Full English Translation of Higuchi et al., Japan Kokai Number 58-98968, (13 Jun. 1983) pp. 1-8. |
F. Mohammadi, "Siliceides for Interconnection Technology" Solid State Technology (Jan. 1981) pp. 65-91. |
"High Aspect Ratio Hole Filling with CVD Tungsten for Multi-Level Interconnection", Suguro, et al., extended abstract 18th conf. Solid Devices & Matl., Tokyo pp. 503-506 (1986). |
"Diffusion Barriers in Thin Films", by Nicolet, Thin Solid-Films, 52 (1978), pp. 415-443. |
"TiN and TaN as Diffusion Barriers in Metalizations to Silicon Semiconductors Devices", by Wittmer, Applied Physcis Letters 36(6), 15 Mar. 1980 pp. 456-458. |
"Applications of TiN Thin Films and Silcon Device Technoloby", by Wittmer, et al., Thin Solid Films, 93 (1982) pp. 397-405. |
"Reaction Kinetics of Tungsten Thin Films on Silicon (100) Surfaces", by Locker et al., pp. 4366-4369, Journal of Applied Physics, vol. 44, No. 10, Oct. 1973. |
"Fabrication of Short Channel Mosfets With Refractory Metal Gates Using RF Sputter Etching", by Rodriquez et al., pp. 17-21 Solid-State Electronics, (1976). |
"Control of Resistivity, Microstructure, and Stress in Electron Beam Evaporated Tungsten Films", by Sinha et al., pp. 436-444, Journal of Vacuum Society Technology, vol. 10, No. 3, May/Jun. 1973. |
"Reactively Sputtered ZrN Used as An AL/Si Diffusion Barrier in a Zr Contact To Silicon", by Ostling et al., pp. 281-283, Journal of Vacuum Science Technology, A2(2), Apr.-Jun. 1984. |
"Barrier Layers: Principles and Applications in Microelectronics", by Wittmer, pp. 273-280, Journal of Vacuum Science Technology, A 2 (2), Apr.-Jun. 1984. |
"Characteristics of DC Magnetron, Reactively Sputtered TiN.sub.x Films for Diffusion Barriers in III-V Semiconductor Metallization", by Noel et al., pp. 284-287, Journal of Vacuum Science Technology A 2(2), Apr.-Jun. 1984. |
"TiN Formed by Evaporation as a Diffusion Barrier Between AI and Si", by Ting, pp. 14-18, Journal of Vacuum Science Technology vol. 21, No. 1, May/Jun. 1982. |
"Pressure Dependence of the Electrical Properties of TaN Thin Films" by Shioyama et al., pp. 45-48, Thin Solid Films, 57, 1979. |
"Electrical and Structural Properties of Tantalum Nitride Thin Films Deposited by Sputtering", by Petrovic et al, pp. 333--336, Thin Solid Films, 57, 1979. |
"Reliability of PtSi-Ti/W-A1 Metallization System Used in Bipolar Logics", by Canali et al., IEEE/PROC. IRPS, pp. 230-237, Jun. 1981 Applied Physics Letter, vol. 36, No. 6, Mar. 1980, pp. 456-458, New York, N.Y, article entitled "TiN and TaN as Diffusion Barriers in Metallizations to Silicon Semiconductor Devices", Marc Wittmer. |
Extended abstract, vol. 81-2 (1981) Oct., Pennington, N.J., pp. 864-865, entitled "Termal Stability of Titanium and Hafnium Nitride Thin Films In Contact with Metallic Overlayers Investigated by Backscattering", Suni et al. |
Journal of Applied Physcis, vol. 53, No. 2, Feb 1982, pp. 1007-1012, New York, N.Y., article entitled "Interfacial Reactions Between Aluminum and Transition-metal Nitride and Carbine", Films, Marc Wittmer. |
Journal of Applied Physics, vol. 52, No. 6, Jun. 1981, pp. 4297-4299, New York, N.Y., article entitled "Thermal Stability of Titanium Nitride and Shallow Junction Solar Cell Contracts", N. W. Cheung et al. |
Thin Solid Films, vol. 119, No. 1, Sep. 1983, pp. 23-30, Lausanne, Swit., article entitled "Resistivity, Oxidation Kinetics and Diffusion Barrier Properties of Thin Film ZrB.sub.2 ", Snappirio et al. |
Thin Solid Films, vol. 96, No. 4, Oct. 1982, pp. 317-326 Lausanne, Swit., article entitled "General Aspects of Barrier Layers for Very-Large-Scale Integration Applications II: Practice", Nowicki et al. |