARATUS AND RELATED METHODS" having Jun Zhao, Lee Luo, Xiao Liang Jin, Jia-Xiang Wang, Talex Sajoto, Stefan Wolff, Leonid Selyutin, and Ashok Sinha listed as co-inventors and filed on Feb. 12, 1997; and to commonly assigned patent application Ser. No. 08/800,096 entitled "A HIGH TEMPERATURE CERAMIC HEATER ASSEMBLY WITH RF CAPABILITY AND RELATED METHODS", having Jun Zhao, Charles Dornfest, Talex Sajoto, Leonid Selyutin, Stefan Wolff, Lee Luo, Harold Mortensen, and Richard Palicka listed as co-inventors and filed on Feb. 12, 1997; and to commonly assigned patent application Ser. No. 08/798,004 entitled "APPARATUS FOR CERAMIC PEDESTAL AND METAL SHAFT ASSEMBLY", having Jun Zhao, Talex Sajoto, Leonid Selyutin, Charles Dornfest, Stefan Wolff, Lee Luo, and Eller Juco listed as co-inventors and filed on Feb. 12, 1997; and to concurrently filed and commonly assigned patent application entitled "METHODS AND APPARATUS FOR A CLEANING PROCESS IN A HIGH TEMPERATURE, CORROSIVE, PLASMA ENVIRONMENT", (AM1870-C2) having Jun Zhao, Lee Luo, Jia-Xiang Wang, Xiao Liang Jin, Stefan Wolff and Talex Sajoto listed as co-inventors; the disclosures of which are hereby incorporated by reference.
US Referenced Citations (6)
Foreign Referenced Citations (1)
Number |
Date |
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0 273 470 A2 |
Nov 1987 |
EPX |
Continuations (1)
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800098 |
Feb 1997 |
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