Claims
- 1. A method of formation of a capacitor of the type of a bottom diffusion barrier, a bottom electrode, a ferroelectric, a top electrode, and a top diffusion barrier, the improvement consisting of:etching a stack of diffusion barrier, electrode, ferroelectric, electrode, diffusion barrier materials with a plasma-activated etchant and using optical emission spectroscopy at two or more wavelengths to detect material boundaries and switch etchant composition.
- 2. A method of formation of a capacitor of the type of a bottom diffusion barrier, a bottom electrode, a ferroelectric, a top electrode, and a top diffusion barrier plus a sidewall diffusion barrier, the improvement consisting of:depositing a conformal layer of diffusion barrier material over a capacitor stack of diffusion barrier, electrode, ferroelectric, electrode, diffusion barrier materials, and anisotropically removing the portions of said diffusion barrier material away from the sidewall of said capacitor stack.
- 3. The method of claim 2 wherein the layer of diffusion barrier material includes a sublayer of silicon nitride over a sublayer of metal oxide.
- 4. A method of capacitor formation of the type of forming a bottom electrode, depositing dielectric, and depositing a top electrode, the improvement consisting of:surface oxidizing the bottom electrode after formation and prior to dielectric deposition.
RELATED APPLICATIONS
This application claims priority from the following provisional patent applications:
application Ser. No. 60/099,571 filed Sep. 9, 1998 (TI-26586)
application Ser. No. 60/099,848 filed Sep. 11, 1998 (TI-27124)
application Ser. No. 60/114,228 filed Dec. 30, 1998 (TI-28057)
application Ser. No. 60/123,687 filed Mar. 10, 1999 (TI-28589)
Also, application Ser. No. 09/238,211 filed Jan. 27, 1999 and application Ser. No. 09/105,738 filed Jun. 26, 1998 are co-pending applications that disclose related subject matter.
US Referenced Citations (5)
Provisional Applications (4)
|
Number |
Date |
Country |
|
60/123687 |
Mar 1999 |
US |
|
60/114228 |
Dec 1998 |
US |
|
60/099848 |
Sep 1998 |
US |
|
60/099571 |
Sep 1998 |
US |