Claims
- 1. A semiconductor processing chamber, comprising:
a top electrode in communication with a power supply; and a processing chamber defined within a base, a sidewall extending from the base, and a top disposed on the sidewall, the processing chamber having an outlet enabling removal of fluids within the processing chamber, the processing chamber including,
a substrate support; and an inner surface of the processing chamber defined by the base, the sidewall and the top, the inner surface is coated with a fluorine containing polymer coating, the fluorine containing polymer coating configured to release fluorine upon creation of an oxygen plasma in the processing chamber to remove a residue deposited on the fluorine containing polymer coating, the residue deposited from a processing operation performed in the processing chamber.
- 2. The semiconductor processing chamber of claim 1, wherein the fluorine containing polymer coating includes a carbon component and a fluorine component.
- 3. The semiconductor processing chamber of claim 1, wherein the fluorine containing polymer coating is distributed over the inner surface by creating a perfluorocarbon plasma within the semiconductor processing chamber.
- 4. The semiconductor processing chamber of claim 1, wherein the fluorine containing polymer coating has a thickness of less than 500 angstroms (Å).
- 5. The semiconductor processing chamber of claim 1, wherein the fluorine containing polymer coating has a thickness of less than 50 angstroms (Å).
- 6. The semiconductor processing chamber of claim 1, wherein the base, the sidewall and the top are formed from the group consisting of aluminum, ceramic, aluminum coated with ceramic, and aluminum coated with silicon carbide.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional application of U.S. patent application Ser. No. 10/186,917, filed Jun. 28, 2002, and entitled “IN-SITU CLEANING OF A POLYMER COATED PLASMA PROCESSING CHAMBER.” The disclosure of this related application is incorporated herein by reference for all purposes.
Divisions (1)
|
Number |
Date |
Country |
Parent |
10186917 |
Jun 2002 |
US |
Child |
10881112 |
Jun 2004 |
US |